Y. Dikme

525 total citations
44 papers, 431 citations indexed

About

Y. Dikme is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Y. Dikme has authored 44 papers receiving a total of 431 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Condensed Matter Physics, 20 papers in Electrical and Electronic Engineering and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Y. Dikme's work include GaN-based semiconductor devices and materials (42 papers), Semiconductor Quantum Structures and Devices (18 papers) and Ga2O3 and related materials (16 papers). Y. Dikme is often cited by papers focused on GaN-based semiconductor devices and materials (42 papers), Semiconductor Quantum Structures and Devices (18 papers) and Ga2O3 and related materials (16 papers). Y. Dikme collaborates with scholars based in Germany, Belarus and Singapore. Y. Dikme's co-authors include M. Heuken, H. Kalisch, Rolf A. Jansen, G. P. Yablonskii, Zabu Kyaw, Hilmi Volkan Demir, Xiao Wei Sun, Swee Tiam Tan, Kevin J. Chen and Kei May Lau and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Y. Dikme

42 papers receiving 421 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Dikme Germany 12 383 200 170 146 142 44 431
S. M. Donovan United States 13 453 1.2× 367 1.8× 174 1.0× 158 1.1× 100 0.7× 38 551
H. Behmenburg Germany 13 398 1.0× 207 1.0× 219 1.3× 145 1.0× 104 0.7× 37 443
M. Hansen United States 10 372 1.0× 207 1.0× 145 0.9× 116 0.8× 159 1.1× 14 408
B. Reuters Germany 13 423 1.1× 229 1.1× 215 1.3× 130 0.9× 124 0.9× 30 451
C. J. Pan Taiwan 13 293 0.8× 196 1.0× 220 1.3× 255 1.7× 62 0.4× 26 428
Chi-Chih Liao Taiwan 10 232 0.6× 233 1.2× 106 0.6× 158 1.1× 143 1.0× 28 437
B. Monemar Sweden 10 385 1.0× 154 0.8× 220 1.3× 249 1.7× 172 1.2× 27 494
Yung-Chen Cheng Taiwan 7 389 1.0× 114 0.6× 174 1.0× 225 1.5× 203 1.4× 17 460
Shih-Wei Feng Taiwan 10 372 1.0× 105 0.5× 161 0.9× 224 1.5× 187 1.3× 15 446

Countries citing papers authored by Y. Dikme

Since Specialization
Citations

This map shows the geographic impact of Y. Dikme's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Dikme with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Dikme more than expected).

Fields of papers citing papers by Y. Dikme

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Dikme. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Dikme. The network helps show where Y. Dikme may publish in the future.

Co-authorship network of co-authors of Y. Dikme

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Dikme. A scholar is included among the top collaborators of Y. Dikme based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Dikme. Y. Dikme is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Arulkumaran, S., et al.. (2020). Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate. Electronics. 9(11). 1858–1858. 8 indexed citations
2.
Bhat, Thirumaleshwara N., Surani Bin Dolmanan, Y. Dikme, et al.. (2014). Structural and optical properties of AlxGa1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(2). 12 indexed citations
3.
Ju, Zhenghua, Swee Tiam Tan, Yinlin Ji, et al.. (2012). On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer. Applied Physics Letters. 100(12). 32 indexed citations
4.
Behmenburg, H., Ten‐Chin Wen, Y. Dikme, et al.. (2008). Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates. Journal of Crystal Growth. 310(23). 4976–4978. 4 indexed citations
5.
Zubialevich, Vitaly Z., E. V. Lutsenko, G. P. Yablonskii, et al.. (2008). Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates. Journal of Applied Spectroscopy. 75(1). 96–103. 2 indexed citations
6.
Lutsenko, E. V., Andrei Andryieuski, G. P. Yablonskii, et al.. (2008). Laser threshold and optical gain of blue optically pumped InGaN/GaN multiple quantum wells (MQW) grown on Si. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2263–2266. 5 indexed citations
7.
Yablonskii, G. P., H. Kalisch, Rolf A. Jansen, et al.. (2007). Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates. Superlattices and Microstructures. 41(5-6). 400–406. 4 indexed citations
8.
Chou, Mitch M. C., Da‐Ren Hang, H. Kalisch, et al.. (2007). Crystal growth and properties of LiAlO2 and nonpolar GaN on LiAlO2 substrate. Journal of Applied Physics. 101(10). 33 indexed citations
9.
Dikme, Y. & M. Heuken. (2006). MOVPE and characterization of GaN-based structures on alternative substrates. RWTH Publications (RWTH Aachen).
10.
Lutsenko, E. V., Vitaly Z. Zubialevich, T. Malinauskas, et al.. (2006). Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE. physica status solidi (a). 203(7). 1759–1763. 2 indexed citations
11.
Hardtdegen, H., N. Kaluza, Zdeněk Sofer, et al.. (2006). New method for the in situ determination of AlxGa1–xN composition in MOVPE by real‐time optical reflectance. physica status solidi (a). 203(7). 1645–1649. 2 indexed citations
12.
Lutsenko, E. V., Vitaly Z. Zubialevich, G. P. Yablonskii, et al.. (2005). Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time‐resolved four‐wave mixing technique. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2724–2727. 6 indexed citations
13.
Dikme, Y., H. Kalisch, C. Richtarch, et al.. (2005). Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2607–2610. 8 indexed citations
14.
Kuzmı́k, J., M. Blaho, D. Pogány, et al.. (2004). Backgating, high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates. Open Repository and Bibliography (University of Luxembourg). 39. 319–322. 4 indexed citations
15.
Dikme, Y., Shujing Jia, Kevin J. Chen, et al.. (2004). Characterization of GaN grown on patterned Si(111) substrates. Journal of Crystal Growth. 272(1-4). 489–495. 6 indexed citations
16.
Sedova, I. V., S. V. Sorokin, А. А. Торопов, et al.. (2004). Integration of Cd(Zn)Se/ZnSe and GaN‐based lasers for optoelectronic applications in a green spectral range. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(4). 1030–1033. 3 indexed citations
17.
Marso, M., P. Javorka, Y. Dikme, et al.. (2003). Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate. physica status solidi (a). 200(1). 179–182. 6 indexed citations
18.
Dikme, Y., H. Kalisch, J. Woitok, et al.. (2003). Si(111) as alternative substrate for AlGaN/GaN HEMT. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2385–2388. 4 indexed citations
19.
Kalisch, H., Y. Dikme, A. Alam, et al.. (2002). Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates. physica status solidi (a). 194(2). 464–467. 3 indexed citations
20.
Yablonskii, G. P., E. V. Lutsenko, Vitaly Z. Zubialevich, et al.. (2002). Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures. physica status solidi (a). 192(1). 54–59. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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