Bing‐Yue Tsui

2.1k total citations
178 papers, 1.6k citations indexed

About

Bing‐Yue Tsui is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Bing‐Yue Tsui has authored 178 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 168 papers in Electrical and Electronic Engineering, 60 papers in Atomic and Molecular Physics, and Optics and 25 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Bing‐Yue Tsui's work include Semiconductor materials and devices (132 papers), Advancements in Semiconductor Devices and Circuit Design (63 papers) and Semiconductor materials and interfaces (54 papers). Bing‐Yue Tsui is often cited by papers focused on Semiconductor materials and devices (132 papers), Advancements in Semiconductor Devices and Circuit Design (63 papers) and Semiconductor materials and interfaces (54 papers). Bing‐Yue Tsui collaborates with scholars based in Taiwan, United States and China. Bing‐Yue Tsui's co-authors include Chih‐Feng Huang, Peiyu Wang, Yi‐Hsuan Hsiao, C. C. Yang, Chao‐Hsin Chien, Hang-Ting Lue, Shyh-Dar Lee, Chih-Yuan Lu, Wei-Chen Chen and Hsiao‐Hsuan Hsu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Bing‐Yue Tsui

167 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bing‐Yue Tsui Taiwan 22 1.5k 422 339 188 158 178 1.6k
Thomas Frank Germany 15 982 0.7× 251 0.6× 276 0.8× 277 1.5× 232 1.5× 62 1.3k
K. Pressel Germany 23 1.2k 0.8× 416 1.0× 521 1.5× 152 0.8× 225 1.4× 113 1.6k
P. Arnett United States 17 764 0.5× 637 1.5× 288 0.8× 149 0.8× 189 1.2× 43 1.2k
Youngje Sung South Korea 27 2.1k 1.5× 363 0.9× 215 0.6× 267 1.4× 199 1.3× 145 2.6k
Shichang Zou China 23 1.6k 1.1× 530 1.3× 349 1.0× 209 1.1× 146 0.9× 174 1.9k
P. Fazan United States 17 1.2k 0.8× 188 0.4× 282 0.8× 186 1.0× 123 0.8× 115 1.3k
G. Reimbold France 22 2.1k 1.5× 275 0.7× 326 1.0× 258 1.4× 185 1.2× 214 2.2k
A. D. Kurtz United States 19 1.1k 0.7× 289 0.7× 523 1.5× 344 1.8× 75 0.5× 42 1.3k
Chenming Hu United States 22 1.9k 1.3× 242 0.6× 260 0.8× 254 1.4× 128 0.8× 64 2.0k
H. Reisinger Germany 31 4.1k 2.8× 448 1.1× 552 1.6× 163 0.9× 81 0.5× 136 4.3k

Countries citing papers authored by Bing‐Yue Tsui

Since Specialization
Citations

This map shows the geographic impact of Bing‐Yue Tsui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bing‐Yue Tsui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bing‐Yue Tsui more than expected).

Fields of papers citing papers by Bing‐Yue Tsui

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bing‐Yue Tsui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bing‐Yue Tsui. The network helps show where Bing‐Yue Tsui may publish in the future.

Co-authorship network of co-authors of Bing‐Yue Tsui

This figure shows the co-authorship network connecting the top 25 collaborators of Bing‐Yue Tsui. A scholar is included among the top collaborators of Bing‐Yue Tsui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bing‐Yue Tsui. Bing‐Yue Tsui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsui, Bing‐Yue, et al.. (2025). Impact of near interface defects on NO annealed SiC MOSFET mobility. Microelectronics Reliability. 173. 115841–115841. 1 indexed citations
2.
Tsui, Bing‐Yue, et al.. (2024). A Recessed Source Contact Technology to Reduce the Specific On-Resistance of Power MOSFET on 4H-SiC. IEEE Electron Device Letters. 45(10). 1930–1932.
3.
Tu, Chang‐Ching, Kuo‐Bin Hong, Yu‐Sheng Hsiao, et al.. (2024). Industry perspective on power electronics for electric vehicles. 1(7). 435–452. 26 indexed citations
4.
5.
Tsui, Bing‐Yue, et al.. (2023). Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area. IEEE Electron Device Letters. 44(9). 1539–1542. 3 indexed citations
6.
Tsui, Bing‐Yue, et al.. (2022). Design, Process, and Characterization of Complementary Metal–Oxide–Semiconductor Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC. ECS Journal of Solid State Science and Technology. 11(4). 45001–45001. 7 indexed citations
7.
Chen, Po‐Chih, Wen‐Chien Miao, Tanveer Ahmed, et al.. (2022). Defect Inspection Techniques in SiC. Nanoscale Research Letters. 17(1). 30–30. 50 indexed citations
8.
Tsui, Bing‐Yue, et al.. (2022). Device isolation process for 4H-SiC CMOS ICs. 238–240. 2 indexed citations
9.
Wang, Peiyu, et al.. (2020). Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 6(2). 130–137. 4 indexed citations
10.
Tsui, Bing‐Yue, et al.. (2020). Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes. Sensors. 20(2). 436–436. 25 indexed citations
11.
Tsui, Bing‐Yue, et al.. (2017). Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation. IEEE Electron Device Letters. 38(6). 798–801. 14 indexed citations
12.
Tsui, Bing‐Yue, et al.. (2017). A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient. Japanese Journal of Applied Physics. 56(4S). 04CR02–04CR02. 3 indexed citations
13.
Wang, Peiyu & Bing‐Yue Tsui. (2015). A Novel Approach Using Discrete Grain-Boundary Traps to Study the Variability of 3-D Vertical-Gate NAND Flash Memory Cells. IEEE Transactions on Electron Devices. 62(8). 2488–2493. 21 indexed citations
14.
Hsiao, Yi‐Hsuan, Hang-Ting Lue, Wei-Chen Chen, et al.. (2015). Impact of ${\hbox{V}}_{\rm pass} $ Interference on Charge-Trapping NAND Flash Memory Devices. IEEE Transactions on Device and Materials Reliability. 15(2). 136–141. 10 indexed citations
15.
16.
Tsui, Bing‐Yue, et al.. (2005). Selectivity investigation of HfO/sub 2/ to oxide using wet etching. 87–90. 2 indexed citations
17.
Tsui, Bing‐Yue, et al.. (2005). Hot-carrier effects in P-channel modified Schottky-barrier FinFETs. IEEE Electron Device Letters. 26(6). 394–396. 18 indexed citations
18.
Tsui, Bing‐Yue, et al.. (2003). Formation of interfacial layer during reactive sputtering of hafnium oxide. Journal of Applied Physics. 93(12). 10119–10124. 43 indexed citations
19.
Tsui, Bing‐Yue, et al.. (2001). Electrical instability of low-dielectric constant diffusion barrier film (a-SiC:H) for copper interconnect. IEEE Transactions on Electron Devices. 48(10). 2375–2383. 30 indexed citations
20.
Tsui, Bing‐Yue, et al.. (1995). Recovery phenomenon and local field sensitivity on wafer charge-up effect of magnetically enhanced reactive ion etch system. IEEE Electron Device Letters. 16(2). 64–66. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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