K. Irmscher

7.9k citations

150 papers · 6.5k indexed · 2 hit papers · h-index 38

Impact in

Electronic, Optical and Magnetic Materials top 0.2%
- Ga2O3 and related materials
Renewable Energy, Sustainability and the Environment top 0.5%
- Advanced Photocatalysis Techniques

Papers in

Electronic, Optical and Magnetic Materials 86
- Ga2O3 and related materials 69
Condensed Matter Physics 29
- GaN-based semiconductor devices and materials 25

Co-authors: Zbigniew Galazka Mike Pietsch R. Fornari Robert Schewski M. Albrecht Andreas Fiedler Detlef Klimm Matthias Bickermann
Journals: Applied Physics Letters (19 papers)Journal of Applied Physics (18 papers)Journal of Crystal Growth (13 papers)Physical review. B, Condensed matter (6 papers)physica status solidi (a) (6 papers)
Partner nations: Germany United States Sweden

In The Last Decade

K. Irmscher

148 papers receiving 6.3k citations

Hit Papers

align trajectories log scale

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs 2016 · 474 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2016 IEEE Electron Device Letters
2014 Journal of Crystal Growth

Peers

Countries citing papers authored by K. Irmscher

Since Specialization

Citations

This map shows the geographic impact of K. Irmscher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Irmscher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Irmscher more than expected).

Fields of papers citing papers by K. Irmscher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Irmscher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Irmscher. The network helps show where K. Irmscher may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K. Irmscher, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Irmscher Line = papers co-authored together K. Irmscher links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga₂O₃ Crystals Advanced Electronic Materials ·Libor Duzbaba, Joel B. Varley, Ymir Kalmann Frodason, Detlef Klimm, Lasse Vines, Zbigniew Galazka, Ta‐Shun Chou, Andreas Popp, K. Irmscher, Andreas Fiedler	2023	13
2	Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa2O4 Applied Physics Letters ·W. E. Murr, 张锋良, W Zhang, فارس سعود القاضي, Foyqa Ahmad, Muhammad Asif, Takahiro Takiguchi, 赵赛波, Rafał Korlacki, Zbigniew Galazka, K. Irmscher, M. Schubert	2022	7
3	Two inch diameter, highly conducting bulk β -Ga2O3 single crystals grown by the Czochralski method Applied Physics Letters ·Zbigniew Galazka, Steffen Ganschow, Libor Duzbaba, K. Irmscher, Mike Pietsch, Ta‐Shun Chou, Saud Bin Anooz, Roma Mickutė, Andreas Popp, Andrea Dittmar, Albert Kwasniewski, 皆子丸山, Detlef Klimm, Thomas L. Straubinger, Thomas Schroeder, Matthias Bickermann	2022	55
4	A consistent picture of excitations in cubic BaSnO3 revealed by combining theory and experiment Communications Materials ·И Г Кондратьева, Alberto Eljarrat, Dmitrii Nabok, K. Irmscher, أمل ابو زید, Zbigniew Galazka, M. Albrecht, Christoph T. Koch, Claudia Draxl	2022	13
5	Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect Physical review. B. ·S. Quinnell, John L. Lyons, Emerson Leonardo Monteiro, K. Irmscher, E. Richter, M. Weyers, Markus R. Wagner, Matthias Bickermann	2022	2
6	Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC Applied Physics Letters ·M. Schubert, Sean Knight, Steffen Richter, Philipp Kühne, V. Stanishev, Eduardo Corrêa Gomes, 赵赛波, Rafał Korlacki, K. Irmscher, Petr Neugebauer, Vanya Darakchieva	2022	13
7	Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films Applied Physics Letters ·Ta‐Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Natasha Dropka, Alix Maréchal, Diah Yulinar Muldiana, K. Irmscher, Libor Duzbaba, W. Miller, Zbigniew Galazka, M. Albrecht, Andreas Popp	2022	16
8	A carbon-doping related luminescence band in GaN revealed by below bandgap excitation Journal of Applied Physics ·徐泼, Jan Beyer, Franziska C. Beyer, Emerson Leonardo Monteiro, S. Quinnell, K. Irmscher, E. Richter, M. Weyers, J. Heitmann	2021	11
9	Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters Applied Physics Letters ·W. E. Murr, 赵赛波, Rafał Korlacki, W Zhang, Zbigniew Galazka, K. Irmscher, Stefan Zollner, M. Schubert	2021	9
10	The anisotropic quasi-static permittivity of single-crystal β -Ga2O3 measured by terahertz spectroscopy Applied Physics Letters ·S J Leinster, Sean Knight, Ashish Chanana, 赵赛波, Praneeth Ranga, Michael A. Scarpulla, Sriram Krishnamoorthy, Vanya Darakchieva, Zbigniew Galazka, K. Irmscher, Andreas Fiedler, Steve Blair, M. Schubert, Berardi Sensale‐Rodriguez	2020	40
11	Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE Applied Physics Letters ·Saud Bin Anooz, Raimund Grüneberg, Charlotte Wouters, Robert Schewski, M. Albrecht, Andreas Fiedler, K. Irmscher, Zbigniew Galazka, W. Miller, G. Wagner, Jutta Schwarzkopf, Andreas Popp	2020	86
12	Brillouin zone center phonon modes in ZnGa2O4 Applied Physics Letters ·赵赛波, Rafał Korlacki, Sean Knight, W. E. Murr, Zbigniew Galazka, K. Irmscher, Vanya Darakchieva, M. Schubert	2020	6
13	Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy Applied Physics Letters ·P. Schoeman, Daniel A. Hunter, Mike Pietsch, Luca Sulmoni, Anna S. Ratuski, Vitória Regina Lima do Nascimento, Norman Susilo, Abdulaziz Can, Johannes Enslin, K. Irmscher, Robert Martin, Tim Wernicke, Michael Kneissl	2020	16
14	Favourable growth conditions for the preparation of bulk AlN single crystals by PVT CrystEngComm ·C. Hartmann, Antonio Távora de Albuquerque e Silva, J. Wollweber, S. Quinnell, K. Irmscher, Matthias Bickermann, Thomas L. Straubinger	2020	36
15	Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy Journal of Applied Physics ·Saud Bin Anooz, Andreas Popp, Raimund Grüneberg, Charlotte Wouters, Robert Schewski, M. Schmidbauer, M. Albrecht, Andreas Fiedler, M. Ramsteiner, Detlef Klimm, K. Irmscher, Zbigniew Galazka, G. Wagner	2019	19
16	Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions Journal of Crystal Growth ·Zbigniew Galazka, K. Irmscher, Robert Schewski, I. Hanke, Mike Pietsch, Steffen Ganschow, Detlef Klimm, Andrea Dittmar, Andreas Fiedler, Thomas Schroeder, Matthias Bickermann	2019	106
17	Carbon pair defects in aluminum nitride Journal of Applied Physics ·S. Quinnell, C. Hartmann, J. Wollweber, Andrea Dittmar, Thomas L. Straubinger, Matthias Bickermann, Kayla Crossen, Holger Fritze, K. Irmscher	2019	13
18	Bulk β-Ga2O3 single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiation Journal of Alloys and Compounds ·Zbigniew Galazka, Robert Schewski, K. Irmscher, Winicjusz Drozdowski, Marcin E. Witkowski, Michał Makowski, A.J. Wojtowicz, I. Hanke, Mike Pietsch, Tobias Schulz, Detlef Klimm, Steffen Ganschow, Andrea Dittmar, Andreas Fiedler, Thomas Schroeder, Matthias Bickermann	2019	37
19	Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting APL Materials ·Robert Schewski, C. W. Bunn, Andreas Fiedler, Charlotte Wouters, Andreas Popp, Sergey V. Levchenko, Tobias Schulz, M. Schmidbauer, Saud Bin Anooz, Raimund Grüneberg, Zbigniew Galazka, G. Wagner, K. Irmscher, M. Scheffler, Claudia Draxl, M. Albrecht	2018	104
20	Growth, characterization, and properties of bulk SnO₂ single crystals physica status solidi (a) ·Zbigniew Galazka, Reinhard Uecker, Detlef Klimm, K. Irmscher, Mike Pietsch, Robert Schewski, M. Albrecht, Albert Kwasniewski, Steffen Ganschow, D. Schulz, Christo Guguschev, Rainer Bertram, Matthias Bickermann, R. Fornari	2013	49

About K. Irmscher

K. Irmscher is a scholar working on Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Materials Chemistry, Renewable Energy, Sustainability and the Environment and Electrical and Electronic Engineering, having authored 150 papers that have together received 6.5k indexed citations. Recurring topics across this work include Ga2O3 and related materials (69 papers), ZnO doping and properties (61 papers), Semiconductor materials and devices (28 papers), Electronic and Structural Properties of Oxides (25 papers), GaN-based semiconductor devices and materials (25 papers), Advanced Photocatalysis Techniques (25 papers), Silicon and Solar Cell Technologies (23 papers) and Semiconductor materials and interfaces (22 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (5.2k citations), Renewable Energy, Sustainability and the Environment (2.5k citations), Materials Chemistry (5.4k citations), Condensed Matter Physics (749 citations) and Electrical and Electronic Engineering (1.9k citations). K. Irmscher has collaborated with scholars based in Germany, United States and Sweden. Frequent co-authors include Zbigniew Galazka, Mike Pietsch, R. Fornari, Robert Schewski, M. Albrecht, Andreas Fiedler, Detlef Klimm, Matthias Bickermann, G. Wagner and R. Uecker. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, Physical review. B, Condensed matter and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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