I. P. Soshnikov

470 citations

35 papers · 307 indexed · h-index 9

Co-authors: V. M. Ustinov N. N. Ledentsov D. Bimberg Maria Stepanova S. K. Dew G. É. Cirlin N. A. Maleev A. F. Tsatsul’nikov
Topics: Nanowire Synthesis and Applications (14 papers)Semiconductor Quantum Structures and Devices (13 papers)Advancements in Semiconductor Devices and Circuit Design (8 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Physical review. B, Condensed matter Applied Physics Letters Journal of Physics D Applied Physics
Partner nations: Russia Germany France

In The Last Decade

I. P. Soshnikov

32 papers receiving 299 citations

Peers

Countries citing papers authored by I. P. Soshnikov

Since Specialization

Citations

This map shows the geographic impact of I. P. Soshnikov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. P. Soshnikov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. P. Soshnikov more than expected).

Fields of papers citing papers by I. P. Soshnikov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. P. Soshnikov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. P. Soshnikov. The network helps show where I. P. Soshnikov may publish in the future.

Co-authorship network of co-authors of I. P. Soshnikov

This figure shows the co-authorship network connecting the top 25 collaborators of I. P. Soshnikov. A scholar is included among the top collaborators of I. P. Soshnikov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. P. Soshnikov. I. P. Soshnikov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Photovoltaic properties of InP NWs/p-Si heterostructure 2019 ·Journal of Physics Conference Series ·K. P. Kotlyar,(unknown),R. R. Reznik,(unknown),(unknown),(unknown),А М Можаров,(unknown),Ivan S. Mukhin,I. P. Soshnikov,G. É. Cirlin	1
2	InGaN/GaN QDs nanorods for light emitters: Processing and properties 2019 ·AIP conference proceedings ·K. P. Kotlyar,I. A. Morozov,(unknown),(unknown),(unknown),N. V. Kryzhanovskaya,(unknown),(unknown),А. В. Нащекин,I. P. Soshnikov,G. É. Cirlin	1
3	MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates 2018 ·Semiconductors ·R. R. Reznik,K. P. Kotlyar,I. P. Soshnikov,С. А. Кукушкін,А. В. Осипов,G. É. Cirlin	1
4	AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates 2017 ·Journal of Physics D Applied Physics ·G. É. Cirlin,R. R. Reznik,I. V. Shtrom,А. И. Хребтов,I. P. Soshnikov,С. А. Кукушкін,(unknown),Takeshi Kasama,N. Akopian	21
5	InGaN/GaN heterostructures with lateral confinement for light emitting diodes 2016 ·Journal of Physics Conference Series ·K. P. Kotlyar,(unknown),I. A. Morozov,(unknown),(unknown),В.В. Лысак,I. P. Soshnikov	1
6	Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate 2016 ·Thin Solid Films ·В. Н. Бессолов,(unknown),E. V. Konenkova,A. A. Lipovskiĭ,А. В. Осипов,A. V. Redkov,I. P. Soshnikov,С. А. Кукушкін	8
7	Fabrication of ordered GaAs nanowhiskers using electron-beam lithography 2011 ·Semiconductors ·I. P. Soshnikov,(unknown),G. É. Cirlin,(unknown),(unknown),Yu. B. Samsonenko,(unknown),А. И. Хребтов,V. M. Ustinov	1
8	Terahertz electroluminescence of surface plasmons from nanostructured InN layers 2010 ·Applied Physics Letters ·T. V. Shubina,A. V. Andrianov,(unknown),V. N. Jmerik,I. P. Soshnikov,(unknown),(unknown),P. S. Kop’ev,Sergei Ivanov,V. A. Shalygin,A. N. Sofronov,D. A. Firsov,L. E. Vorob’ev,N. A. Gippius,J. Leymarie,Xinqiang Wang,Akihiko Yoshikawa	12
9	Effect of growth atmosphere on the temperature profile along a nanowhisker 2008 ·Technical Physics Letters ·(unknown),Ilya A. Fedorov,N. V. Sibirev,I. P. Soshnikov,В. Г. Дубровский	2
10	Effect of deposition conditions on nanowhisker morphology 2007 ·Semiconductors ·В. Г. Дубровский,I. P. Soshnikov,N. V. Sibirev,G. É. Cirlin,V. M. Ustinov,Maria Tchernycheva,Jean‐Christophe Harmand	5
11	Influence of MBE growth conditions on the surface morphology of Al(Ga)As nanowhiskers 2006 ·physica status solidi (a) ·A. A. Tonkikh,G. É. Cirlin,В. Г. Дубровский,N. V. Sibirev,I. P. Soshnikov,Yu. B. Samsonenko,(unknown),V. M. Ustinov	5
12	GaAs Nanowhisker Arrays Grown by Magnetron Sputter Deposition 2005 ·Technical Physics Letters ·I. P. Soshnikov	4
13	Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization 2004 ·Semiconductor Science and Technology ·I. P. Soshnikov,A. R. Kovsh,V. M. Ustinov,N. V. Kryzhanovskaya,N. N. Ledentsov,D. Bimberg,Holm Kirmse,Wolfgang Neumann,(unknown),Gray Lin,(unknown),(unknown),Sien Chi	1
14	Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique 2004 ·Semiconductors ·A. A. Tonkikh,G. É. Cirlin,Yu. B. Samsonenko,I. P. Soshnikov,V. M. Ustinov	6
15	Sputtering from ion-beam-roughened Cu surfaces 2002 ·Physical review. B, Condensed matter ·Maria Stepanova,S. K. Dew,I. P. Soshnikov	26
16	<title>MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates</title> 2002 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·N. A. Maleev,A. R. Kovsh,A. E. Zhukov,S. S. Mikhrin,А. В. Васильев,Elizaveta Semenova,Yuri M. Shernyakov,E. V. Nikitina,(unknown),D. S. Sizov,I. P. Soshnikov,M. V. Maximov,N. N. Ledentsov,V. M. Ustinov,D. Bimberg,Жорес Иванович Алферов	0
17	<title>Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in optoelectronics</title> 2002 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·N. N. Ledentsov,D. Litvinov,Dagmar Gerthsen,(unknown),В. В. Болотов,B. R. Semyagin,V. A. Shchukin,I. P. Soshnikov,V. M. Ustinov,D. Bimberg	4
18	Application of fullerene C 60 thin films as an electron-beam resist for micro- and nanolithography 1998 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown),Lolita Rotkina,(unknown),(unknown),I. P. Soshnikov	1
19	Sputtering of III–V semiconductors under argon atom and ion bombardment 1997 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·I. P. Soshnikov,Yu. Kudriavtsev,A. V. Lunev,Н. А. Берт	11
20	Influence of volume binding on the threshold energies for sputtering cascades from solids 1996 ·Technical Physics ·I. P. Soshnikov,Н. А. Берт	0

About I. P. Soshnikov

I. P. Soshnikov is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 35 papers that have together received 307 indexed citations. Recurring topics across this work include Nanowire Synthesis and Applications (14 papers), Semiconductor Quantum Structures and Devices (13 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (200 citations), Electrical and Electronic Engineering (218 citations) and Condensed Matter Physics (44 citations). I. P. Soshnikov has collaborated with scholars based in Russia, Germany and France. Frequent co-authors include V. M. Ustinov, N. N. Ledentsov, D. Bimberg, Maria Stepanova, S. K. Dew, G. É. Cirlin, N. A. Maleev, A. F. Tsatsul’nikov, M. V. Maximov and S. S. Mikhrin. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Physics D Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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