E. Morifuji

1.2k total citations
59 papers, 782 citations indexed

About

E. Morifuji is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, E. Morifuji has authored 59 papers receiving a total of 782 indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in E. Morifuji's work include Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). E. Morifuji is often cited by papers focused on Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). E. Morifuji collaborates with scholars based in Japan, United States and South Korea. E. Morifuji's co-authors include H.S. Momose, T. Ohguro, T. Yoshitomi, Hiroshi Iwai, Y. Katsumata, F. Matsuoka, T. Morimoto, Shigeru Yamada, Shôichi Matsuda and Takeshi Yoshida and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Solid-State Electronics.

In The Last Decade

E. Morifuji

52 papers receiving 743 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Morifuji Japan 15 771 87 62 46 25 59 782
T. Bucelot United States 14 336 0.4× 69 0.8× 40 0.6× 42 0.9× 25 1.0× 30 375
Narain Arora Germany 8 566 0.7× 41 0.5× 82 1.3× 23 0.5× 39 1.6× 15 579
Jeffrey B. Johnson United States 12 415 0.5× 41 0.5× 41 0.7× 32 0.7× 21 0.8× 49 431
S. Ramey United States 15 684 0.9× 115 1.3× 60 1.0× 44 1.0× 45 1.8× 50 732
M. Dehan Belgium 17 1.1k 1.4× 44 0.5× 159 2.6× 23 0.5× 19 0.8× 58 1.1k
J. Johnson United States 6 465 0.6× 72 0.8× 80 1.3× 16 0.3× 83 3.3× 17 510
Hamed F. Dadgour United States 14 663 0.9× 118 1.4× 131 2.1× 33 0.7× 47 1.9× 19 685
Jenn-Gang Chern United States 7 420 0.5× 45 0.5× 66 1.1× 23 0.5× 30 1.2× 13 436
N. Lindert United States 12 790 1.0× 45 0.5× 111 1.8× 46 1.0× 45 1.8× 16 823
N. Planes France 17 781 1.0× 49 0.6× 56 0.9× 51 1.1× 39 1.6× 56 804

Countries citing papers authored by E. Morifuji

Since Specialization
Citations

This map shows the geographic impact of E. Morifuji's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Morifuji with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Morifuji more than expected).

Fields of papers citing papers by E. Morifuji

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Morifuji. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Morifuji. The network helps show where E. Morifuji may publish in the future.

Co-authorship network of co-authors of E. Morifuji

This figure shows the co-authorship network connecting the top 25 collaborators of E. Morifuji. A scholar is included among the top collaborators of E. Morifuji based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Morifuji. E. Morifuji is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Morifuji, E., et al.. (2009). Layout Dependence Modeling for 45-nm CMOS With Stress-Enhanced Technique. IEEE Transactions on Electron Devices. 56(9). 1991–1998. 22 indexed citations
2.
Aikawa, H., et al.. (2009). Compact model for layout dependent variability. 1–4. 9 indexed citations
3.
Morifuji, E., et al.. (2009). Optimization of Stress Memorization Technique for 45 nm Complementary Metal–Oxide–Semiconductor Technology. Japanese Journal of Applied Physics. 48(3R). 31203–31203. 1 indexed citations
4.
Aikawa, H., E. Morifuji, Takeshi Sawada, et al.. (2008). Variability aware modeling and characterization in standard cell in 45 nm CMOS with stress enhancement technique. 90–91. 29 indexed citations
5.
Morifuji, E., Dinesh Patil, Mark Horowitz, & Yoshio Nishi. (2007). Power Optimization for SRAM and Its Scaling. IEEE Transactions on Electron Devices. 54(4). 715–722. 23 indexed citations
6.
Morifuji, E., M. Kanda, S. Aota, et al.. (2005). A 65nm low power cmos platform with 0.495μm/sub 2/ SRAM for digital processing and mobile applications. 216–217. 10 indexed citations
7.
Yoshitomi, T., T. Ohguro, E. Morifuji, et al.. (2003). High performance MIM capacitor for RF BiCMOS/CMOS LSIs. 133–136. 6 indexed citations
8.
Morifuji, E., Akio Ohishi, Kazuo Miyashita, et al.. (2003). An 80 nm dual-gate CMOS with shallow extensions formed after activation annealing and SALICIDE. 649–652.
9.
Ohguro, T., M. Saito, E. Morifuji, et al.. (2002). High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V. 83–86. 9 indexed citations
10.
Yoshitomi, T., Yohei Sugawara, E. Morifuji, et al.. (2002). On-chip spiral inductors with diffused shields using channel-stop implant. 540–543. 6 indexed citations
11.
Ohguro, T., Shin Nakamura, E. Morifuji, et al.. (2002). High performance RF characteristics of raised gate/source/drain CMOS with Co salicide. 136–137. 11 indexed citations
12.
Steyaert, Michiel, M. Borremans, Johan Janssens, et al.. (2002). A single-chip CMOS transceiver for DCS-1800 wireless communications. 48–49,. 45 indexed citations
13.
Toyoshima, Y., Kazuo Miyashita, E. Morifuji, Takashi Nakayama, & Hideaki� Yoshimura. (2000). In/Sb halo doping and replaced anneal sequence for 80 nm CMOS. 41–44.
14.
Dutton, R.W., Zhiping Yu, H.S. Momose, et al.. (2000). An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs. IEEE Transactions on Electron Devices. 47(12). 2410–2419. 52 indexed citations
15.
Shino, T., E. Morifuji, T. Ohguro, et al.. (1999). A 67 GHz fmax Lateral Bipolar Transistor with Co-silicided Base Electrode Structure on Thin Film SOI for RF Analog Applications. European Solid-State Device Research Conference. 1. 212–215. 2 indexed citations
16.
Goo, Jung-Suk, Chang-Hoon Choi, E. Morifuji, et al.. (1999). RF noise simulation for submicron MOSFET's based on hydrodynamic model. 153–154. 11 indexed citations
17.
Morifuji, E., H.S. Momose, T. Ohguro, et al.. (1999). Future perspective and scaling down roadmap for RF CMOS. 163–164. 76 indexed citations
18.
Ohguro, T., B. Evans, Hideo Mabuchi, et al.. (1999). Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS. 119–120. 12 indexed citations
19.
Iwai, Hiroshi, T. Ohguro, E. Morifuji, et al.. (1999). <title>Advanced rf CMOS technology</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3891. 10–19.
20.
Yoshitomi, T., T. Ohguro, E. Morifuji, et al.. (1999). A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation. Solid-State Electronics. 43(7). 1219–1224. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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