M. Miura–Mattausch
- Electrical and Electronic Engineering top 2%
- Atomic and Molecular Physics, and Optics top 10%
- Biomedical Engineering
- Condensed Matter Physics top 10%
- Materials Chemistry
- Co-authors
- Hans Jürgen MattauschW. HänschHideyuki KikuchiharaD. NavarroUwe FeldmannN. SadachikaM. MiyakeT. Iizuka
- Topics
- Advancements in Semiconductor Devices and Circuit Design (160 papers)Semiconductor materials and devices (138 papers)Silicon Carbide Semiconductor Technologies (102 papers)
- Partner nations
- JapanGermanyUnited States
In The Last Decade
M. Miura–Mattausch
205 papers receiving 1.7k citations
Peers
Comparison fields: 5 of 60
- Electrical and Electronic Engineering 1.6k
- Atomic and Molecular Physics, and Optics 171
- Biomedical Engineering 164
- Condensed Matter Physics 84
- Materials Chemistry 76
Countries citing papers authored by M. Miura–Mattausch
This map shows the geographic impact of M. Miura–Mattausch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Miura–Mattausch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Miura–Mattausch more than expected).
Fields of papers citing papers by M. Miura–Mattausch
This network shows the impact of papers produced by M. Miura–Mattausch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Miura–Mattausch. The network helps show where M. Miura–Mattausch may publish in the future.
Co-authorship network of co-authors of M. Miura–Mattausch
This figure shows the co-authorship network connecting the top 25 collaborators of M. Miura–Mattausch. A scholar is included among the top collaborators of M. Miura–Mattausch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Miura–Mattausch. M. Miura–Mattausch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 0 | |
| 3 | 1 | |
| 4 | Modeling of Short-Channel Effect for Ultra-Thin SOI MOSFET on Ultra-Thin BOX | 1 |
| 5 | HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX | 2 |
| 6 | Modeling of Chain History Effect based on HiSIM-SOI | 2 |
| 7 | The surface-potential-based compact model HiSIM-SOI for Silicon-On-Insulator MOSFETs | 2 |
| 8 | HiSIM-LDMOS/HV: A Complete Surface-Potential-Based MOSFET Model for High Voltage Applications | 5 |
| 9 | The HiSIM compact model family for integrated devices containing a surface-potential MOSFET core | 5 |
| 10 | 3 | |
| 11 | HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications | 1 |
| 12 | HiSIM: Accurate Charge Modeling Important for RF Era | 2 |
| 13 | MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design | 5 |
| 14 | 100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions | 11 |
| 15 | Gate Current Partitioning in MOSFET Models for Circuit Simulation | 4 |
| 16 | HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies | 2 |
| 17 | Channel Engineering for the Reduction of Random-Dopant Placement-Induced Threshold Voltage Fluctuations in Vertical sub-100nm MOSFETs | 1 |
| 18 | 2 | |
| 19 | Unified MOSFET Model for All Channel Lengths down to Quarter Micron | 2 |
| 20 | Current Gain Dependence on the Emitter Size of Polysilicon-Emitter Bipolar Transistor | 0 |
About M. Miura–Mattausch
M. Miura–Mattausch is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 221 papers that have together received 1.8k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (160 papers), Semiconductor materials and devices (138 papers) and Silicon Carbide Semiconductor Technologies (102 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Condensed Matter Physics (84 citations) and Hardware and Architecture (46 citations). M. Miura–Mattausch has collaborated with scholars based in Japan, Germany and United States. Frequent co-authors include Hans Jürgen Mattausch, W. Hänsch, Hideyuki Kikuchihara, D. Navarro, Uwe Feldmann, N. Sadachika, M. Miyake, T. Iizuka, S. Kumashiro and A. Rahm. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.