Maxime Berthou

521 total citations
32 papers, 412 citations indexed

About

Maxime Berthou is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Maxime Berthou has authored 32 papers receiving a total of 412 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Maxime Berthou's work include Silicon Carbide Semiconductor Technologies (30 papers), Semiconductor materials and interfaces (11 papers) and Semiconductor materials and devices (10 papers). Maxime Berthou is often cited by papers focused on Silicon Carbide Semiconductor Technologies (30 papers), Semiconductor materials and interfaces (11 papers) and Semiconductor materials and devices (10 papers). Maxime Berthou collaborates with scholars based in Spain, France and Switzerland. Maxime Berthou's co-authors include Philippe Godignon, José del R. Millán, Pierre Brosselard, Andrei Mihăilă, X. Perpiñà, Charles Joubert, P. Hazdra, J. Montserrat, J. Vobecký and H. Frémont and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Industrial Electronics and IEEE Transactions on Power Electronics.

In The Last Decade

Maxime Berthou

32 papers receiving 394 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Maxime Berthou Spain 10 398 73 45 25 19 32 412
Jeremy Junghans United States 10 441 1.1× 77 1.1× 93 2.1× 39 1.6× 14 0.7× 21 487
Chengzhan Li China 12 399 1.0× 60 0.8× 78 1.7× 38 1.5× 72 3.8× 71 490
Mingmin Huang China 10 273 0.7× 60 0.8× 60 1.3× 48 1.9× 28 1.5× 50 362
R. Sittig Germany 12 390 1.0× 114 1.6× 72 1.6× 63 2.5× 16 0.8× 37 443
J. Neil Merrett United States 10 245 0.6× 52 0.7× 20 0.4× 79 3.2× 48 2.5× 29 312
H. A. C. Tilmans Belgium 8 237 0.6× 107 1.5× 19 0.4× 47 1.9× 16 0.8× 25 292
V. Banu Spain 12 509 1.3× 110 1.5× 93 2.1× 41 1.6× 41 2.2× 55 536
Alexander Bolotnikov United States 14 442 1.1× 64 0.9× 16 0.4× 27 1.1× 40 2.1× 36 471
Sarah K. Haney United States 11 655 1.6× 99 1.4× 13 0.3× 22 0.9× 66 3.5× 19 666

Countries citing papers authored by Maxime Berthou

Since Specialization
Citations

This map shows the geographic impact of Maxime Berthou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maxime Berthou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maxime Berthou more than expected).

Fields of papers citing papers by Maxime Berthou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maxime Berthou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maxime Berthou. The network helps show where Maxime Berthou may publish in the future.

Co-authorship network of co-authors of Maxime Berthou

This figure shows the co-authorship network connecting the top 25 collaborators of Maxime Berthou. A scholar is included among the top collaborators of Maxime Berthou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maxime Berthou. Maxime Berthou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Soler, Victor, Maxime Berthou, Andrei Mihăilă, et al.. (2017). Planar edge terminations for high voltage 4H-SiC power MOSFETs. Semiconductor Science and Technology. 32(3). 35007–35007. 7 indexed citations
2.
Banu, V., Maxime Berthou, J. Montserrat, X. Jordà, & Philippe Godignon. (2017). Impact of layout on the surge current robustness of 1.2 KV SiC diodes. 5 indexed citations
3.
Soler, Victor, Maxime Berthou, J. Montserrat, et al.. (2017). High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. IEEE Transactions on Industrial Electronics. 64(11). 8962–8970. 22 indexed citations
4.
Berthou, Maxime, et al.. (2016). Repetitive Short-Circuit Tests on SiC VMOS Devices. Materials science forum. 858. 812–816. 5 indexed citations
5.
Berthou, Maxime, et al.. (2016). Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range. Materials science forum. 858. 741–744. 3 indexed citations
6.
Banu, V., Maxime Berthou, J. Montserrat, et al.. (2016). Studies on Floating Contact Press-Pack Diodes Surge Current Capability. Materials science forum. 858. 1053–1056. 1 indexed citations
7.
Soler, Victor, J. Montserrat, J. Rebollo, et al.. (2016). 4.5kV SiC MOSFET with boron doped gate dielectric. 13 indexed citations
8.
Berthou, Maxime, Dominique Planson, & Dominique Tournier. (2015). Short-Circuit Capability Exploration of Silicon Carbide Devices. Materials science forum. 821-823. 810–813. 4 indexed citations
9.
Berthou, Maxime, et al.. (2015). Investigation of Using SiC MOSFET for High Temperature Applications. EPE Journal. 25(2). 5–11. 6 indexed citations
10.
Berthou, Maxime, et al.. (2015). State of art of current and future technologies in current limiting devices. 175–180. 9 indexed citations
11.
Berthou, Maxime, et al.. (2015). Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions. 615?617. 1–9. 14 indexed citations
12.
Soler, Victor, Maxime Berthou, Andrei Mihăilă, et al.. (2015). Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. 3 indexed citations
13.
Perpiñà, X., et al.. (2014). Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes. Journal of Physics D Applied Physics. 47(38). 385101–385101. 7 indexed citations
14.
Berthou, Maxime, Philippe Godignon, J.I. Calvo, et al.. (2014). Comparison of 5kV SiC JBS and PiN Diodes. Materials science forum. 778-780. 867–870. 4 indexed citations
15.
Bartolf, Holger, et al.. (2014). Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications. Materials science forum. 778-780. 795–799. 16 indexed citations
16.
Planson, Dominique, et al.. (2013). Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes. Materials science forum. 740-742. 609–612. 6 indexed citations
17.
Berthou, Maxime, Philippe Godignon, & José del R. Millán. (2013). Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs. IEEE Transactions on Power Electronics. 29(9). 4970–4977. 39 indexed citations
18.
Tadjer, Marko J., A. Constant, Philippe Godignon, et al.. (2013). Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress. Materials science forum. 740-742. 553–556. 4 indexed citations
19.
Hazdra, P., et al.. (2013). Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation. Materials science forum. 740-742. 661–664. 18 indexed citations
20.
Berthou, Maxime, Philippe Godignon, Pierre Brosselard, Dominique Tournier, & José del R. Millán. (2012). Integration of Temperature and Current Sensors in 4H-SiC VDMOS. Materials science forum. 717-720. 1093–1096. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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