J. Leymarie

2.1k total citations
93 papers, 1.6k citations indexed

About

J. Leymarie is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, J. Leymarie has authored 93 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Atomic and Molecular Physics, and Optics, 40 papers in Condensed Matter Physics and 33 papers in Electrical and Electronic Engineering. Recurrent topics in J. Leymarie's work include Semiconductor Quantum Structures and Devices (52 papers), GaN-based semiconductor devices and materials (40 papers) and Strong Light-Matter Interactions (31 papers). J. Leymarie is often cited by papers focused on Semiconductor Quantum Structures and Devices (52 papers), GaN-based semiconductor devices and materials (40 papers) and Strong Light-Matter Interactions (31 papers). J. Leymarie collaborates with scholars based in France, Russia and United Kingdom. J. Leymarie's co-authors include A. Vasson, P. Disseix, M. Leroux, J. Massies, F. Sèmond, M. Mihailovic, François Réveret, N. Grandjean, J. Zúñiga‐Pérez and T. V. Shubina and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. Leymarie

92 papers receiving 1.6k citations

Peers

J. Leymarie
A. Vasson France
J. Leymarie
Citations per year, relative to J. Leymarie J. Leymarie (= 1×) peers A. Vasson

Countries citing papers authored by J. Leymarie

Since Specialization
Citations

This map shows the geographic impact of J. Leymarie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Leymarie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Leymarie more than expected).

Fields of papers citing papers by J. Leymarie

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Leymarie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Leymarie. The network helps show where J. Leymarie may publish in the future.

Co-authorship network of co-authors of J. Leymarie

This figure shows the co-authorship network connecting the top 25 collaborators of J. Leymarie. A scholar is included among the top collaborators of J. Leymarie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Leymarie. J. Leymarie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Réveret, François, Catherine Bougerol, C. Robert‐Goumet, et al.. (2019). Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process. Applied Surface Science. 495. 143586–143586. 9 indexed citations
2.
Réveret, François, Xavier Lafosse, G. Patriarche, et al.. (2016). High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx. Journal of Applied Physics. 120(9). 7 indexed citations
3.
Zúñiga‐Pérez, J., C. Deparis, François Réveret, et al.. (2016). Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder. Applied Physics Letters. 108(25). 11 indexed citations
4.
Li, Xiangyang, Suresh Sundaram, P. Disseix, et al.. (2015). AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm. Optical Materials Express. 5(2). 380–380. 28 indexed citations
5.
Réveret, François, P. Disseix, J. Leymarie, et al.. (2012). Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon. Superlattices and Microstructures. 52(3). 541–551. 5 indexed citations
6.
Shubina, T. V., M. M. Glazov, N. A. Gippius, et al.. (2011). Delay and distortion of slow light pulses by excitons in ZnO. Physical Review B. 84(7). 13 indexed citations
7.
Lanty, Gaëtan, Sanjun Zhang, Jean‐Sébastien Lauret, et al.. (2011). Hybrid cavity polaritons in a ZnO-perovskite microcavity. Physical Review B. 84(19). 37 indexed citations
8.
Lagarde, Delphine, J. Zúñiga‐Pérez, P. Disseix, et al.. (2010). Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities. Journal of Applied Physics. 108(4). 7 indexed citations
9.
Shubina, T. V., A. V. Andrianov, V. N. Jmerik, et al.. (2010). Terahertz electroluminescence of surface plasmons from nanostructured InN layers. Applied Physics Letters. 96(18). 12 indexed citations
10.
Réveret, François, P. Disseix, J. Leymarie, et al.. (2009). Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms. Solid State Communications. 150(1-2). 122–126. 5 indexed citations
11.
Shubina, T. V., M. M. Glazov, А. А. Торопов, et al.. (2008). Resonant Light Delay in GaN with Ballistic and Diffusive Propagation. Physical Review Letters. 100(8). 87402–87402. 22 indexed citations
12.
Réveret, François, P. Disseix, J. Leymarie, et al.. (2008). Influence of the mirrors on the strong coupling regime in planar GaN microcavities. Physical Review B. 77(19). 19 indexed citations
13.
Shubina, T. V., S. V. Ivanov, V. N. Jmerik, et al.. (2007). Inhomogeneous InGaN and InN with In-enriched Nanostructures. AIP conference proceedings. 893. 269–270. 5 indexed citations
14.
Sèmond, F., Ian R. Sellers, F. Natali, et al.. (2005). Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon. Applied Physics Letters. 87(2). 61 indexed citations
15.
Shubina, T. V., S. V. Ivanov, V. N. Jmerik, et al.. (2004). Mie Resonances, Infrared Emission, and the Band Gap of InN. Physical Review Letters. 92(11). 117407–117407. 164 indexed citations
16.
Disseix, P., et al.. (2004). Femtosecond time-resolved interferences of resonantly excited excitons in bulk GaN. Superlattices and Microstructures. 36(4-6). 607–614. 9 indexed citations
17.
Damilano, B., et al.. (2000). InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K. Applied Physics Letters. 77(9). 1268–1270. 63 indexed citations
18.
Malpuech, Guillaume, A. V. Kavokin, J. Leymarie, & A. Vasson. (1999). Indirect observation of single-exciton quantum beats in the time-resolved reflection of a single quantum well. Solid State Communications. 113(4). 185–188. 3 indexed citations
19.
Leroux, M., G. Neu, J. Leymarie, & P. Gibart. (1995). High-pressure photoluminescence of GaAs co-doped with Se and Ge. Semiconductor Science and Technology. 10(5). 672–676. 1 indexed citations
20.
Massies, J., C. Deparis, N. Grandjean, et al.. (1994). Monolayer thickness control of InxGa1−xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy. Applied Physics Letters. 64(12). 1523–1525. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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