Fernando Aguirre

1.8k total citations · 1 hit paper
56 papers, 571 citations indexed

About

Fernando Aguirre is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Cognitive Neuroscience. According to data from OpenAlex, Fernando Aguirre has authored 56 papers receiving a total of 571 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 18 papers in Cellular and Molecular Neuroscience and 7 papers in Cognitive Neuroscience. Recurrent topics in Fernando Aguirre's work include Advanced Memory and Neural Computing (35 papers), Semiconductor materials and devices (28 papers) and Ferroelectric and Negative Capacitance Devices (21 papers). Fernando Aguirre is often cited by papers focused on Advanced Memory and Neural Computing (35 papers), Semiconductor materials and devices (28 papers) and Ferroelectric and Negative Capacitance Devices (21 papers). Fernando Aguirre collaborates with scholars based in Argentina, Spain and China. Fernando Aguirre's co-authors include Sebastián Pazos, Félix Palumbo, Mario Lanza, E. Miranda, Fei Hui, S. Lombardo, M. Eizenberg, J. Suñé, Chao Wen and J.B. Roldán and has published in prestigious journals such as Nature, Advanced Materials and SHILAP Revista de lepidopterología.

In The Last Decade

Fernando Aguirre

48 papers receiving 559 citations

Hit Papers

The growing memristor ind... 2025 2026 2025 10 20 30

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Fernando Aguirre Argentina 12 493 143 141 60 46 56 571
Sebastián Pazos Argentina 12 481 1.0× 101 0.7× 169 1.2× 60 1.0× 65 1.4× 63 576
Quentin Rafhay France 15 657 1.3× 117 0.8× 119 0.8× 43 0.7× 74 1.6× 61 700
William A. Gaviria Rojas United States 7 313 0.6× 92 0.6× 171 1.2× 55 0.9× 67 1.5× 10 399
Zhuorui Wang China 16 687 1.4× 301 2.1× 113 0.8× 75 1.3× 51 1.1× 26 800
Alexander Hardtdegen Germany 11 515 1.0× 204 1.4× 88 0.6× 77 1.3× 26 0.6× 16 565
Jacopo Frascaroli Italy 14 511 1.0× 182 1.3× 173 1.2× 41 0.7× 58 1.3× 21 571
Damien Deleruyelle France 17 789 1.6× 156 1.1× 241 1.7× 137 2.3× 27 0.6× 66 844
Doyoon Lee South Korea 6 342 0.7× 121 0.8× 225 1.6× 55 0.9× 61 1.3× 14 482
Sameer Kumar Mallik India 12 340 0.7× 104 0.7× 197 1.4× 59 1.0× 30 0.7× 23 416
Jin Feng Leong Singapore 11 496 1.0× 100 0.7× 290 2.1× 53 0.9× 78 1.7× 17 604

Countries citing papers authored by Fernando Aguirre

Since Specialization
Citations

This map shows the geographic impact of Fernando Aguirre's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fernando Aguirre with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fernando Aguirre more than expected).

Fields of papers citing papers by Fernando Aguirre

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fernando Aguirre. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fernando Aguirre. The network helps show where Fernando Aguirre may publish in the future.

Co-authorship network of co-authors of Fernando Aguirre

This figure shows the co-authorship network connecting the top 25 collaborators of Fernando Aguirre. A scholar is included among the top collaborators of Fernando Aguirre based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fernando Aguirre. Fernando Aguirre is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ma, Yinchang, Maolin Chen, Fernando Aguirre, et al.. (2025). Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array. Nano Letters. 25(6). 2528–2537. 6 indexed citations
2.
Padovani, Andrea, Paolo La Torraca, Fernando Aguirre, et al.. (2025). Microscopic Analysis of Degradation and Breakdown Kinetics in HfO2 Gate Dielectric after Ions Irradiation. ACS Applied Materials & Interfaces. 17(37). 52814–52825.
3.
Kaiser, Nico, Eszter Piros, Yu Duan, et al.. (2025). All HfOx-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer. ACS Applied Materials & Interfaces. 17(41). 57632–57643.
4.
Lanza, Mario, Sebastián Pazos, Fernando Aguirre, et al.. (2025). The growing memristor industry. Nature. 640(8059). 613–622. 35 indexed citations breakdown →
5.
Alharbi, Osamah, Sebastián Pazos, Kaichen Zhu, et al.. (2024). Integration of Ag-based threshold switching devices in silicon microchips. Materials Science and Engineering R Reports. 161. 100837–100837. 2 indexed citations
6.
Han, Tingting, Fernando Aguirre, Kaichen Zhu, et al.. (2024). Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption. Advanced Functional Materials. 34(41). 9 indexed citations
7.
Miranda, E., et al.. (2023). SPICE Simulation of Quantum Transport in Al 2 O 3 /HfO 2 -Based Antifuse Memory Cells. IEEE Electron Device Letters. 44(7). 1180–1183. 1 indexed citations
8.
García, H., Fernando Aguirre, Mireia Bargalló González, et al.. (2023). Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices. Journal of Physics D Applied Physics. 56(36). 365108–365108. 8 indexed citations
9.
Aguirre, Fernando, Eszter Piros, Nico Kaiser, et al.. (2023). Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks. SHILAP Revista de lepidopterología. 1(3). 1 indexed citations
10.
Aguirre, Fernando, J. Suñé, & E. Miranda. (2022). SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices. Micromachines. 13(2). 330–330. 31 indexed citations
11.
Pazos, Sebastián, et al.. (2022). Wear-out and breakdown of Ta2O5/Nb:SrTiO3 stacks. Solid-State Electronics. 198. 108462–108462.
12.
Aguirre, Fernando, Alok Ranjan, Nagarajan Raghavan, et al.. (2021). Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects. Applied Physics Express. 14(12). 121001–121001. 3 indexed citations
13.
Lanza, Mario, Félix Palumbo, Yuanyuan Shi, et al.. (2021). Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching. Advanced Electronic Materials. 8(8). 28 indexed citations
14.
Pazos, Sebastián, et al.. (2020). Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study. Journal of Applied Physics. 127(17). 9 indexed citations
15.
Pazos, Sebastián, et al.. (2020). Breakdown transients in high-k multilayered MOS stacks: Role of the oxide–oxide thermal boundary resistance. Journal of Applied Physics. 128(3). 2 indexed citations
16.
Aguirre, Fernando, Andrea Padovani, Alok Ranjan, et al.. (2019). Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–8. 2 indexed citations
17.
Aguirre, Fernando, et al.. (2018). Susceptibility of eucalyptus species and hybrids to the gall wasp Leptocybe invasa (Hymenoptera: Eulophidae) in northern Misiones, Argentina. Forest Systems. 27(1). eSC01–eSC01. 1 indexed citations
18.
Pazos, Sebastián, et al.. (2018). Heavy Ion Microbeam Experimental Study of ASET on a Full-Custom CMOS OpAmp. 1–5. 1 indexed citations
19.
Palumbo, Félix, Sebastián Pazos, Fernando Aguirre, et al.. (2017). Temperature dependence of trapping effects in metal gates/Al 2 O 3 /InGaAs stacks. Solid-State Electronics. 132. 12–18. 4 indexed citations
20.
Pazos, Sebastián, Félix Palumbo, & Fernando Aguirre. (2017). Analysis and comparison of the CV-Dispersion of high-k, bi-layered MOS InGaAs/InP stacks. 1–4. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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