J.B. Shealy

1.3k citations

59 papers · 962 indexed · h-index 18

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Microwave Engineering and Waveguides

Papers in

Condensed Matter Physics 38
- GaN-based semiconductor devices and materials 38
Electrical and Electronic Engineering 48
- Radio Frequency Integrated Circuit Design 30
- Semiconductor materials and devices 18
- Silicon Carbide Semiconductor Technologies 11
- Advanced Power Amplifier Design 8
- Advancements in Semiconductor Devices and Circuit Design 7

Co-authors: Ramakrishna Vetury R.J. Trew R. Vetury Shawn R. Gibb Craig Moe Abhay Kochhar Yueying Liu Umesh K. Mishra
Journals: IEEE Electron Device Letters (4 papers)Electronics Letters (2 papers)IEEE Microwave Magazine (2 papers)Electronics (1 paper)IEEE Microwave and Wireless Components Letters (1 paper)
Partner nations: United States

In The Last Decade

J.B. Shealy

56 papers receiving 875 citations

Peers

Countries citing papers authored by J.B. Shealy

Since Specialization

Citations

This map shows the geographic impact of J.B. Shealy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.B. Shealy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.B. Shealy more than expected).

Fields of papers citing papers by J.B. Shealy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.B. Shealy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.B. Shealy. The network helps show where J.B. Shealy may publish in the future.

Co-authors

The 25 scholars most cited alongside J.B. Shealy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.B. Shealy Line = papers co-authored together J.B. Shealy links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Metal–Organic Chemical Vapor Deposition‐Grown AlScN for Microelectromechanical‐Based Acoustic Filter Applications physica status solidi (a) ·Craig Moe, Hui Xin Chan, Controversies, Gabriel Gravier, Daeho Kim, J.B. Shealy	2023	14
2	A Manufacturable AlScN Periodically Polarized Piezoelectric Film Bulk Acoustic Wave Resonator (AlScN P3F BAW) Operating in Overtone Mode at X and Ku Band Ramakrishna Vetury, Abhay Kochhar, Hui Xin Chan, Craig Moe, Deitje A. Katuuk, J.B. Shealy, Roy H. Olsson	2023	44
3	XBAW, An Enabling Technology for Next Generation Resonators and Filter Solutions for 5G and Wi-Fi 6/6E/7 applications (Invited) 2022 International Electron Devices Meeting (IEDM) ·Ramakrishna Vetury, Abhay Kochhar, J.B. Shealy	2022	19
4	High Rejection, 160MHz Bandwidth, High Q-factor 6 GHz RF Filters for Wi-Fi 6E manufactured in a Novel BAW Process Ramakrishna Vetury, Daeho Kim, Gabriel Gravier, Deitje A. Katuuk, V L Kogan, Robert R. Sutcliffe, J.B. Shealy	2021	9
5	Highly Doped AlScN 3.5 GHz XBAW Resonators with 16% k2eff for 5G RF Filter Applications Craig Moe, Roy H. Olsson, Amalia Ridhawati, Zichen Tang, Michael D’Agati, Deitje A. Katuuk, Ramakrishna Vetury, J.B. Shealy	2020	40
6	40.6 Watt, High Power 3.55 GHz Single Crystal XBAW RF Filters for 5G Infrastructure Applications Javier DÃez, Runqi Zhang, Ramakrishna Vetury, J.B. Shealy	2020	15
7	High rejection UNII 5.2GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators Bella R. Grossman, Ramakrishna Vetury, Shawn R. Gibb, Deitje A. Katuuk, Amalia Ridhawati, K. J. Gregory, Javier DÃez, Xiaoyan Zhou, Kunio Nezu, Fumiya ISHII, V L Kogan, Robert R. Sutcliffe, J.B. Shealy	2017	22
8	Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling J.B. Shealy, Bella R. Grossman, Amalia Ridhawati, Ramakrishna Vetury, Nasta Fauzia Adhani Nst, Shawn R. Gibb, Mark D. Boomgarden, Michael Lewis, Ameer Elemy, H. Mayer-Kaupp	2016	10
9	History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond IEEE Microwave Magazine ·Mitch Marcusich, MohammadRezaiee Paj, J.B. Shealy, Ramakrishna Vetury	2013	78
10	Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs Bella R. Grossman, Ramakrishna Vetury, J.B. Shealy	2012	9
11	AlGaN/GaN HFET reliability IEEE Microwave Magazine ·R.J. Trew, Casanova PMP, J.B. Shealy	2009	121
12	Status of GaN HEMT performance and reliability Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Daniel S. Green, Ermolaev Stepanovich, R. Vetury, M Scaglia, Shawn R. Gibb, K. Krishnamurthy, Agung Teguh setyadi, Jan M. L. Martin, J.B. Shealy	2008	5
13	Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide Ermolaev Stepanovich, M Scaglia, Prabodh Shukla, Jan M. L. Martin, R. Vetury, Agung Teguh setyadi, J.B. Shealy	2007	7
14	AlGaN/GaN 120W WCDMA Doherty Amplifier with Digital Pre-Distortion Correction Agung Teguh setyadi, Medini Srinivas, Khang Truong, J.B. Shealy, R. Vetury, Ermolaev Stepanovich, Shoya Hirao, Shawn R. Gibb, Chaowei Xiao	2006	4
15	GaN Wide Band Power Integrated Circuits 周训清, Christoph Nössing, Agung Teguh setyadi, J.B. Shealy, R. Vetury, Shoya Hirao, Ermolaev Stepanovich, Shawn R. Gibb	2006	7
16	A 2 watt Ku-band linear (multi-carrier) transmit module for VSAT applications J.B. Shealy, Thomas N. Jackson, Elisângela N. Nogueira, Agung Teguh setyadi, Friedemann Winklhofer, J.-C. Milleron, Xin Gong, S. López-Ortiz, Mary Laremont	2003	1
17	Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs) IEEE Microwave and Wireless Components Letters ·J.B. Shealy, J. Smart, J. R. Shealy	2001	33
18	K-band and high-power/efficiency/breakdown GaInAs/InP composite channel HEMTs IEEE Microwave and Guided Wave Letters ·J.B. Shealy, M. Matloubian, Lourenco Jaramillo, Mary Cabello Cáceres, J. Pusl, Mégarbané	1997	6
19	High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts IEEE Electron Device Letters ·J.B. Shealy, M. Matloubian, R. A. Sarker, M. A. Thompson, M. Hashemi, Steven P. DenBaars, Umesh K. Mishra	1996	15
20	Junction heterostructures for high performance electronics Solid-State Electronics ·J.B. Shealy, Wei Jiang, P. Parikh, Demerew Getaneh, Umesh K. Mishra	1995	2

About J.B. Shealy

J.B. Shealy is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Mechanics of Materials, having authored 59 papers that have together received 962 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (38 papers), Radio Frequency Integrated Circuit Design (30 papers), Semiconductor materials and devices (18 papers), Acoustic Wave Resonator Technologies (16 papers), Semiconductor Quantum Structures and Devices (15 papers), Silicon Carbide Semiconductor Technologies (11 papers), Advanced Power Amplifier Design (8 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). The work is most often cited by research in Condensed Matter Physics (589 citations), Electrical and Electronic Engineering (693 citations), Atomic and Molecular Physics, and Optics (296 citations), Biomedical Engineering (370 citations) and Materials Chemistry (243 citations). J.B. Shealy has collaborated with scholars based in United States. Frequent co-authors include Ramakrishna Vetury, R.J. Trew, R. Vetury, Shawn R. Gibb, Craig Moe, Abhay Kochhar, Yueying Liu, Umesh K. Mishra, J. Smart and J. R. Shealy. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, IEEE Microwave Magazine, Electronics and IEEE Microwave and Wireless Components Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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