Countries citing papers authored by M. Miura–Mattausch
Since
Specialization
Citations
This map shows the geographic impact of M. Miura–Mattausch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Miura–Mattausch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Miura–Mattausch more than expected).
Fields of papers citing papers by M. Miura–Mattausch
This network shows the impact of papers produced by M. Miura–Mattausch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Miura–Mattausch. The network helps show where M. Miura–Mattausch may publish in the future.
Co-authorship network of co-authors of M. Miura–Mattausch
This figure shows the co-authorship network connecting the top 25 collaborators of M. Miura–Mattausch.
A scholar is included among the top collaborators of M. Miura–Mattausch based on the total number of
citations received by their joint publications. Widths of edges
represent the number of papers authors have co-authored together.
Node borders
signify the number of papers an author published with M. Miura–Mattausch. M. Miura–Mattausch is excluded from
the visualization to improve readability, since they are connected to all nodes in the network.
Mattausch, Hans Jürgen, et al.. (2014). Modeling of Short-Channel Effect for Ultra-Thin SOI MOSFET on Ultra-Thin BOX. TechConnect Briefs. 2(2014). 471–474.1 indexed citations
5.
Feldmann, Uwe, T. Iizuka, Hideyuki Kikuchihara, et al.. (2012). HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX. TechConnect Briefs. 2(2012). 792–795.2 indexed citations
6.
Baba, Sotaro, Uwe Feldmann, Hans Jürgen Mattausch, et al.. (2012). Modeling of Chain History Effect based on HiSIM-SOI. TechConnect Briefs. 2(2012). 788–791.2 indexed citations
7.
Mattausch, Hans Jürgen, et al.. (2009). The surface-potential-based compact model HiSIM-SOI for Silicon-On-Insulator MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 77–81.2 indexed citations
8.
Sadachika, N., et al.. (2008). HiSIM-LDMOS/HV: A Complete Surface-Potential-Based MOSFET Model for High Voltage Applications. TechConnect Briefs. 3(2008). 893–896.5 indexed citations
9.
Mattausch, Hans Jürgen, M. Miura–Mattausch, N. Sadachika, M. Miyake, & D. Navarro. (2008). The HiSIM compact model family for integrated devices containing a surface-potential MOSFET core. International Conference Mixed Design of Integrated Circuits and Systems. 39–50.5 indexed citations
Ezaki, T., Tetsuya Iizuka, K. Matsumoto, et al.. (2007). HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications. TechConnect Briefs. 3(2007). 621–624.1 indexed citations
12.
Itoh, Shintaro, Akihiro Kobayashi, H. Masuda, et al.. (2005). HiSIM: Accurate Charge Modeling Important for RF Era. TechConnect Briefs. 303–306.2 indexed citations
13.
Miura–Mattausch, M., et al.. (2004). MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design. JSTS Journal of Semiconductor Technology and Science. 4(3). 133–140.5 indexed citations
14.
Miura–Mattausch, M., et al.. (2003). Gate Current Partitioning in MOSFET Models for Circuit Simulation. TechConnect Briefs. 2(2003). 322–325.4 indexed citations
15.
Miura–Mattausch, M., et al.. (2003). 100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions. IEICE Transactions on Electronics. 86(6). 1009–1021.11 indexed citations
16.
Kumashiro, S., M. Miura–Mattausch, N. Nakayama, et al.. (2002). HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies. TechConnect Briefs. 1(2002). 678–681.2 indexed citations
17.
Hänsch, W., et al.. (1999). Channel Engineering for the Reduction of Random-Dopant Placement-Induced Threshold Voltage Fluctuations in Vertical sub-100nm MOSFETs. European Solid-State Device Research Conference. 1. 408–411.1 indexed citations
Miura–Mattausch, M. & Ulrich Weinert. (1992). Unified MOSFET Model for All Channel Lengths down to Quarter Micron. IEICE Transactions on Electronics. 75(2). 172–180.2 indexed citations
20.
Miura–Mattausch, M.. (1987). Current Gain Dependence on the Emitter Size of Polysilicon-Emitter Bipolar Transistor. European Solid-State Device Research Conference. 909–912.
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