C. W. Nieh

1.4k citations

64 papers · 1.1k indexed · h-index 21

Electrical and Electronic Engineering top 10%
Atomic and Molecular Physics, and Optics top 5%
Materials Chemistry top 10%
Condensed Matter Physics top 5%
Mechanical Engineering

Co-authors: W. J. Meng William L. Johnson E. Kolawa T. C. McGill D. H. Chow Jack Y. Josefowicz M‐A. Nicolet J. M. Molarius
Topics: Semiconductor materials and interfaces (36 papers)Semiconductor materials and devices (24 papers)Silicon and Solar Cell Technologies (13 papers)
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: United States Taiwan Sweden

In The Last Decade

C. W. Nieh

62 papers receiving 1.1k citations

Peers

Countries citing papers authored by C. W. Nieh

Since Specialization

Citations

This map shows the geographic impact of C. W. Nieh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. W. Nieh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. W. Nieh more than expected).

Fields of papers citing papers by C. W. Nieh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. W. Nieh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. W. Nieh. The network helps show where C. W. Nieh may publish in the future.

Co-authorship network of co-authors of C. W. Nieh

This figure shows the co-authorship network connecting the top 25 collaborators of C. W. Nieh. A scholar is included among the top collaborators of C. W. Nieh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. W. Nieh. C. W. Nieh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High-quality nanothick single-crystal Y2O3 films epitaxially grown on Si (111): Growth and structural characteristics 2008 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown),(unknown),C. W. Nieh,Zisheng Yang,A. R. Kortan,M. Hong,J. Kwo,Chia‐Hung Hsu	11
2	Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection 2008 ·Applied Physics Letters ·C. W. Nieh,Y. J. Lee,Wen‐Chung Lee,Zisheng Yang,A. R. Kortan,M. Hong,J. Kwo,Chia‐Hung Hsu	15
3	Fabrication and characterization of high-T/sub c/ superconducting X-band resonators and bandpass filters 1991 ·IEEE Transactions on Magnetics ·D.B. Rensch,Jack Y. Josefowicz,(unknown),C. W. Nieh,(unknown),(unknown)	9
4	Growth of IrSi3 by molecular beam epitaxy 1990 ·Thin Solid Films ·T. L. Lin,C. W. Nieh,Shin Hashimoto,Q. F. Xiao	5
5	Columnar epitaxy of PtSi on Si (111) 1990 ·Applied Physics Letters ·R. W. Fathauer,Q. F. Xiao,Shin Hashimoto,C. W. Nieh	13
6	I n s i t u transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C 1989 ·Journal of Applied Physics ·C. W. Nieh,T. L. Lin	0
7	Thermal reaction of Al/Ti bilayers with contaminated interface 1989 ·Journal of Applied Physics ·(unknown),L.T. Tran,C. W. Nieh,M-A. Nicolet	6
8	Radiation-induced interface phenomena: Decoration of high-energy density ion tracks 1989 ·Applied Physics Letters ·(unknown),B. Sundqvist,C. W. Nieh,T. A. Tombrello	6
9	Chemical stability of vanadium boride with aluminum 1988 ·Thin Solid Films ·E. Kolawa,J. M. Molarius,(unknown),C. W. Nieh,L.T. Tran,M.−A. Nicolet,F. C. T. So,Jun Wei	7
10	Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers 1988 ·MRS Proceedings ·E. Kolawa,C. W. Nieh,(unknown),J. M. Molarius,M‐A. Nicolet	2
11	Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices 1988 ·Applied Physics Letters ·R. H. Miles,T. C. McGill,P. P. Chow,(unknown),R. J. Hauenstein,C. W. Nieh,M. D. Strathman	22
12	Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates 1988 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Y. J. Mii,T. L. Lin,Y. C. Kao,Bin Wu,(unknown),C. W. Nieh,David N. Jamieson,(unknown)	20
13	Indium oxide diffusion barriers for Al/Si metallizations 1988 ·Applied Physics Letters ·E. Kolawa,C. M. Garland,L.T. Tran,C. W. Nieh,J. M. Molarius,(unknown),M‐A. Nicolet,Jun Wei	11
14	Molecular beam epitaxial growth of CoSi2 on porous Si 1987 ·Applied Physics Letters ·Y. C. Kao,K. L. Wang,Bin Wu,T. L. Lin,C. W. Nieh,David N. Jamieson,Gang Bai	21
15	On the Critical Layer Thickness of Strained-Layer Heteroepitaxial CoSi₂ Films on 〈111〉Si 1987 ·MRS Proceedings ·David N. Jamieson,Gang Bai,Y. C. Kao,C. W. Nieh,M.−A. Nicolet,K. L. Wang	7
16	Formation of Buried Oxide in Mev Oxygen Implanted Silicon 1987 ·MRS Proceedings ·C. W. Nieh,Fenfen Xiong,C. C. Ahn,Zhenhua Zhou,David N. Jamieson,T. Vreeland,Brent Fultz,T.A. Tombrello	1
17	Partial epitaxial growth of HfSi2 films grown on silicon 1987 ·Journal of Applied Physics ·(unknown),C. W. Nieh,(unknown)	11
18	Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique 1987 ·Applied Physics Letters ·W. J. Meng,C. W. Nieh,William L. Johnson	73
19	Cross-sectional transmission electron microscope study of residual defects in BF+2-implanted (001)Si 1986 ·Journal of Applied Physics ·C. W. Nieh,(unknown)	40
20	Cross-sectional transmission electron microscope study of solid phase epitaxial growth in BF+2 -implanted (001)Si 1986 ·Journal of Applied Physics ·C. W. Nieh,(unknown)	18

About C. W. Nieh

C. W. Nieh is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Surfaces, Coatings and Films, having authored 64 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (36 papers), Semiconductor materials and devices (24 papers) and Silicon and Solar Cell Technologies (13 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (617 citations), Condensed Matter Physics (195 citations) and Electrical and Electronic Engineering (633 citations). C. W. Nieh has collaborated with scholars based in United States, Taiwan and Sweden. Frequent co-authors include W. J. Meng, William L. Johnson, E. Kolawa, T. C. McGill, D. H. Chow, Jack Y. Josefowicz, M‐A. Nicolet, J. M. Molarius, Shin Hashimoto and W. L. Johnson. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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