A. Yoshikawa

1.8k citations

89 papers · 1.5k indexed · h-index 22

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 64
- GaN-based semiconductor devices and materials 64
Electronic, Optical and Magnetic Materials 32
- Ga2O3 and related materials 32

Co-authors: Ke Xu Yoshihiro Ishitani Xinqiang Wang Shigeki Yamaga Hideaki Kasai Haruo Kasai Naoki Hashimoto Haruna Saito
Journals: Journal of Crystal Growth (18 papers)Applied Physics Letters (13 papers)Journal of Applied Physics (8 papers)physica status solidi (b) (7 papers)Journal of Electronic Materials (4 papers)
Partner nations: Japan China United States

In The Last Decade

A. Yoshikawa

88 papers receiving 1.5k citations

Peers

Countries citing papers authored by A. Yoshikawa

Since Specialization

Citations

This map shows the geographic impact of A. Yoshikawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Yoshikawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Yoshikawa more than expected).

Fields of papers citing papers by A. Yoshikawa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Yoshikawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Yoshikawa. The network helps show where A. Yoshikawa may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Yoshikawa, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Yoshikawa Line = papers co-authored together A. Yoshikawa links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A RORE-dependent Intronic Enhancer in the IL-7 Receptor-α Locus Controls Glucose Metabolism via Vγ4+ γδT17 Cells The Journal of Immunology ·Shizue Tani‐ichi, Kysara Aureldy Davonso Matualage, A. Yoshikawa, Hitomi Watanabe, Satsuki Kitano, Aki Ejima, Shinya Hatano, Hitoshi Miyachi, Guangwei Cui, Akihiro Shimba, Shinya Abe, Shohei Hori, Gen Kondoh, Sagar Sagar, Yasunobu Yoshikai, Koichi Ikuta	2024	1
2	Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN Journal of Applied Physics ·S. Schöche, Tino Hofmann, Vanya Darakchieva, N. Ben Sédrine, Xinqiang Wang, A. Yoshikawa, M. Schubert	2013	21
3	InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering Physical Review Letters ·J. Serrano, Alexeï Bosak, M. Krisch, F. J. Manjón, A. Romero, N. Garro, Xinqiang Wang, A. Yoshikawa, M. Kuball	2011	39
4	Abnormal magnetic-field dependence of Hall coefficient in InN epilayers Applied Physics Letters ·The Blade, M. A. Shakhov, V. N. Jmerik, T. V. Shubina, M. Mühlenbruch, S. V. Ivanov, Xinqiang Wang, A. Yoshikawa	2009	11
5	Lattice polarity detection of InN by circular photogalvanic effect Applied Physics Letters ·Qi Zhang, Xinqiang Wang, Xiaowei He, Chunming Yin, Fujun Xu, Bo Shen, Qianshuo Wei, Dua Alguhaimi, Yoshihiro Ishitani, A. Yoshikawa	2009	11
6	Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Yoshikawa, A. B. Smirnov, Naoki Hashimoto, Haruna Saito, Yoshihiro Ishitani, Xinqiang Wang	2008	47
7	Conduction and valence band edge properties of hexagonal InN characterized by optical measurements Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Yoshihiro Ishitani, Wataru Terashima, Faith Nelsen, A. Yoshikawa	2006	17
8	MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substrates physica status solidi (b) ·Shin Suzuki, P. Rybarczyk, Adriana Lins Silva, Yoshihiro Ishitani, A. Yoshikawa	2004	3
9	In-situ spectroscopic ellipsometry investigation and control of GaN growth mode in metal-organic vapor phase epitaxy at low pressures of 20 Torr Thin Solid Films ·赵亚昆, Ke Xu, Yoshihiro Ishitani, A. Yoshikawa	2004	4
10	Step‐Flow Growth of InN on N‐Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Ke Xu, Wataru Terashima, Toshio Hata, Naoki Hashimoto, Yoshihiro Ishitani, A. Yoshikawa	2002	25
11	Complete Elimination of Multi-angle Rotation Domains in ZnO Epilayers Grown on (0001) Sapphire Substrate physica status solidi (a) ·Xiaolong Du, Masashi Murakami, Hiroyuki Iwaki, A. Yoshikawa	2002	18
12	Polarity inversion of GaN films by trimethyl–aluminum preflow in low-pressure metalorganic vapor phase epitaxy growth Journal of Applied Physics ·ANNA ROSE CHILDRESS, Ke Xu, Satoshi Arima, A. Yoshikawa, Kiyoshi Takahashi	2002	32
13	Polarity control of GaN grown on sapphire substrate by RF-MBE Journal of Crystal Growth ·Ke Xu, H. M. Courtois, Uta Grebenstein, A. Yoshikawa, Kiyoshi Takahashi	2002	17
14	Kinetic Process of Polarity Selection in GaN Growth by RF-MBE physica status solidi (b) ·Ke Xu, H. M. Courtois, Uta Grebenstein, A. Yoshikawa, Kiyoshi Takahashi	2001	19
15	Spectroscopy of self-assembled CdS quantum dots in ZnSe Journal of Applied Physics ·Hailong Zhou, A. V. Nurmikko, Shuichi Nakamura, Keiichi Kitamura, Artur, Yi Jia, Masakazu Kobayashi, A. Yoshikawa, M. Shimotomai, Yasuyuki Kato	2000	1
16	Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD Journal of Crystal Growth ·Conghui Wang, Syuhei Kan, 顾洪潮, Min Han, Guili Yang, Chang‐Hee Hong, E.‐K. Suh, K. Y. Lim, Francis John Garuzooka, A. Yoshikawa	2000	11
17	Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii–vi compounds Journal of Electronic Materials ·刘亚萍, Masakazu Kobayashi, A. Yoshikawa	1995	4
18	Growth Kinetics in MOMBE‐ALE of ZnSe and CdSe as Determined by a New In‐Situ Optical Probing Method physica status solidi (b) ·A. Yoshikawa, Masaki Kobayashi, Shigeru Tokita	1995	7
19	“MBE-Like” and “CVD-like” atomic layer epitaxy of ZnSe in mombe system Journal of Crystal Growth ·A. Yoshikawa, 刻捷, Yuqi Huang, Shigeki Yamaga, Haruo Kasai	1990	26
20	A study of growth mechanism of ZnS and ZnSe in MOMBE using dimethylzinc and chalcogen hydrides as reactants Journal of Crystal Growth ·A. Yoshikawa, Saori Takeyama, Shigeki Yamaga, Hideaki Kasai	1989	14

About A. Yoshikawa

A. Yoshikawa is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Electrical and Electronic Engineering, having authored 89 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (64 papers), Semiconductor Quantum Structures and Devices (41 papers), ZnO doping and properties (35 papers), Ga2O3 and related materials (32 papers), Quantum Dots Synthesis And Properties (18 papers), Chalcogenide Semiconductor Thin Films (14 papers), Semiconductor materials and devices (14 papers) and Advanced Semiconductor Detectors and Materials (9 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (653 citations), Atomic and Molecular Physics, and Optics (631 citations), Materials Chemistry (855 citations) and Nuclear Energy and Engineering (6 citations). A. Yoshikawa has collaborated with scholars based in Japan, China and United States. Frequent co-authors include Ke Xu, Yoshihiro Ishitani, Xinqiang Wang, Shigeki Yamaga, Hideaki Kasai, Haruo Kasai, Naoki Hashimoto, Haruna Saito, Kiyoshi Takahashi and A. B. Smirnov. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Journal of Applied Physics, physica status solidi (b) and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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