R. Hickman

793 total citations
20 papers, 675 citations indexed

About

R. Hickman is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Hickman has authored 20 papers receiving a total of 675 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Condensed Matter Physics, 15 papers in Electrical and Electronic Engineering and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Hickman's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (9 papers). R. Hickman is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (9 papers). R. Hickman collaborates with scholars based in United States. R. Hickman's co-authors include J. M. Van Hove, F. Ren, S. J. Pearton, R. J. Shul, P. P. Chow, G. Dang, X. A. Cao, Jody J. Klaassen, P. P. Ruden and L. Zhang and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Solid-State Electronics.

In The Last Decade

R. Hickman

20 papers receiving 664 citations

Peers

R. Hickman

CMP

EEE

EOMM

AMPO

Nobuhiko Sawaki Nobuhiko Sawaki Japan

Muneyoshi Suita Japan

K.P. Lee United States

Kensaku Motoki Japan

A. Usui Japan

K. M. Tracy United States

A. S. Zubrilov Russia

A. P. Zhang United States

Cory Lund United States

K. Y. Lim South Korea

Nobuhiko Sawaki Nobuhiko Sawaki Japan

R. Hickman

537 ×0.9

CMP

285 ×0.7

EEE

279 ×0.9

EOMM

307 ×1.5

194 ×1.3

AMPO

Citations per year, relative to R. Hickman R. Hickman (= 1×) peers Nobuhiko Sawaki Nobuhiko Sawaki

Countries citing papers authored by R. Hickman

Since Specialization

Citations

This map shows the geographic impact of R. Hickman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Hickman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Hickman more than expected).

Fields of papers citing papers by R. Hickman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Hickman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Hickman. The network helps show where R. Hickman may publish in the future.

Co-authorship network of co-authors of R. Hickman

This figure shows the co-authorship network connecting the top 25 collaborators of R. Hickman. A scholar is included among the top collaborators of R. Hickman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Hickman. R. Hickman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hickman, R., et al.. (2014). Wrap around field plate technique for GaN Schottky barrier diodes. MRS Proceedings. 1736. 1 indexed citations

McIntyre, Michael L., et al.. (2014). 13.8 kV five level ANPC inverter for wind power. 4606–4611. 1 indexed citations

Cao, X. A., C. R. Abernathy, S. J. Pearton, et al.. (2000). Effect of thermal stability of GaN epi-layer on the Schottky diodes. Solid-State Electronics. 44(7). 1203–1208. 9 indexed citations

Cao, X. A., S. J. Pearton, G. Dang, et al.. (2000). Surface Conversion Effects in Plasma-Damaged p-GaN. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 558–569. 3 indexed citations

Ren, F., Jung Han, R. Hickman, et al.. (2000). GaN/AlGaN HBT fabrication. Solid-State Electronics. 44(2). 239–244. 25 indexed citations

Zhang, A. P., G. Dang, F. Ren, et al.. (2000). Plasma damage in p-GaN. Journal of Electronic Materials. 29(3). 256–261. 30 indexed citations

Dang, G., F. Ren, X. A. Cao, et al.. (2000). Cl[sub 2]/Ar High-Density-Plasma Damage in GaN Schottky Diodes. Journal of The Electrochemical Society. 147(2). 719–719. 13 indexed citations

Hickman, R., J. M. Van Hove, P. P. Chow, et al.. (2000). GaN PN junction issues and developments. Solid-State Electronics. 44(2). 377–381. 23 indexed citations

Cao, X. A., G. Dang, H. Cho, et al.. (1999). Inductively coupled plasma damage in GaN Schottky diodes. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(4). 1540–1544. 13 indexed citations

10.

Cao, X. A., S. J. Pearton, G. Dang, et al.. (1999). Surface Conversion Effects in Plasma-Damaged p-GaN. MRS Proceedings. 595. 2 indexed citations

11.

Cao, X. A., S. J. Pearton, G. Dang, et al.. (1999). Depth and thermal stability of dry etch damage in GaN Schottky diodes. Applied Physics Letters. 75(2). 232–234. 131 indexed citations

12.

Fung, A., M. I. Nathan, J. M. Van Hove, et al.. (1999). A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts. Journal of Electronic Materials. 28(5). 572–579. 10 indexed citations

13.

Cao, X. A., S. J. Pearton, A. P. Zhang, et al.. (1999). Electrical effects of plasma damage in p-GaN. Applied Physics Letters. 75(17). 2569–2571. 184 indexed citations

14.

Hove, J. M. Van, P. P. Chow, A. M. Wowchak, et al.. (1998). Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1286–1288. 11 indexed citations

15.

Ren, F., C. R. Abernathy, J. M. Van Hove, et al.. (1998). 300°C GaN/AlGaN Heterojunction Bipolar Transistor. MRS Internet Journal of Nitride Semiconductor Research. 3. 54 indexed citations

16.

Hickman, R., J. M. Van Hove, P. P. Chow, et al.. (1998). Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy. Solid-State Electronics. 42(12). 2183–2185. 4 indexed citations

17.

Hove, J. M. Van, R. Hickman, Jody J. Klaassen, P. P. Chow, & P. P. Ruden. (1997). Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy. Applied Physics Letters. 70(17). 2282–2284. 143 indexed citations

18.

Hove, J. M. Van, P. P. Chow, Jody J. Klaassen, et al.. (1997). Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence. MRS Proceedings. 468. 8 indexed citations

19.

Hove, J. M. Van, P. P. Chow, R. Hickman, et al.. (1997). High Temperature GaN and AlGaN Photovoltaic Detectors for UV Sensing Applications. MRS Proceedings. 482. 1 indexed citations

20.

Hove, J. M. Van, P. P. Chow, R. Hickman, et al.. (1996). Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE. MRS Proceedings. 449. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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