S. M. Donovan

661 total citations
38 papers, 551 citations indexed

About

S. M. Donovan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, S. M. Donovan has authored 38 papers receiving a total of 551 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Condensed Matter Physics, 32 papers in Electrical and Electronic Engineering and 19 papers in Mechanics of Materials. Recurrent topics in S. M. Donovan's work include GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (26 papers) and Metal and Thin Film Mechanics (19 papers). S. M. Donovan is often cited by papers focused on GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (26 papers) and Metal and Thin Film Mechanics (19 papers). S. M. Donovan collaborates with scholars based in United States, Germany and Israel. S. M. Donovan's co-authors include S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, Jung Han, F. Ren, C. G. Willison, C. B. Vartuli, R. G. Wilson and Hyun Cho and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Journal of Crystal Growth.

In The Last Decade

S. M. Donovan

37 papers receiving 542 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. M. Donovan United States 13 453 367 174 158 137 38 551
Hiroki Imabayashi Japan 11 386 0.9× 137 0.4× 233 1.3× 264 1.7× 65 0.5× 30 455
A. P. Zhang United States 11 620 1.4× 484 1.3× 254 1.5× 155 1.0× 88 0.6× 12 674
W. H. Rowland United States 10 447 1.0× 319 0.9× 379 2.2× 489 3.1× 97 0.7× 13 719
M. W. Leksono United States 9 407 0.9× 265 0.7× 186 1.1× 200 1.3× 73 0.5× 16 492
A. J. Ptak United States 12 391 0.9× 238 0.6× 179 1.0× 188 1.2× 106 0.8× 17 472
Yuma Todoroki Japan 10 327 0.7× 105 0.3× 196 1.1× 205 1.3× 59 0.4× 17 359
Hiroaki Hayashi Japan 8 537 1.2× 192 0.5× 268 1.5× 229 1.4× 97 0.7× 18 608
Christoph Hums Germany 9 429 0.9× 152 0.4× 185 1.1× 164 1.0× 166 1.2× 15 486
Gye Mo Yang South Korea 17 539 1.2× 491 1.3× 227 1.3× 261 1.7× 129 0.9× 48 887
Nakao Akutsu Japan 12 471 1.0× 267 0.7× 256 1.5× 179 1.1× 76 0.6× 27 532

Countries citing papers authored by S. M. Donovan

Since Specialization
Citations

This map shows the geographic impact of S. M. Donovan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. M. Donovan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. M. Donovan more than expected).

Fields of papers citing papers by S. M. Donovan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. M. Donovan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. M. Donovan. The network helps show where S. M. Donovan may publish in the future.

Co-authorship network of co-authors of S. M. Donovan

This figure shows the co-authorship network connecting the top 25 collaborators of S. M. Donovan. A scholar is included among the top collaborators of S. M. Donovan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. M. Donovan. S. M. Donovan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Donovan, S. M., F. Ren, M. E. Overberg, et al.. (2000). Surface Chemical Treatment for the Cleaning of AlN and GaN Surfaces. Journal of The Electrochemical Society. 147(8). 3087–3087. 51 indexed citations
2.
Ren, F., J. R. LaRoche, F. Ren, et al.. (1999). MBE Growth of Oxides for III–N MOSFETs. MRS Proceedings. 573. 5 indexed citations
3.
Cao, X. A., S. J. Pearton, S. M. Donovan, et al.. (1999). Thermal stability of WSix and W ohmic contacts on GaN. Materials Science and Engineering B. 59(1-3). 362–365. 5 indexed citations
4.
Hahn, Yoon‐Bong, David C. Hays, H. Cho, et al.. (1999). Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN. Materials Science and Engineering B. 60(2). 95–100. 11 indexed citations
5.
Cho, Hyun, Tomoki Maeda, S. M. Donovan, et al.. (1999). Novel plasma chemistries for highly selective dry etching of InxGaN1−x: BI3 and BBr3. Materials Science and Engineering B. 59(1-3). 340–344. 2 indexed citations
6.
Hahn, Yoon‐Bong, David C. Hays, S. M. Donovan, et al.. (1999). Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(3). 768–773. 31 indexed citations
7.
Cho, Hyun, Jung Han, R. J. Shul, et al.. (1999). UV-photoassisted etching of GaN in KOH. Journal of Electronic Materials. 28(3). 290–294. 15 indexed citations
8.
Hahn, Yoon‐Bong, David C. Hays, C. R. Abernathy, et al.. (1999). III-nitride dry etching: Comparison of inductively coupled plasma chemistries. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 2202–2208. 11 indexed citations
9.
Shul, R. J., C. G. Willison, Jung Han, et al.. (1998). High-density plasma etch selectivity for the III–V nitrides. Solid-State Electronics. 42(12). 2269–2276. 35 indexed citations
10.
Cho, Hyun, J. K. Hong, Tomoki Maeda, et al.. (1998). High selectivity plasma etching of InN over GaN. Journal of Electronic Materials. 27(7). 915–917. 8 indexed citations
11.
Cho, Hyun, J. K. Hong, Tomoki Maeda, et al.. (1998). New plasma chemistries for etching GaN and InN: BI3 and BBr3. MRS Internet Journal of Nitride Semiconductor Research. 3. 16 indexed citations
12.
Cho, Hyun, C. B. Vartuli, C. R. Abernathy, et al.. (1998). Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas. Solid-State Electronics. 42(12). 2277–2281. 21 indexed citations
13.
Cho, Hyun, C. B. Vartuli, S. M. Donovan, et al.. (1998). Comparison of inductively coupled plasma Cl2 and Cl4/H2 etching of III-nitrides. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(3). 1631–1635. 28 indexed citations
14.
MacKenzie, J. D., et al.. (1997). Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials. Semiconductor Science and Technology. 12(10). 1310–1318. 20 indexed citations
15.
Hong, J. K., C. B. Vartuli, J. D. MacKenzie, et al.. (1997). High temperature annealing of GaN, InN, AlN and related alloys. Solid-State Electronics. 41(5). 681–694. 9 indexed citations
16.
Ren, F., J. R. Lothian, J. D. MacKenzie, et al.. (1997). Plasma Damage Effects in InAlN Field Effect Transistors. MRS Proceedings. 468. 2 indexed citations
17.
MacKenzie, J. D., et al.. (1997). Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy. Journal of Electronic Materials. 26(11). 1266–1269. 5 indexed citations
18.
Ren, F., C. B. Vartuli, S. J. Pearton, et al.. (1997). Comparison of ohmic metallization schemes for InGaAlN. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 802–806. 10 indexed citations
19.
Pearton, S. J., J. W. Lee, J. D. MacKenzie, et al.. (1996). Dry Etch Damage In InN, InGaN and InAIN. MRS Proceedings. 423. 1 indexed citations
20.
Ren, F., J. R. Lothian, J. D. MacKenzie, et al.. (1996). Effect of BCl3 Dry Etching on InAlN Surface Properties. Journal of The Electrochemical Society. 143(9). L217–L219. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Hiroki Imabayashi Breakdown of academic impact, for papers by A. P. Zhang Breakdown of academic impact, for papers by W. H. Rowland Breakdown of academic impact, for papers by M. W. Leksono Breakdown of academic impact, for papers by A. J. Ptak Breakdown of academic impact, for papers by Yuma Todoroki Breakdown of academic impact, for papers by Hiroaki Hayashi Breakdown of academic impact, for papers by Christoph Hums Breakdown of academic impact, for papers by Gye Mo Yang Breakdown of academic impact, for papers by Nakao Akutsu
Rankless by CCL
2026