A. Hokazono

889 total citations
49 papers, 632 citations indexed

About

A. Hokazono is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Hokazono has authored 49 papers receiving a total of 632 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Hokazono's work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). A. Hokazono is often cited by papers focused on Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). A. Hokazono collaborates with scholars based in Japan, United States and Germany. A. Hokazono's co-authors include Hiroshi Kawarada, Y. Toyoshima, Shiro Takeno, Hiroshi Noda, H. Ishiuchi, Kazuo Tsugawa, Fumihiko Uesugi, K. Ishimaru, Sriram Balasubramanian and Chenming Hu and has published in prestigious journals such as Applied Physics Letters, Corrosion Science and Applied Surface Science.

In The Last Decade

A. Hokazono

49 papers receiving 603 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Hokazono Japan 14 478 287 113 108 94 49 632
Charbel S. Madi United States 11 470 1.0× 376 1.3× 72 0.6× 93 0.9× 50 0.5× 18 652
P. S. Plekhanov United States 10 262 0.5× 260 0.9× 180 1.6× 70 0.6× 50 0.5× 16 422
A. Battaglia Italy 13 507 1.1× 195 0.7× 114 1.0× 61 0.6× 18 0.2× 39 583
Kazuo Moriya Japan 9 211 0.4× 128 0.4× 81 0.7× 123 1.1× 47 0.5× 17 379
John Hostetler United States 11 196 0.4× 92 0.3× 94 0.8× 36 0.3× 79 0.8× 23 347
James W. McCamy United States 12 319 0.7× 316 1.1× 138 1.2× 61 0.6× 48 0.5× 26 511
Ryna B. Marinenko United States 9 97 0.2× 154 0.5× 35 0.3× 80 0.7× 55 0.6× 33 294
Vasily Cherepanov Germany 17 265 0.6× 312 1.1× 581 5.1× 177 1.6× 21 0.2× 45 752
C. Levade France 13 275 0.6× 167 0.6× 106 0.9× 81 0.8× 123 1.3× 41 450
F.‐G. Kirscht Germany 11 353 0.7× 210 0.7× 166 1.5× 186 1.7× 44 0.5× 42 499

Countries citing papers authored by A. Hokazono

Since Specialization
Citations

This map shows the geographic impact of A. Hokazono's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Hokazono with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Hokazono more than expected).

Fields of papers citing papers by A. Hokazono

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Hokazono. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Hokazono. The network helps show where A. Hokazono may publish in the future.

Co-authorship network of co-authors of A. Hokazono

This figure shows the co-authorship network connecting the top 25 collaborators of A. Hokazono. A scholar is included among the top collaborators of A. Hokazono based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Hokazono. A. Hokazono is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Navarro, D., et al.. (2023). Technology-Dependent Modeling of MOSFET Parasitic Capacitances for Circuit Simulation. 1–4. 1 indexed citations
2.
Adachi, K., et al.. (2016). Implementation of TFET SPICE Model for Ultra-Low Power Circuit Analysis. IEEE Journal of the Electron Devices Society. 4(5). 273–277. 21 indexed citations
3.
Kondo, Y., Masakazu Goto, Yukinori Morita, et al.. (2014). Novel Device Architecture Proposal of Source Junctionless Tunneling Field-Effect Transistor (SJL-TFET). 2 indexed citations
4.
Miyata, Toshio, et al.. (2013). Scaling Strategy for Low Power RF Applications with Multi Gate Oxide Dual Work function (DWF) MOSFETs Utilizing Self-Aligned Integration Scheme. Symposium on VLSI Technology. 113(172). 13–18. 1 indexed citations
5.
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Hokazono, A., et al.. (2011). 25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer). IEEE Transactions on Electron Devices. 58(5). 1302–1310. 7 indexed citations
7.
Uesugi, Fumihiko, A. Hokazono, & Shiro Takeno. (2011). Evaluation of two-dimensional strain distribution by STEM/NBD. Ultramicroscopy. 111(8). 995–998. 48 indexed citations
8.
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10.
Hokazono, A., K. Adachi, Hiroshi Itokawa, et al.. (2007). In-situ Doped Embedded-SiGe Source/Drain Technique for 32 nm-node pMOSFET. 1 indexed citations
11.
Inaba, S., K. Miyano, A. Hokazono, et al.. (2004). SODEL FET: Novel Channel and Source/Drain Profile Engineering Schemes by Selective Si Epitaxial Growth Technology. IEEE Transactions on Electron Devices. 51(9). 1401–1408. 3 indexed citations
12.
Ohuchi, K., K. Adachi, A. Hokazono, & Y. Toyoshima. (2002). S/D Engineering for Sub-100 nm MOSFET using Ultra Shallow Junction Formation Technique, Elevated S/D Structure and SALICIDE Technique. MRS Proceedings. 717. 5 indexed citations
13.
Ohuchi, K., K. Adachi, A. Hokazono, & Y. Toyoshima. (2002). Source/drain engineering for sub 100-nm technology node. 7–12. 10 indexed citations
14.
Hokazono, A., K. Ohuchi, K. Miyano, et al.. (2002). Source/drain engineering for sub-100 nm CMOS using selective epitaxial growth technique. 243–246. 21 indexed citations
15.
Ohuchi, K., K. Adachi, Atsushi Murakoshi, et al.. (2001). Ultrashallow Junction Formation for Sub-100 nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion. Japanese Journal of Applied Physics. 40(4S). 2701–2701. 3 indexed citations
16.
Tsugawa, Kazuo, et al.. (1999). High-preformance diamond surface-channel field-effect transistors and their operation mechanism. Diamond and Related Materials. 8(2-5). 927–933. 82 indexed citations
17.
Hokazono, A., et al.. (1999). Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond. Solid-State Electronics. 43(8). 1465–1471. 22 indexed citations
18.
Kawarada, Hiroshi, C. Wild, N. Herres, et al.. (1998). Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces. Applied Physics Letters. 72(15). 1878–1880. 13 indexed citations
19.
Noda, Hiroshi, A. Hokazono, & Hiroshi Kawarada. (1997). Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers. Diamond and Related Materials. 6(5-7). 865–868. 12 indexed citations
20.
Hokazono, A. & Hiroshi Kawarada. (1997). Enhancement/Depletion Surface Channel Field Effect Transistors of Diamond and Their Logic Circuits. Japanese Journal of Applied Physics. 36(12R). 7133–7133. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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