L. Zhang

849 citations

28 papers · 698 indexed · h-index 11

Co-authors: R. J. Shul S. J. Pearton F. Ren G. Dang A. P. Zhang X. A. Cao Jung Han J. M. Van Hove
Topics: GaN-based semiconductor devices and materials (25 papers)Semiconductor materials and devices (17 papers)Ga2O3 and related materials (12 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Scientific Reports IEEE Transactions on Electron Devices
Partner nations: China United States

In The Last Decade

L. Zhang

26 papers receiving 672 citations

Peers

Countries citing papers authored by L. Zhang

Since Specialization

Citations

This map shows the geographic impact of L. Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Zhang more than expected).

Fields of papers citing papers by L. Zhang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Zhang. The network helps show where L. Zhang may publish in the future.

Co-authorship network of co-authors of L. Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of L. Zhang. A scholar is included among the top collaborators of L. Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Zhang. L. Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Investigation of aluminum agglomeration characteristics in solid propellants with Al/Mg particle additives 2025 ·Scientific Reports ·L. Zhang,J. C. Zeng,Xiangdong Li,Juntao Chang,Lianbo Li,Weixuan Li	0
2	A Preliminary Research on Combustion Characteristics of a Novel-Type Scramjet Combustor 2022 ·International Journal of Aerospace Engineering ·L. Zhang,Juntao Chang,(unknown),(unknown),Yingkun Li	6
3	Composition of solid and gaseous primary combustion products of boron-based fuel-rich propellant 2021 ·Acta Astronautica ·Peihui Xu,Jianzhong Liu,L. Zhang,Jifei Yuan,(unknown),Hui Liu	22
4	AlGaN/GaN HEMT with LPCVD deposited SiN and PECVD deposited SiCOH low-k passivation 2019 ·Applied Physics Express ·L. Zhang,Pengfei Wang	8
5	Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT 2017 ·IEEE Journal of the Electron Devices Society ·(unknown),L. Zhang,(unknown),(unknown),Zhiyuan Ye,Pengfei Wang	4
6	Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing 2017 ·IEEE Transactions on Electron Devices ·L. Zhang,Zhuo Liu,(unknown),(unknown),Pengfei Wang	6
7	Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors 2016 ·Nanoscale Research Letters ·(unknown),Xiaoyong Liu,L. Zhang,(unknown),(unknown),Pengfei Wang	15
8	AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique 2015 ·Nanoscale Research Letters ·Xiaoyong Liu,(unknown),L. Zhang,(unknown),(unknown),Chunmin Zhang,Hong-Liang Lü,Pengfei Wang,David Wei Zhang	30
9	Two-dimensional device simulation for radio frequency performance of AlGaN/GaN HEMT 2015 ·L. Zhang,(unknown),Xiaoyong Liu,(unknown),Zhuo Liu,(unknown),Pengfei Wang	1
10	Impact of geometric dimensions on the behavior of GaN MIS-HEMT fabricated on patterned sapphire substrate 2014 ·(unknown),Xiaoyong Liu,L. Zhang,(unknown),(unknown),(unknown),(unknown),Haoxiang Zhang,David Wei Zhang,Pengfei Wang	2
11	Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs 2000 ·MRS Proceedings ·R. J. Shul,L. Zhang,Albert G. Baca,C. G. Willison,Jung Han,S. J. Pearton,(unknown),F. Ren	3
12	Schottky diode measurements of dry etch damage in n- and p-type GaN 2000 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·X. A. Cao,A. P. Zhang,G. Dang,F. Ren,S. J. Pearton,R. J. Shul,L. Zhang	41
13	Design and Performance of Nitride-based UV LEDs 2000 ·MRS Proceedings ·Mary H. Crawford,Jung Han,R. J. Shul,Michael A. Banas,Jeffrey J. Figiel,L. Zhang	2
14	Epitaxially-grown GaN junction field effect transistors 2000 ·IEEE Transactions on Electron Devices ·L. Zhang,L. F. Lester,Albert G. Baca,R. J. Shul,(unknown),C. G. Willison,Umesh K. Mishra,Steven P. DenBaars,J.C. Zolper	31
15	Surface Conversion Effects in Plasma-Damaged p-GaN 2000 ·MRS Internet Journal of Nitride Semiconductor Research ·X. A. Cao,S. J. Pearton,G. Dang,A.P. Zhang,F. Ren,R. J. Shul,L. Zhang,R. Hickman,J. M. Van Hove	3
16	Plasma damage in p-GaN 2000 ·Journal of Electronic Materials ·(unknown),A. P. Zhang,G. Dang,F. Ren,S. J. Pearton,J. M. Van Hove,R. Hickman,R. J. Shul,L. Zhang	30
17	Inductively coupled plasma damage in GaN Schottky diodes 1999 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·X. A. Cao,(unknown),G. Dang,H. Cho,F. Ren,S. J. Pearton,R. J. Shul,L. Zhang,R. Hickman,J. M. Van Hove	13
18	Surface Conversion Effects in Plasma-Damaged p-GaN 1999 ·MRS Proceedings ·X. A. Cao,S. J. Pearton,G. Dang,A.P. Zhang,F. Ren,R. J. Shul,L. Zhang,R. Hickman,J. M. Van Hove	2
19	AlGaN/GaN quantum well ultraviolet light emitting diodes 1998 ·Applied Physics Letters ·Jung Han,Mary H. Crawford,R. J. Shul,Jeffrey J. Figiel,Michael A. Banas,L. Zhang,Yoon‐Kyu Song,Hao Zhou,A. V. Nurmikko	191
20	GaN Etching in BCl₃/Cl₂ Plasmas 1998 ·MRS Proceedings ·R. J. Shul,Carol I. H. Ashby,C. G. Willison,L. Zhang,Jung Han,(unknown),S. J. Pearton,(unknown),L. F. Lester	10

About L. Zhang

L. Zhang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 28 papers that have together received 698 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (25 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (12 papers). The work is most often cited by research in Condensed Matter Physics (601 citations), Electronic, Optical and Magnetic Materials (304 citations) and Electrical and Electronic Engineering (391 citations). L. Zhang has collaborated with scholars based in China and United States. Frequent co-authors include R. J. Shul, S. J. Pearton, F. Ren, G. Dang, A. P. Zhang, X. A. Cao, Jung Han, J. M. Van Hove, R. Hickman and Mary H. Crawford. Their work appears in journals such as Applied Physics Letters, Scientific Reports and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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