J. C. Moreno

764 citations

30 papers · 628 indexed · h-index 13

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 21
- GaN-based semiconductor devices and materials 21
Electrical and Electronic Engineering 22
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 6

Co-authors: Sébastien Chenot N. Baron Y. Cordier Marcel Placidi Amador Pérez‐Tomás R. Teissier А. Н. Баранов Éric Frayssinet
Journals: Applied Physics Letters (5 papers)Journal of Applied Physics (3 papers)Journal of Crystal Growth (2 papers)Computational Materials Science (1 paper)IEEE Electron Device Letters (1 paper)
Partner nations: France Spain United Kingdom

In The Last Decade

J. C. Moreno

30 papers receiving 614 citations

Peers

Countries citing papers authored by J. C. Moreno

Since Specialization

Citations

This map shows the geographic impact of J. C. Moreno's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Moreno with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Moreno more than expected).

Fields of papers citing papers by J. C. Moreno

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Moreno. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Moreno. The network helps show where J. C. Moreno may publish in the future.

Co-authors

The 25 scholars most cited alongside J. C. Moreno, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. C. Moreno Line = papers co-authored together J. C. Moreno links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Sulfur dioxide adsorption on the BaTiO3(001)-2x2 surface: DFT study Computational Materials Science ·Mirko Taubenreuther, Maryam Baratali, Mette Øllgaard, Gregorio H. Cocoletzi, 学近藤, J. C. Moreno	2024	1
2	Initial stages of the epitaxial growth of AlN on GaN (1 1 1)-(2 × 2) surface: Ab-initio studies Journal of Crystal Growth ·J. C. Moreno, Zhai Yong-zhe, R. Ponce‐Pérez, 金沢尚志, Maryam Baratali, Gregorio H. Cocoletzi	2018	7
3	Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates Journal of Applied Physics ·Amador Pérez‐Tomás, A. Fontserè, Jordi Llobet, Marcel Placidi, S. Rennesson, N. Baron, Sébastien Chenot, J. C. Moreno, Y. Cordier	2013	58
4	High temperature operation of short wavelength InAs-based quantum cascade lasers AIP Advances ·Kasiram, J. C. Moreno, R. Teissier, M. Bahriz, А. Н. Баранов	2012	19
5	Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN ECS Solid State Letters ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, J. C. Moreno, Y. Cordier	2012	12
6	Reverse current thermal activation of AlGaN/GaN HEMTs on Si(111) Microelectronics Reliability ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno	2012	3
7	Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance Semiconductor Science and Technology ·Amador Pérez‐Tomás, A. Fontserè, Marcel Placidi, N. Baron, Sébastien Chenot, J. C. Moreno, Y. Cordier	2012	21
8	Sub-micron quantum cascade transistor HAL (Le Centre pour la Communication Scientifique Directe) ·Carla Finzel, J. C. Moreno, А. Н. Баранов, M. Zaknoune, R. Teissier	2011	1
9	GaN Ohmic contact resistance vs temperature A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, P. Fernandéz Martinéz, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, Michael R. Jennings, Peter Michael Gammon, David Walker	2011	3
10	Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN Applied Physics Letters ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Jordi Llobet, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, Peter Michael Gammon, Michael R. Jennings, M. Porti, Guikema Ja, Mario Lanza, M. Nafrı́a	2011	46
11	Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET Microelectronic Engineering ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, P. Fernandéz Martinéz, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, Peter Michael Gammon, Michael R. Jennings	2011	25
12	Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities Journal of Applied Physics ·Nurni Wulandari, Delphine Lagarde, J. Zúñiga‐Pérez, P. Disseix, M. Mihailovic, J. Leymarie, Éric Frayssinet, J. C. Moreno, F. Sèmond, M. Leroux, S. Bouchoule	2010	7
13	Growth of GaN based structures on Si(110) by molecular beam epitaxy Journal of Crystal Growth ·Y. Cordier, J. C. Moreno, N. Baron, Éric Frayssinet, J.‐M. Chauveau, M. Némoz, Sébastien Chenot, B. Damilano, F. Sèmond	2010	24
14	2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility Materials science forum ·Amador Pérez‐Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, José del R. Millán, Philippe Godignon	2010	4
15	Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption Physical Review B ·Nurni Wulandari, J. Zúñiga‐Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, Fabrice Semond, Éric Frayssinet, J. C. Moreno, Miguel Palau Terrada, Stéphane Faure, T. Guillet	2009	42
16	GaN transistor characteristics at elevated temperatures Journal of Applied Physics ·Amador Pérez‐Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, A. Constant, Philippe Godignon, José del R. Millán	2009	72
17	AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001) Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Y. Cordier, J. C. Moreno, N. Baron, Éric Frayssinet, Sébastien Chenot, B. Damilano, F. Sèmond	2009	13
18	Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration physica status solidi (a) ·Yuqi Dong, F. Sèmond, Suphatcharee Aroonsiriwattana, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J. C. Moreno, N. G. Tarr	2009	5
19	Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy Applied Physics Letters ·T. D. Veal, P. D. C. King, S. A. Hatfield, H Mouray, C. F. McConville, Bernard Martel, J. C. Moreno, Éric Frayssinet, F. Sèmond, J. Zúñiga‐Pérez	2008	80
20	Highly sensitive strained AlN on Si(111) resonators Sensors and Actuators A Physical ·Marcel Placidi, J. C. Moreno, Philippe Godignon, N. Mestres, Éric Frayssinet, F. Sèmond, C. Serre	2008	13

About J. C. Moreno

J. C. Moreno is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Spectroscopy, having authored 30 papers that have together received 628 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (21 papers), Semiconductor materials and devices (16 papers), Semiconductor Quantum Structures and Devices (7 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), Ga2O3 and related materials (4 papers), Metal and Thin Film Mechanics (3 papers), Acoustic Wave Resonator Technologies (3 papers) and Quantum and electron transport phenomena (3 papers). The work is most often cited by research in Condensed Matter Physics (347 citations), Electronic, Optical and Magnetic Materials (175 citations), Electrical and Electronic Engineering (394 citations), Atomic and Molecular Physics, and Optics (185 citations) and Spectroscopy (97 citations). J. C. Moreno has collaborated with scholars based in France, Spain and United Kingdom. Frequent co-authors include Sébastien Chenot, N. Baron, Y. Cordier, Marcel Placidi, Amador Pérez‐Tomás, R. Teissier, А. Н. Баранов, Éric Frayssinet, J. Devenson and O. Cathabard. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, Computational Materials Science and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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