S. M. Donovan
Impact in
- Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
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- Ga2O3 and related materials
Papers in
-
- GaN-based semiconductor devices and materials 37
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- Semiconductor materials and devices 26
- Plasma Diagnostics and Applications 10
- Silicon Carbide Semiconductor Technologies 2
- Co-authors
- S. J. Pearton (34 shared papers)C. R. Abernathy (29 shared papers)J. D. MacKenzie (21 shared papers)R. J. Shul (23 shared papers)Jung Han (12 shared papers)F. Ren (16 shared papers)C. G. Willison (5 shared papers)R. G. Wilson (5 shared papers)
- Journals
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (6 papers)Solid-State Electronics (6 papers)Journal of Electronic Materials (4 papers)Materials Science and Engineering B (3 papers)MRS Internet Journal of Nitride Semiconductor Research (3 papers)
- Partner nations
- United StatesGermanyIsrael
In The Last Decade
S. M. Donovan
37 papers receiving 540 citations
Peers
Comparison fields: 5 of 27
- Condensed Matter Physics 449
- Electronic, Optical and Magnetic Materials 172
- Electrical and Electronic Engineering 363
- Mechanics of Materials 136
- Materials Chemistry 159
Countries citing papers authored by S. M. Donovan
This map shows the geographic impact of S. M. Donovan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. M. Donovan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. M. Donovan more than expected).
Fields of papers citing papers by S. M. Donovan
This network shows the impact of papers produced by S. M. Donovan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. M. Donovan. The network helps show where S. M. Donovan may publish in the future.
Co-authors
The 25 scholars most cited alongside S. M. Donovan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 1999 | 71 | |
| 2 | 1998 | 52 | |
| 3 | 2000 | 51 | |
| 4 | 1998 | 36 | |
| 5 | 1999 | 31 | |
| 6 | 1998 | 26 | |
| 7 | 2000 | 25 | |
| 8 | 1998 | 21 | |
| 9 | 1997 | 20 | |
| 10 | 1997 | 19 | |
| 11 | 1998 | 16 | |
| 12 | 1997 | 16 | |
| 13 | 1999 | 15 | |
| 14 | 1998 | 12 | |
| 15 | 1997 | 12 | |
| 16 | 1998 | 12 | |
| 17 | 1999 | 11 | |
| 18 | 1996 | 11 | |
| 19 | 1999 | 11 | |
| 20 | 1997 | 10 |
About S. M. Donovan
S. M. Donovan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 38 papers that have together received 549 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (26 papers), Metal and Thin Film Mechanics (19 papers), Plasma Diagnostics and Applications (10 papers), Ga2O3 and related materials (7 papers), ZnO doping and properties (4 papers), Silicon Carbide Semiconductor Technologies (2 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Condensed Matter Physics (449 citations), Electronic, Optical and Magnetic Materials (172 citations), Electrical and Electronic Engineering (363 citations), Mechanics of Materials (136 citations) and Materials Chemistry (159 citations). S. M. Donovan has collaborated with scholars based in United States, Germany and Israel. Frequent co-authors include S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, Jung Han, F. Ren, C. G. Willison, R. G. Wilson, Hyun Cho and C. B. Vartuli. Their work appears in journals such as Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Solid-State Electronics, Journal of Electronic Materials, Materials Science and Engineering B and MRS Internet Journal of Nitride Semiconductor Research.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.