C. W. Nieh

1.4k total citations
64 papers, 1.1k citations indexed

About

C. W. Nieh is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, C. W. Nieh has authored 64 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Atomic and Molecular Physics, and Optics, 41 papers in Electrical and Electronic Engineering and 25 papers in Materials Chemistry. Recurrent topics in C. W. Nieh's work include Semiconductor materials and interfaces (36 papers), Semiconductor materials and devices (24 papers) and Silicon and Solar Cell Technologies (13 papers). C. W. Nieh is often cited by papers focused on Semiconductor materials and interfaces (36 papers), Semiconductor materials and devices (24 papers) and Silicon and Solar Cell Technologies (13 papers). C. W. Nieh collaborates with scholars based in United States, Taiwan and Sweden. C. W. Nieh's co-authors include W. J. Meng, William L. Johnson, E. Kolawa, T. C. McGill, Jack Y. Josefowicz, D. H. Chow, M‐A. Nicolet, J. M. Molarius, Shin Hashimoto and W. L. Johnson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. W. Nieh

62 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. W. Nieh United States	21	633	617	415	195	161	64	1.1k
A. R. Von Neida United States	16	556 0.9×	437 0.7×	372 0.9×	117 0.6×	103 0.6×	35	946
S. R. Herd United States	18	484 0.8×	551 0.9×	535 1.3×	135 0.7×	356 2.2×	45	1.2k
В. Т. Бублик Russia	18	440 0.7×	298 0.5×	601 1.4×	196 1.0×	137 0.9×	115	997
A. Rocher France	17	532 0.8×	603 1.0×	302 0.7×	152 0.8×	40 0.2×	74	917
J. Angilello United States	16	539 0.9×	344 0.6×	419 1.0×	90 0.5×	93 0.6×	33	956
K. Y. Ahn United States	18	456 0.7×	443 0.7×	317 0.8×	222 1.1×	182 1.1×	67	1000
T. B. Light United States	12	472 0.7×	449 0.7×	344 0.8×	76 0.4×	100 0.6×	20	827
T. Tuomi Finland	16	814 1.3×	422 0.7×	382 0.9×	211 1.1×	50 0.3×	128	1.1k
Chin‐An Chang United States	16	457 0.7×	483 0.8×	250 0.6×	147 0.8×	62 0.4×	47	841
J. L. Sacedón Spain	18	387 0.6×	455 0.7×	346 0.8×	144 0.7×	34 0.2×	80	910

Countries citing papers authored by C. W. Nieh

Since Specialization

Citations

This map shows the geographic impact of C. W. Nieh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. W. Nieh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. W. Nieh more than expected).

Fields of papers citing papers by C. W. Nieh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. W. Nieh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. W. Nieh. The network helps show where C. W. Nieh may publish in the future.

Co-authorship network of co-authors of C. W. Nieh

This figure shows the co-authorship network connecting the top 25 collaborators of C. W. Nieh. A scholar is included among the top collaborators of C. W. Nieh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. W. Nieh. C. W. Nieh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nieh, C. W., Zisheng Yang, A. R. Kortan, et al.. (2008). High-quality nanothick single-crystal Y2O3 films epitaxially grown on Si (111): Growth and structural characteristics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(3). 1124–1127. 11 indexed citations

Nieh, C. W., Y. J. Lee, Wen‐Chung Lee, et al.. (2008). Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection. Applied Physics Letters. 92(6). 15 indexed citations

Rensch, D.B., et al.. (1991). Fabrication and characterization of high-T/sub c/ superconducting X-band resonators and bandpass filters. IEEE Transactions on Magnetics. 27(2). 2553–2556. 9 indexed citations

Fathauer, R. W., Q. F. Xiao, Shin Hashimoto, & C. W. Nieh. (1990). Columnar epitaxy of PtSi on Si (111). Applied Physics Letters. 57(7). 686–688. 13 indexed citations

Fathauer, R. W., C. W. Nieh, Q. F. Xiao, & Shin Hashimoto. (1990). Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy. Thin Solid Films. 184(1-2). 335–342. 4 indexed citations

Lin, T. L., C. W. Nieh, Shin Hashimoto, & Q. F. Xiao. (1990). Growth of IrSi3 by molecular beam epitaxy. Thin Solid Films. 184(1-2). 343–348. 5 indexed citations

Nieh, C. W. & T. L. Lin. (1989). I n s i t u transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C. Journal of Applied Physics. 66(7). 3402–3404.

Sundqvist, B., et al.. (1989). Radiation-induced interface phenomena: Decoration of high-energy density ion tracks. Applied Physics Letters. 54(16). 1513–1515. 6 indexed citations

Kolawa, E., J. M. Molarius, C. W. Nieh, et al.. (1988). Chemical stability of vanadium boride with aluminum. Thin Solid Films. 166. 29–36. 7 indexed citations

10.

Kolawa, E., et al.. (1988). Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers. MRS Proceedings. 126. 2 indexed citations

11.

Mii, Y. J., T. L. Lin, Y. C. Kao, et al.. (1988). Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(2). 696–698. 20 indexed citations

12.

Miles, R. H., T. C. McGill, P. P. Chow, et al.. (1988). Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices. Applied Physics Letters. 52(11). 916–918. 22 indexed citations

13.

Nieh, C. W., Fenfen Xiong, C. C. Ahn, et al.. (1987). Formation of Buried Oxide in Mev Oxygen Implanted Silicon. MRS Proceedings. 107. 1 indexed citations

14.

Kao, Y. C., K. L. Wang, Bin Wu, et al.. (1987). Molecular beam epitaxial growth of CoSi2 on porous Si. Applied Physics Letters. 51(22). 1809–1811. 21 indexed citations

15.

Jamieson, David N., Gang Bai, Y. C. Kao, et al.. (1987). On the Critical Layer Thickness of Strained-Layer Heteroepitaxial CoSi₂ Films on 〈111〉Si. MRS Proceedings. 91. 7 indexed citations

16.

Nieh, C. W., et al.. (1987). Formation of epitaxial NiSi2 of single orientation on (111) Si inside miniature size oxide openings. Applied Physics Letters. 50(5). 259–261. 29 indexed citations

17.

Lin, T. L., L.P. Sadwick, Y. C. Kao, et al.. (1987). Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon. Applied Physics Letters. 51(11). 814–816. 33 indexed citations

18.

Meng, W. J., C. W. Nieh, & William L. Johnson. (1987). Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique. Applied Physics Letters. 51(21). 1693–1695. 73 indexed citations

19.

Nieh, C. W., et al.. (1987). Partial epitaxial growth of HfSi2 films grown on silicon. Journal of Applied Physics. 61(6). 2393–2395. 11 indexed citations

20.

Nieh, C. W., et al.. (1986). Cross-sectional transmission electron microscope study of solid phase epitaxial growth in BF+2 -implanted (001)Si. Journal of Applied Physics. 60(10). 3546–3549. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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