F. Matsuoka

1.0k total citations
49 papers, 526 citations indexed

About

F. Matsuoka is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Hardware and Architecture. According to data from OpenAlex, F. Matsuoka has authored 49 papers receiving a total of 526 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 4 papers in Electronic, Optical and Magnetic Materials and 3 papers in Hardware and Architecture. Recurrent topics in F. Matsuoka's work include Semiconductor materials and devices (43 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). F. Matsuoka is often cited by papers focused on Semiconductor materials and devices (43 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). F. Matsuoka collaborates with scholars based in Japan, United States and South Korea. F. Matsuoka's co-authors include Hiroshi Iwai, E. Morifuji, K. Maeguchi, Y. Toyoshima, M. Kinugawa, H. Hayashida, K. Kanzaki, Shigeru Yamada, T. Ohguro and Takeshi Yoshida and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Semiconductor Manufacturing and Symposium on VLSI Technology.

In The Last Decade

F. Matsuoka

45 papers receiving 491 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Matsuoka Japan 12 521 57 36 31 26 49 526
C. Caillat Belgium 11 359 0.7× 47 0.8× 18 0.5× 20 0.6× 18 0.7× 33 368
Toshihiro Sekigawa Japan 9 339 0.7× 34 0.6× 39 1.1× 31 1.0× 40 1.5× 48 353
J.T. Clemens United States 9 426 0.8× 55 1.0× 13 0.4× 15 0.5× 54 2.1× 31 454
M.F. Li Singapore 11 598 1.1× 69 1.2× 25 0.7× 29 0.9× 45 1.7× 20 612
Reza Arghavani United States 12 450 0.9× 60 1.1× 15 0.4× 27 0.9× 76 2.9× 30 479
L.R. Hite United States 10 488 0.9× 35 0.6× 30 0.8× 16 0.5× 36 1.4× 20 507
H. Ishiuchi Japan 16 594 1.1× 54 0.9× 28 0.8× 9 0.3× 94 3.6× 63 611
J.D. Hayden United States 9 318 0.6× 29 0.5× 13 0.4× 10 0.3× 19 0.7× 34 326
Juergen Boemmels Belgium 7 316 0.6× 17 0.3× 16 0.4× 46 1.5× 54 2.1× 28 351
F. Bénistant Singapore 10 260 0.5× 55 1.0× 10 0.3× 12 0.4× 37 1.4× 52 294

Countries citing papers authored by F. Matsuoka

Since Specialization
Citations

This map shows the geographic impact of F. Matsuoka's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Matsuoka with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Matsuoka more than expected).

Fields of papers citing papers by F. Matsuoka

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Matsuoka. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Matsuoka. The network helps show where F. Matsuoka may publish in the future.

Co-authorship network of co-authors of F. Matsuoka

This figure shows the co-authorship network connecting the top 25 collaborators of F. Matsuoka. A scholar is included among the top collaborators of F. Matsuoka based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Matsuoka. F. Matsuoka is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
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Aikawa, H., E. Morifuji, Takeshi Sawada, et al.. (2008). Variability aware modeling and characterization in standard cell in 45 nm CMOS with stress enhancement technique. 90–91. 29 indexed citations
3.
Fujii, Osamu, M. Tamura, Tomoya Sato, et al.. (2006). Sophisticated methodology of dummy pattern generation for suppressing dislocation induced contact misalignment on flash lamp annealed eSiGe wafer. Symposium on VLSI Technology. 156–157. 1 indexed citations
4.
Higashi, Katsumi, Norimasa Nakamura, N. Matsunaga, et al.. (2006). Mechanism of moisture uptake induced via failure and its impact on 45nm node interconnect design. 183–186. 6 indexed citations
5.
Morifuji, E., M. Kanda, S. Aota, et al.. (2005). A 65nm low power cmos platform with 0.495μm/sub 2/ SRAM for digital processing and mobile applications. 216–217. 10 indexed citations
6.
Matsuoka, F., et al.. (2005). Device Design Guidelines for FC-SGT DRAM Cells With High Soft-Error Immunity. IEEE Transactions on Electron Devices. 52(6). 1194–1199. 2 indexed citations
7.
Fukui, H., Hideaki� Yoshimura, H. Oyamatsu, et al.. (2005). Comprehensive study on layout dependence of soft errors in CMOS latch circuits and its scaling trend for 65 nm technology node and beyond. 40. 222–223. 6 indexed citations
8.
Yoshitomi, T., T. Ohguro, E. Morifuji, et al.. (2003). High performance MIM capacitor for RF BiCMOS/CMOS LSIs. 133–136. 6 indexed citations
9.
Ishimaru, K., et al.. (2002). Bipolar installed CMOS technology without any process step increase for high speed cache SRAM. 26. 673–676. 1 indexed citations
10.
Ishimaru, K., et al.. (2002). Anomalous hot-carrier induced degradation in very narrow channel nMOSFETs with STI structure. 881–884. 15 indexed citations
11.
Suzuki, Akira, Tsukasa Kobayashi, Atsushi Kawasumi, et al.. (2002). A 400 MHz 4.5 Mb synchronous BiCMOS SRAM with alternating bit-line loads. 146–147,. 2 indexed citations
12.
13.
14.
Morifuji, E., H.S. Momose, T. Ohguro, et al.. (1999). Future perspective and scaling down roadmap for RF CMOS. 163–164. 76 indexed citations
15.
Matsuoka, F., et al.. (1997). Dual-polycide gate technology using regrowth amorphous-Si to suppress lateral dopant diffusion. IEEE Transactions on Electron Devices. 44(9). 1460–1466. 4 indexed citations
16.
Matsuoka, F., et al.. (1996). Simple and quick turnaround time fabrication process for deep submicrometer CMOS generation. IEEE Transactions on Semiconductor Manufacturing. 9(4). 489–494. 2 indexed citations
17.
Matsuoka, F., et al.. (1990). Electromigration reliability for a tungsten-filled via hole structure. IEEE Transactions on Electron Devices. 37(3). 562–568. 19 indexed citations
18.
Matsuoka, F., et al.. (1990). Analysis of hot-carrier-induced degradation mode on pMOSFET's. IEEE Transactions on Electron Devices. 37(6). 1487–1495. 45 indexed citations
19.
Hiruta, Y., et al.. (1989). Interface state generation under long-term positive-bias temperature stress for a p/sup +/ poly gate MOS structure. IEEE Transactions on Electron Devices. 36(9). 1732–1739. 20 indexed citations
20.
Toyoshima, Y., F. Matsuoka, H. Hayashida, Hiroshi Iwai, & K. Kanzaki. (1988). Study on gate oxide thickness dependence of hot carrier induced degradation for n-MOSFETs.. Symposium on VLSI Technology. 39–40. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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