I. P. Soshnikov

470 citations

35 papers · 307 indexed · h-index 9

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 13
- Semiconductor materials and interfaces 6
Electrical and Electronic Engineering
- Advancements in Semiconductor Devices and Circuit Design 8
- Integrated Circuits and Semiconductor Failure Analysis 4
- Semiconductor Lasers and Optical Devices 4
Condensed Matter Physics
- GaN-based semiconductor devices and materials 8
Materials Chemistry
Biomedical Engineering
- Nanowire Synthesis and Applications 14
Computational Mechanics
- Ion-surface interactions and analysis 6

Co-authors: V. M. Ustinov N. N. Ledentsov D. Bimberg Maria Stepanova S. K. Dew G. É. Cirlin N. A. Maleev A. F. Tsatsul’nikov
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Semiconductor Science and Technology (2 papers)Journal of Experimental and Theoretical Physics Letters (1 paper)Applied Physics Letters (1 paper)
Partner nations: Russia Germany France

In The Last Decade

I. P. Soshnikov

32 papers receiving 299 citations

Peers

Countries citing papers authored by I. P. Soshnikov

Since Specialization

Citations

This map shows the geographic impact of I. P. Soshnikov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. P. Soshnikov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. P. Soshnikov more than expected).

Fields of papers citing papers by I. P. Soshnikov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. P. Soshnikov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. P. Soshnikov. The network helps show where I. P. Soshnikov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside I. P. Soshnikov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. P. Soshnikov Line = papers co-authored together I. P. Soshnikov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Photovoltaic properties of InP NWs/p-Si heterostructure Journal of Physics Conference Series ·K. P. Kotlyar,Gen‐Hou Leu,R. R. Reznik,顺福马,Upendar R. Kallu,Helga Johannesdottir,А М Можаров,Mohammad Bashar Muselmani,Ivan S. Mukhin,I. P. Soshnikov,G. É. Cirlin	2019	1
2	InGaN/GaN QDs nanorods for light emitters: Processing and properties AIP conference proceedings ·K. P. Kotlyar,I. A. Morozov,P D Coyle,程有,M. H. M. Shilmy,N. V. Kryzhanovskaya,Upendar R. Kallu,茂木実,А. В. Нащекин,I. P. Soshnikov,G. É. Cirlin	2019	1
3	MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates Semiconductors ·R. R. Reznik,K. P. Kotlyar,I. P. Soshnikov,С. А. Кукушкін,А. В. Осипов,G. É. Cirlin	2018	1
4	AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates Journal of Physics D Applied Physics ·G. É. Cirlin,R. R. Reznik,I. V. Shtrom,А. И. Хребтов,I. P. Soshnikov,С. А. Кукушкін,尾田美保,Takeshi Kasama,N. Akopian	2017	21
5	InGaN/GaN heterostructures with lateral confinement for light emitting diodes Journal of Physics Conference Series ·K. P. Kotlyar,Rizka Wibi Amalia,I. A. Morozov,Upendar R. Kallu,Helga Johannesdottir,В.В. Лысак,I. P. Soshnikov	2016	1
6	Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate Thin Solid Films ·В. Н. Бессолов,韩云涛,E. V. Konenkova,A. A. Lipovskiĭ,А. В. Осипов,A. V. Redkov,I. P. Soshnikov,С. А. Кукушкін	2016	8
7	Fabrication of ordered GaAs nanowhiskers using electron-beam lithography Semiconductors ·I. P. Soshnikov,Donatello Fabiani,G. É. Cirlin,هنادي الجعيدي,Keon-Tae Son,Yu. B. Samsonenko,PontiusRobert Gilmore,А. И. Хребтов,V. M. Ustinov	2011	1
8	Terahertz electroluminescence of surface plasmons from nanostructured InN layers Applied Physics Letters ·T. V. Shubina,A. V. Andrianov,F.W. Ragay,V. N. Jmerik,I. P. Soshnikov,The Blade,A. E. Akarugwo,P. S. Kop’ev,Sergei Ivanov,V. A. Shalygin,A. N. Sofronov,D. A. Firsov,L. E. Vorob’ev,N. A. Gippius,J. Leymarie,Xinqiang Wang,Akihiko Yoshikawa	2010	12
9	Effect of growth atmosphere on the temperature profile along a nanowhisker Technical Physics Letters ·陶秘華,Ilya A. Fedorov,N. V. Sibirev,I. P. Soshnikov,В. Г. Дубровский	2008	2
10	Effect of deposition conditions on nanowhisker morphology Semiconductors ·В. Г. Дубровский,I. P. Soshnikov,N. V. Sibirev,G. É. Cirlin,V. M. Ustinov,Maria Tchernycheva,Jean‐Christophe Harmand	2007	5
11	Influence of MBE growth conditions on the surface morphology of Al(Ga)As nanowhiskers physica status solidi (a) ·A. A. Tonkikh,G. É. Cirlin,В. Г. Дубровский,N. V. Sibirev,I. P. Soshnikov,Yu. B. Samsonenko,Narjès Harrouche,V. M. Ustinov	2006	5
12	GaAs Nanowhisker Arrays Grown by Magnetron Sputter Deposition Technical Physics Letters ·I. P. Soshnikov	2005	4
13	Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization Semiconductor Science and Technology ·I. P. Soshnikov,A. R. Kovsh,V. M. Ustinov,N. V. Kryzhanovskaya,N. N. Ledentsov,D. Bimberg,Holm Kirmse,Wolfgang Neumann,Torelli Fabio,Gray Lin,Tsvetelin Stepanov,Li Xin Lim,Sien Chi	2004	1
14	Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique Semiconductors ·A. A. Tonkikh,G. É. Cirlin,Yu. B. Samsonenko,I. P. Soshnikov,V. M. Ustinov	2004	6
15	Sputtering from ion-beam-roughened Cu surfaces Physical review. B, Condensed matter ·Maria Stepanova,S. K. Dew,I. P. Soshnikov	2002	26
16	<title>MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·N. A. Maleev,A. R. Kovsh,A. E. Zhukov,S. S. Mikhrin,А. В. Васильев,Elizaveta Semenova,Yuri M. Shernyakov,E. V. Nikitina,Bing Bu,D. S. Sizov,I. P. Soshnikov,M. V. Maximov,N. N. Ledentsov,V. M. Ustinov,D. Bimberg,Жорес Иванович Алферов	2002	0
17	<title>Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in optoelectronics</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·N. N. Ledentsov,D. Litvinov,Dagmar Gerthsen,Maria Eduarda de Lima Maia,В. В. Болотов,B. R. Semyagin,V. A. Shchukin,I. P. Soshnikov,V. M. Ustinov,D. Bimberg	2002	4
18	Application of fullerene C 60 thin films as an electron-beam resist for micro- and nanolithography Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Teguh Ridka Fitrianto,Lolita Rotkina,Lim keun,M. Bilal Anwar,I. P. Soshnikov	1998	1
19	Sputtering of III–V semiconductors under argon atom and ion bombardment Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·I. P. Soshnikov,Yu. Kudriavtsev,A. V. Lunev,Н. А. Берт	1997	11
20	Influence of volume binding on the threshold energies for sputtering cascades from solids Technical Physics ·I. P. Soshnikov,Н. А. Берт	1996	0

About I. P. Soshnikov

I. P. Soshnikov is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 35 papers that have together received 307 indexed citations. Recurring topics across this work include Nanowire Synthesis and Applications (14 papers), Semiconductor Quantum Structures and Devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), GaN-based semiconductor devices and materials (8 papers), Ion-surface interactions and analysis (6 papers), Semiconductor materials and interfaces (6 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers) and Semiconductor Lasers and Optical Devices (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (200 citations), Electrical and Electronic Engineering (218 citations) and Condensed Matter Physics (44 citations). I. P. Soshnikov has collaborated with scholars based in Russia, Germany and France. Frequent co-authors include V. M. Ustinov, N. N. Ledentsov, D. Bimberg, Maria Stepanova, S. K. Dew, G. É. Cirlin, N. A. Maleev, A. F. Tsatsul’nikov, M. V. Maximov and S. S. Mikhrin. Their work appears in journals such as Semiconductor Science and Technology, Journal of Experimental and Theoretical Physics Letters, Applied Physics Letters, Thin Solid Films and IEEE Journal of Selected Topics in Quantum Electronics.

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