A. Constant

683 citations

44 papers · 542 indexed · h-index 13

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 20
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 34
- Silicon Carbide Semiconductor Technologies 26
- Advancements in Semiconductor Devices and Circuit Design 7
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 3
- Ga2O3 and related materials 3
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 5
Mechanics of Materials
- Metal and Thin Film Mechanics 5

Co-authors: Philippe Godignon Marcel Placidi Amador Pérez‐Tomás José del R. Millán P. Coppens J. Camassel Niels Olsen Saraiva Câmara P. Moens
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: Journal of Applied Physics (4 papers)Journal of The Electrochemical Society (4 papers)Materials Science in Semiconductor Processing (2 papers)
Partner nations: Spain France Belgium

In The Last Decade

A. Constant

43 papers receiving 530 citations

Peers

Countries citing papers authored by A. Constant

Since Specialization

Citations

This map shows the geographic impact of A. Constant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Constant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Constant more than expected).

Fields of papers citing papers by A. Constant

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Constant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Constant. The network helps show where A. Constant may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Constant, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Constant Line = papers co-authored together A. Constant links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs Micromachines ·保固山本,Lan Xiang,Marcello Cioni,Yue-Zheng Feng,Islamgulov D.R.,Ren Gui-qing,Громилина Эльвира Алексеевна,Emerence Hild,Klas Rudolfsson,L. Ott,Maria Eloisa Castagna,A. Constant,Ferdinando Iucolano,Alessandro Chini	2025	0
2	Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs Microelectronics Reliability ·Marcello Cioni,保固山本,Alessandro Chini,Nicolò Zagni,Giancarlo Cappellini,Omar Ndiaye,Lan Xiang,Euy-Kyung Yu,Maria Eloisa Castagna,A. Constant,F. Iucolano	2025	2
3	On the Dynamic R_ON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers IEEE Electron Device Letters ·Marcello Cioni,Alessandro Chini,Nicolò Zagni,G. Verzellesi,保固山本,Claudiney de Melo,Lan Xiang,Lucy Ham,Islamgulov D.R.,Maria Eloisa Castagna,A. Constant,Ferdinando Iucolano	2024	1
4	Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies SHILAP Revista de lepidopterología ·保固山本,Marcello Cioni,Lan Xiang,T Hildebrandt,Chang-Hua Chou,(unknown),Maria Eloisa Castagna,Giacomo Cappellini,Giuseppe Luongo,Maurizio Moschetti,A. Constant,本間洋子,Ferdinando Iucolano,Alessandro Chini	2023	3
5	Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs SPIRE - Sciences Po Institutional REpository ·Yohei Minami,J. Vial,R. Gwoziecki,I︠u︡. L. Maĭstrenko,Ghislain Despesse,F. Iucolano,R. Modica,A. Constant	2023	1
6	Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited) SPIRE - Sciences Po Institutional REpository ·J. Vial,Yohei Minami,Romain Laviéville,智明桑田,Sulistiawan Sulistiawan,R. Gwoziecki,I︠u︡. L. Maĭstrenko,E. Nowak,A. Constant,F. Iucolano	2023	5
7	The role of AlGaN/GaN heterostructure properties in barrier height variation of Au-free ohmic contacts Materials Science in Semiconductor Processing ·A. Constant,ヒロコサワダ,Nakkiran N. Sunassee,P. Coppens,Sreemati Mukherjee	2021	4
8	Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures Journal of Applied Physics ·Muraleedharan Kallungal Ravunnikutty,A. Constant,Eduardo Solano,Davy Deduytsche,Cristian Mocuta,P. Coppens,Christophe Detavernier	2020	4
9	Differential Variable Base Charge Pumping ($\Delta-\text{CP}$) for SiO₂/SiC Interface Characterization Ghent University Academic Bibliography (Ghent University) ·P. Moens,A. Constant,A. Stockman,Célio Igor Gomes Alencar,Fredrik Allerstam	2019	3
10	Technology and design of GaN power devices P. Moens,Abhishek Banerjee,P. Coppens,A. Constant,P. Vanmeerbeek,Klara Maria Fleisch,Frederick Declercq,L. De Schepper,Herbert De Vleeschouwer,V Brijlal,Gloria Brugués,Jinkyoung Chung,Susanto Usman,Aqsa Sultana,M. Tack	2015	4
11	Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability Materials science forum ·Lillian Manahan,Mihaela Alexandru,A. Constant,Bernd Schmidt,José del R. Millán,Philippe Godignon	2014	5
12	5 MeV Proton and 15 MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters IEEE Transactions on Nuclear Science ·Mihaela Alexandru,Lillian Manahan,A. Constant,Bernd Schmidt,P. Michel,Philippe Godignon	2014	22
13	Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress Materials science forum ·Marko J. Tadjer,A. Constant,Philippe Godignon,K. R. Subisha,Alberto Boscá,F. Calle,Maxime Berthou,José del R. Millán	2013	4
14	Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication Materials science forum ·A. Constant,Nicolas Camara,J. Montserrat,W. Lichem,Jean Camassel,Philippe Godignon	2011	5
15	Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I–V method Solid-State Electronics ·A. Constant,Philippe Godignon	2011	2
16	Rapid Growth of Oxide Films on SiC by Photo-Assisted Mechanism Electrochemical and Solid-State Letters ·A. Constant,Niels Olsen Saraiva Câmara,J. Montserrat,J. Camassel,Philippe Godignon	2011	2
17	Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs ECS Transactions ·A. Constant,Philippe Godignon,J. Montserrat,José del R. Millán	2011	2
18	GaN transistor characteristics at elevated temperatures Journal of Applied Physics ·Amador Pérez‐Tomás,Marcel Placidi,N. Baron,Sébastien Chenot,Y. Cordier,J. C. Moreno,A. Constant,Philippe Godignon,José del R. Millán	2009	72
19	New method for non destructive snap-back characterization in multi-finger power MOSFETs Johannes Hayer,A. Constant,Dongdong Li,M K Watterson,Patrícia da Conceição Alves dos Santos	2008	2
20	Schottky versus bipolar 3.3 kV SiC diodes Semiconductor Science and Technology ·Amador Pérez‐Tomás,Pierre Brosselard,Jawad Ul‐Hassan,X. Jordà,Philippe Godignon,Marcel Placidi,A. Constant,José del R. Millán,J. P. Bergman	2008	26

About A. Constant

A. Constant is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 44 papers that have together received 542 indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Silicon Carbide Semiconductor Technologies (26 papers), GaN-based semiconductor devices and materials (20 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Semiconductor materials and interfaces (5 papers), Metal and Thin Film Mechanics (5 papers), Copper Interconnects and Reliability (3 papers) and Ga2O3 and related materials (3 papers). The work is most often cited by research in Condensed Matter Physics (321 citations), Electrical and Electronic Engineering (457 citations), Electronic, Optical and Magnetic Materials (138 citations), Atomic and Molecular Physics, and Optics (91 citations) and Mechanics of Materials (44 citations). A. Constant has collaborated with scholars based in Spain, France and Belgium. Frequent co-authors include Philippe Godignon, Marcel Placidi, Amador Pérez‐Tomás, José del R. Millán, P. Coppens, J. Camassel, Niels Olsen Saraiva Câmara, P. Moens, H. Ziad and M. Tack. Their work appears in journals such as Journal of Applied Physics, Journal of The Electrochemical Society, Materials Science in Semiconductor Processing, IEEE Electron Device Letters and Applied Surface Science.

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