N. Dharmarasu

804 total citations
67 papers, 628 citations indexed

About

N. Dharmarasu is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Dharmarasu has authored 67 papers receiving a total of 628 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 35 papers in Condensed Matter Physics and 24 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Dharmarasu's work include GaN-based semiconductor devices and materials (35 papers), Ga2O3 and related materials (22 papers) and Semiconductor materials and devices (22 papers). N. Dharmarasu is often cited by papers focused on GaN-based semiconductor devices and materials (35 papers), Ga2O3 and related materials (22 papers) and Semiconductor materials and devices (22 papers). N. Dharmarasu collaborates with scholars based in Singapore, Japan and India. N. Dharmarasu's co-authors include K. Radhakrishnan, Masafumi Yamaguchi, S. Arulkumaran, Aurangzeb Khan, Sumio Matsuda, Mitsuru Imaizumi, Takeshi Ohshima, Hisayoshi Itoh, J. Kumar and Tatsuya Takamoto and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

N. Dharmarasu

63 papers receiving 612 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Dharmarasu Singapore 14 451 263 217 177 174 67 628
M. R. Gokhale India 15 283 0.6× 301 1.1× 317 1.5× 302 1.7× 182 1.0× 59 651
X. Weng United States 16 381 0.8× 310 1.2× 202 0.9× 338 1.9× 156 0.9× 32 712
D. S. Rawal India 15 474 1.1× 424 1.6× 169 0.8× 153 0.9× 164 0.9× 83 619
J. Woodward United States 12 182 0.4× 166 0.6× 129 0.6× 157 0.9× 132 0.8× 35 376
M. F. MacMillan United States 16 672 1.5× 155 0.6× 232 1.1× 182 1.0× 181 1.0× 50 813
H.‐H. Wehmann Germany 16 305 0.7× 299 1.1× 190 0.9× 369 2.1× 232 1.3× 44 653
П. С. Вергелес Russia 12 203 0.5× 285 1.1× 163 0.8× 224 1.3× 278 1.6× 50 515
U.H. Liaw Taiwan 9 229 0.5× 327 1.2× 149 0.7× 217 1.2× 174 1.0× 19 472
Fang-Yuh Lo Taiwan 16 266 0.6× 200 0.8× 379 1.7× 252 1.4× 217 1.2× 49 630
X.Z. Xu France 15 195 0.4× 206 0.8× 206 0.9× 273 1.5× 154 0.9× 35 533

Countries citing papers authored by N. Dharmarasu

Since Specialization
Citations

This map shows the geographic impact of N. Dharmarasu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Dharmarasu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Dharmarasu more than expected).

Fields of papers citing papers by N. Dharmarasu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Dharmarasu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Dharmarasu. The network helps show where N. Dharmarasu may publish in the future.

Co-authorship network of co-authors of N. Dharmarasu

This figure shows the co-authorship network connecting the top 25 collaborators of N. Dharmarasu. A scholar is included among the top collaborators of N. Dharmarasu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Dharmarasu. N. Dharmarasu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Alzakia, Fuad Indra, et al.. (2025). Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter. Applied Physics Letters. 126(17).
2.
Dharmarasu, N., et al.. (2024). Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy. Thin Solid Films. 808. 140572–140572.
3.
Dharmarasu, N., et al.. (2024). Investigation of deep trap states at the negative polarization interface of N-polar HEMT through capacitance–conductance measurements. Journal of Physics D Applied Physics. 58(9). 95101–95101.
4.
Dharmarasu, N., et al.. (2023). Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy. Journal of Physics D Applied Physics. 56(34). 345302–345302. 6 indexed citations
5.
Dharmarasu, N., et al.. (2023). Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures. Applied Physics Letters. 122(17). 1 indexed citations
6.
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9.
Radhakrishnan, K., et al.. (2019). AlGaN/GaN HEMT-based high-sensitive NO 2 gas sensors. Japanese Journal of Applied Physics. 58(SC). SCCD23–SCCD23. 15 indexed citations
10.
Radhakrishnan, K., et al.. (2015). Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy. Japanese Journal of Applied Physics. 54(6). 65701–65701. 8 indexed citations
11.
Dharmarasu, N., et al.. (2012). Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy. Applied Physics Express. 5(9). 91003–91003. 15 indexed citations
12.
Dharmarasu, N., et al.. (2011). Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA‐MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2075–2077. 4 indexed citations
13.
Irmer, S., et al.. (2006). Wide continuous tuning range of 221 nm by InP/air-gap vertical-cavity filters. Electronics Letters. 42(17). 974–975. 13 indexed citations
14.
Dharmarasu, N., et al.. (2006). Tailored Stress in InP/GaInAs Layers for InP/Air-Gap DBR-Filters with Photonic Crystals. 88–89. 1 indexed citations
15.
Dharmarasu, N. & Masafumi Yamaguchi. (2003). Analysis of radiation response of InGaP, InGaAsP, and InGaAs solar cells by displacement damage dose approach. 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of. 1. 730–733. 4 indexed citations
16.
Yamaguchi, Masafumi, Tatsuya Takamoto, Masahiro Adachi, et al.. (2003). Consideration for improving radiation-resistance of InGaP/GaAs and InGaP/X/Ge multi-junction solar cells. 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of. 1. 685–688. 1 indexed citations
17.
Yamaguchi, Masafumi, et al.. (2003). Consideration on unique radiation-tolerance properties of solar cells made with InP-family. 76. 792–795. 1 indexed citations
18.
Yamaguchi, Masafumi, et al.. (2001). Low energy ion implantation and high energy heavy ion irradiation in C60 films. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 178(1-4). 301–304. 7 indexed citations
19.
Dharmarasu, N., S. Arulkumaran, P. Jayavel, et al.. (1998). Investigations of the Electrical and Structural Characteristics of 50 MeV7Li Implanted SI-InP. physica status solidi (a). 167(1). 157–163. 1 indexed citations
20.
Dharmarasu, N., et al.. (1998). Improved electrical properties on the anodic oxide/InP interface for MOS structures. Journal of Electronic Materials. 27(12). 1358–1361. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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