S. C. Foo

448 citations

11 papers · 369 indexed · h-index 9

Co-authors: Geok Ing Ng S. Arulkumaran Y. K. T. Maung S. Vicknesh Kian Siong Ang Zhihong LiuTao XuYu Li
Topics: GaN-based semiconductor devices and materials (11 papers)Semiconductor materials and devices (9 papers)Ga2O3 and related materials (6 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters IEEE Transactions on Electron Devices Japanese Journal of Applied Physics
Partner nations: Singapore United States Japan

In The Last Decade

S. C. Foo

11 papers receiving 352 citations

Peers

Countries citing papers authored by S. C. Foo

Since Specialization

Citations

This map shows the geographic impact of S. C. Foo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. C. Foo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. C. Foo more than expected).

Fields of papers citing papers by S. C. Foo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. C. Foo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. C. Foo. The network helps show where S. C. Foo may publish in the future.

Co-authorship network of co-authors of S. C. Foo

This figure shows the co-authorship network connecting the top 25 collaborators of S. C. Foo. A scholar is included among the top collaborators of S. C. Foo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. C. Foo. S. C. Foo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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11 of 11 papers shown

#	Work	Indexed citations
1	Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation 2019 ·Kumud Ranjan,Geok Ing Ng,S. Arulkumaran,S. Vicknesh,S. C. Foo	3
2	Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation 2016 ·Microelectronics Reliability ·(unknown),Wardhana Aji Sasangka,Riko I Made,S. Arulkumaran,Geok Ing Ng,S. C. Foo,Chee Lip Gan,Carl V. Thompson	28
3	Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) 2015 ·Applied Physics Letters ·(unknown),Geok Ing Ng,S. Arulkumaran,(unknown),Kumud Ranjan,S. Vicknesh,S. C. Foo,Binit Syamal,Xing Zhou	18
4	Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal 2015 ·Japanese Journal of Applied Physics ·S. Arulkumaran,Geok Ing Ng,Kumud Ranjan,(unknown),S. C. Foo,Kian Siong Ang,S. Vicknesh,Surani Bin Dolmanan,Thirumaleshwara N. Bhat,S. Tripathy	18
5	Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon 2013 ·Applied Physics Letters ·(unknown),(unknown),S. Arulkumaran,Geok Ing Ng,(unknown),Yu Li,(unknown),Kian Siong Ang,Y. K. T. Maung,S. C. Foo	69
6	AlGaN/GaN MISHEMTs on silicon using atomic layer deposited ZrO2 as gate dielectrics 2013 ·(unknown),H. Wang,S. Arulkumaran,Geok Ing Ng,(unknown),Yunwei Li,(unknown),Kian Siong Ang,Y. K. T. Maung,S. C. Foo	1
7	Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate 2011 ·IEEE Electron Device Letters ·(unknown),Geok Ing Ng,S. Arulkumaran,Y. K. T. Maung,(unknown),S. C. Foo,S. Vicknesh	8
8	Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs 2011 ·IEEE Transactions on Electron Devices ·Zhihong Liu,Geok Ing Ng,S. Arulkumaran,Y. K. T. Maung,(unknown),S. C. Foo,S. Vicknesh	9
9	Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric 2010 ·IEEE Electron Device Letters ·(unknown),Geok Ing Ng,S. Arulkumaran,Y. K. T. Maung,(unknown),S. C. Foo,(unknown)	59
10	Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator 2009 ·Applied Physics Letters ·(unknown),Geok Ing Ng,S. Arulkumaran,Y. K. T. Maung,(unknown),S. C. Foo,S. Vicknesh	94
11	High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD 2009 ·IEEE Electron Device Letters ·Zhihong Liu,Geok Ing Ng,S. Arulkumaran,Y. K. T. Maung,(unknown),S. C. Foo,S. Vicknesh,Tao Xu,(unknown)	62

About S. C. Foo

S. C. Foo is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 11 papers that have together received 369 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (11 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (6 papers). The work is most often cited by research in Condensed Matter Physics (328 citations), Electronic, Optical and Magnetic Materials (180 citations) and Electrical and Electronic Engineering (301 citations). S. C. Foo has collaborated with scholars based in Singapore, United States and Japan. Frequent co-authors include Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, S. Vicknesh, Kian Siong Ang, Zhihong Liu, Tao Xu, Yu Li, Chee Lip Gan and Wardhana Aji Sasangka. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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