A. V. Andrianov

1.0k total citations
107 papers, 700 citations indexed

About

A. V. Andrianov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. V. Andrianov has authored 107 papers receiving a total of 700 indexed citations (citations by other indexed papers that have themselves been cited), including 86 papers in Electrical and Electronic Engineering, 76 papers in Atomic and Molecular Physics, and Optics and 30 papers in Materials Chemistry. Recurrent topics in A. V. Andrianov's work include Semiconductor Quantum Structures and Devices (54 papers), Terahertz technology and applications (39 papers) and Silicon Nanostructures and Photoluminescence (20 papers). A. V. Andrianov is often cited by papers focused on Semiconductor Quantum Structures and Devices (54 papers), Terahertz technology and applications (39 papers) and Silicon Nanostructures and Photoluminescence (20 papers). A. V. Andrianov collaborates with scholars based in Russia, United Kingdom and Germany. A. V. Andrianov's co-authors include N. N. Zinov’ev, John Orton, C. T. Foxon, D. E. Lacklison, S. E. Hooper, I. Harrison, А. Н. Алешин, E.C. Larkins, D. Kovalev and T.S. Cheng and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. V. Andrianov

93 papers receiving 679 citations

Peers

A. V. Andrianov
Brianna Klein United States
Grace D. Metcalfe United States
Alon Vardi United States
Hongen Shen United States
A. V. Andrianov
Citations per year, relative to A. V. Andrianov A. V. Andrianov (= 1×) peers Miguel Montes Bajo

Countries citing papers authored by A. V. Andrianov

Since Specialization
Citations

This map shows the geographic impact of A. V. Andrianov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. V. Andrianov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. V. Andrianov more than expected).

Fields of papers citing papers by A. V. Andrianov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. V. Andrianov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. V. Andrianov. The network helps show where A. V. Andrianov may publish in the future.

Co-authorship network of co-authors of A. V. Andrianov

This figure shows the co-authorship network connecting the top 25 collaborators of A. V. Andrianov. A scholar is included among the top collaborators of A. V. Andrianov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. V. Andrianov. A. V. Andrianov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Andrianov, A. V., et al.. (2022). Generation of Terahertz Radiation under the Femtosecond Laser Excitation of a Multilayer Structure Based on a-Si:H/a-SiC:H/c-Si. Journal of Experimental and Theoretical Physics Letters. 116(12). 859–862. 1 indexed citations
2.
Andrianov, A. V., et al.. (2018). Intraexciton and Intracenter Terahertz Radiation from Doped Silicon under Interband Photoexcitation. Journal of Experimental and Theoretical Physics Letters. 107(9). 540–543.
4.
Andrianov, A. V., et al.. (2017). Terahertz Luminescence and Electrical Characteristics of SiC Structures with Natural Superlattice in Strong Electric Fields. Journal of Infrared Millimeter and Terahertz Waves. 38(12). 1530–1541.
5.
Andrianov, A. V., et al.. (2016). Terahertz emission from SiC natural superlattices in strong electrical field. Applied Physics Letters. 108(21). 2 indexed citations
6.
Andrianov, A. V., et al.. (2010). Terahertz impurity luminescence under the interband photoexcitation of semiconductors. Journal of Experimental and Theoretical Physics Letters. 91(2). 96–99. 24 indexed citations
7.
Andrianov, A. V., et al.. (2010). Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation. Applied Physics Letters. 96(21). 16 indexed citations
8.
Shubina, T. V., A. V. Andrianov, V. N. Jmerik, et al.. (2010). Terahertz electroluminescence of surface plasmons from nanostructured InN layers. Applied Physics Letters. 96(18). 12 indexed citations
9.
Firsov, D. A., L. E. Vorobjev, V. A. Shalygin, et al.. (2008). Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells. Bulletin of the Russian Academy of Sciences Physics. 72(2). 246–248. 1 indexed citations
10.
Firsov, D. A., L. E. Vorobjev, V. A. Shalygin, et al.. (2008). Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells. Bulletin of the Russian Academy of Sciences Physics. 72(2). 246–248. 1 indexed citations
11.
Shalygin, V. A., L. E. Vorobjev, D. A. Firsov, et al.. (2007). Terahertz luminescence in strained GaAsN:Be layers under strong electric fields. Applied Physics Letters. 90(16). 18 indexed citations
12.
Andrianov, A. V., С. В. Новиков, Ruidong Xia, et al.. (2003). Photoluminescence from self‐assembled GaAs inclusions embedded in a GaN host crystal. physica status solidi (b). 238(1). 204–212.
13.
Andrianov, A. V., John Orton, T.M. Benson, et al.. (2000). Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes. Journal of Applied Physics. 87(7). 3227–3233. 26 indexed citations
14.
Andrianov, A. V., et al.. (1998). Inelastic light scattering and X-ray diffraction from thick free-standing porous silicon films. Journal of Luminescence. 80(1-4). 193–198. 4 indexed citations
15.
Andrianov, A. V., et al.. (1996). Low-temperature luminescence study of GaN films grown by MBE. Semiconductor Science and Technology. 11(3). 366–371. 36 indexed citations
16.
Koch, F., Dmitry Kovalev, G. Polisski, & A. V. Andrianov. (1996). Light - stimulated anisotropy in porous silicon. Brazilian Journal of Physics. 26(1). 189–192. 4 indexed citations
17.
Андреев, А. А., et al.. (1996). Structure and Optical Properties of Hydrogenated Silicon Films Prepared by Plasma Enhanced Chemical Vapour Deposition. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 51-52. 249–254. 1 indexed citations
18.
Andrianov, A. V., et al.. (1994). Enhanced Raman scattering in porous silicon. Semiconductors. 28(12). 1213–1215. 4 indexed citations
19.
Andrianov, A. V., et al.. (1993). Polarized photoluminescence of porous silicon. Physics of the Solid State. 35(10). 1323–1326. 6 indexed citations
20.
Andrianov, A. V., et al.. (1993). Time-resolved photoluminescence of porous silicon. Semiconductors. 27(1). 71–73. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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