Maki Kushimoto

1.7k total citations · 1 hit paper
58 papers, 1.4k citations indexed

About

Maki Kushimoto is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Maki Kushimoto has authored 58 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Condensed Matter Physics, 27 papers in Electronic, Optical and Magnetic Materials and 22 papers in Electrical and Electronic Engineering. Recurrent topics in Maki Kushimoto's work include GaN-based semiconductor devices and materials (54 papers), Ga2O3 and related materials (27 papers) and Semiconductor materials and devices (15 papers). Maki Kushimoto is often cited by papers focused on GaN-based semiconductor devices and materials (54 papers), Ga2O3 and related materials (27 papers) and Semiconductor materials and devices (15 papers). Maki Kushimoto collaborates with scholars based in Japan, United States and South Korea. Maki Kushimoto's co-authors include Hiroshi Amano, Yoshio Honda, Chiaki Sasaoka, Ziyi Zhang, L. J. Schowalter, Naoharu Sugiyama, Manato Deki, Shugo Nitta, Tadayoshi Sakai and Atsushi Tanaka and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and Nanoscale.

In The Last Decade

Maki Kushimoto

57 papers receiving 1.3k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

2019 244 citations Ziyi Zhang, Maki Kushimoto et al. Applied Physics Express profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Maki Kushimoto Japan	18	1.1k	568	564	426	375	58	1.4k
Zongshun Liu China	18	1.3k 1.1×	475 0.8×	645 1.1×	519 1.2×	403 1.1×	181	1.5k
Baxter Moody United States	22	1.3k 1.2×	471 0.8×	783 1.4×	545 1.3×	489 1.3×	50	1.5k
Luca Sulmoni Germany	17	877 0.8×	360 0.6×	480 0.9×	305 0.7×	313 0.8×	43	1.0k
Martin Guttmann Germany	21	1.2k 1.1×	306 0.5×	831 1.5×	516 1.2×	470 1.3×	53	1.3k
Shinya Nunoue Japan	15	932 0.8×	393 0.7×	380 0.7×	435 1.0×	176 0.5×	61	1.1k
V. Kuryatkov United States	20	792 0.7×	617 1.1×	730 1.3×	479 1.1×	282 0.8×	83	1.3k
A. Chitnis United States	26	1.7k 1.5×	634 1.1×	964 1.7×	653 1.5×	593 1.6×	38	1.9k
Isaac Bryan United States	26	1.7k 1.5×	765 1.3×	972 1.7×	702 1.6×	574 1.5×	52	2.0k
Frank Mehnke Germany	25	1.6k 1.4×	462 0.8×	1.0k 1.8×	681 1.6×	515 1.4×	56	1.7k
Craig Moe United States	18	1.2k 1.0×	394 0.7×	734 1.3×	538 1.3×	595 1.6×	45	1.4k

Countries citing papers authored by Maki Kushimoto

Since Specialization

Citations

This map shows the geographic impact of Maki Kushimoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maki Kushimoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maki Kushimoto more than expected).

Fields of papers citing papers by Maki Kushimoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maki Kushimoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maki Kushimoto. The network helps show where Maki Kushimoto may publish in the future.

Co-authorship network of co-authors of Maki Kushimoto

This figure shows the co-authorship network connecting the top 25 collaborators of Maki Kushimoto. A scholar is included among the top collaborators of Maki Kushimoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maki Kushimoto. Maki Kushimoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zhang, Ziyi, et al.. (2025). Recent progress in the development of AlGaN-based deep-ultraviolet laser diodes. 24–24.

Yoshikawa, Akira, Maki Kushimoto, Yoshio Honda, et al.. (2024). Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping. IEEE Transactions on Electron Devices. 71(5). 3396–3402. 13 indexed citations

Nagata, Kengo, Yoshiki Saito, Keita Kataoka, et al.. (2023). A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes. Crystals. 13(3). 524–524. 7 indexed citations

Nagata, Kengo, et al.. (2022). Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED. Applied Physics Express. 15(4). 44001–44001. 8 indexed citations

Kushimoto, Maki, Ziyi Zhang, Yoshio Honda, et al.. (2021). Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate. Japanese Journal of Applied Physics. 61(1). 10601–10601. 6 indexed citations

Piva, Francesco, Carlo De Santi, Matteo Buffolo, et al.. (2021). Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations. Padua Research Archive (University of Padova). 24–24. 1 indexed citations

Cheng, Zhe, Yee Rui Koh, Abdullah Mamun, et al.. (2020). Experimental observation of high intrinsic thermal conductivity of AlN. Physical Review Materials. 4(4). 121 indexed citations

Sakai, Tadayoshi, Maki Kushimoto, Ziyi Zhang, et al.. (2020). On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR. Applied Physics Letters. 116(12). 48 indexed citations

Takahashi, Masahiro, Atsushi Tanaka, Yuto Ando, et al.. (2020). Impact of high-temperature implantation of Mg ions into GaN. Japanese Journal of Applied Physics. 59(5). 56502–56502. 14 indexed citations

10.

Takahashi, Masahiro, Atsushi Tanaka, Yuto Ando, et al.. (2019). Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature. physica status solidi (b). 257(4). 17 indexed citations

11.

Usami, Shigeyoshi, Yuto Ando, Atsushi Tanaka, et al.. (2019). Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics. 58(SC). SCCD25–SCCD25. 51 indexed citations

12.

Tanaka, Atsushi, Kentaro Nagamatsu, Shigeyoshi Usami, et al.. (2019). V-shaped dislocations in a GaN epitaxial layer on GaN substrate. AIP Advances. 9(9). 10 indexed citations

13.

Ye, Zheng, Shugo Nitta, Kentaro Nagamatsu, et al.. (2019). Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth. Journal of Crystal Growth. 516. 63–66. 13 indexed citations

14.

Liu, Zhibin, Shugo Nitta, Shigeyoshi Usami, et al.. (2018). Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 509. 50–53. 4 indexed citations

15.

Liu, Zhibin, Shugo Nitta, Yoann Robin, et al.. (2018). Morphological study of InGaN on GaN substrate by supersaturation. Journal of Crystal Growth. 508. 58–65. 11 indexed citations

16.

Robin, Yoann, Si‐Young Bae, T. V. Shubina, et al.. (2018). Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes. Scientific Reports. 8(1). 7311–7311. 55 indexed citations

17.

Ogura, Mariko, Yuto Ando, Shigeyoshi Usami, et al.. (2017). Development of sustainable smart society based on transformative electronics. 30.1.1–30.1.4. 2 indexed citations

18.

Tanaka, Atsushi, Yuto Ando, Kentaro Nagamatsu, et al.. (2017). m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates. physica status solidi (a). 215(9). 20 indexed citations

19.

Lee, Joo‐Ho, Si‐Young Bae, Kaddour Lekhal, et al.. (2016). Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer. Journal of Crystal Growth. 468. 547–551. 7 indexed citations

20.

Kushimoto, Maki, Yoshio Honda, Hiroshi Amano, et al.. (2016). Study of radiation detection properties of GaN pn diode. Japanese Journal of Applied Physics. 55(5S). 05FJ02–05FJ02. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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