Yoshio Honda

5.0k total citations
317 papers, 4.0k citations indexed

About

Yoshio Honda is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Yoshio Honda has authored 317 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 271 papers in Condensed Matter Physics, 136 papers in Electronic, Optical and Magnetic Materials and 117 papers in Electrical and Electronic Engineering. Recurrent topics in Yoshio Honda's work include GaN-based semiconductor devices and materials (271 papers), Ga2O3 and related materials (136 papers) and ZnO doping and properties (91 papers). Yoshio Honda is often cited by papers focused on GaN-based semiconductor devices and materials (271 papers), Ga2O3 and related materials (136 papers) and ZnO doping and properties (91 papers). Yoshio Honda collaborates with scholars based in Japan, South Korea and United States. Yoshio Honda's co-authors include Hiroshi Amano, Nobuhiko Sawaki, Masahito Yamaguchi, Shugo Nitta, Manato Deki, M. Yamaguchi, Maki Kushimoto, Atsushi Tanaka, Yuto Ando and Toshiki Hikosaka and has published in prestigious journals such as Nature, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Yoshio Honda

307 papers receiving 3.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yoshio Honda Japan 31 3.2k 1.8k 1.5k 1.4k 804 317 4.0k
T. Suzuki Japan 34 1.8k 0.6× 2.5k 1.4× 788 0.5× 462 0.3× 2.4k 3.0× 382 4.4k
Kazuo Arai Japan 33 186 0.1× 599 0.3× 1.7k 1.2× 3.4k 2.3× 830 1.0× 256 4.8k
Bo Shen China 45 5.8k 1.8× 3.5k 1.9× 3.6k 2.5× 3.8k 2.7× 2.5k 3.1× 591 9.0k
Robert M. Farrell United States 27 1.8k 0.6× 553 0.3× 816 0.6× 1.2k 0.8× 1.2k 1.4× 76 2.7k
O. Eibl Germany 36 1.7k 0.5× 839 0.5× 2.2k 1.5× 1.1k 0.7× 672 0.8× 149 4.0k
D. K. Christen United States 46 7.0k 2.2× 3.5k 2.0× 3.1k 2.2× 1.1k 0.7× 1.5k 1.8× 270 9.1k
Wei Yang China 26 1.1k 0.3× 639 0.4× 613 0.4× 776 0.5× 788 1.0× 151 2.2k
C. R. Abernathy United States 27 1.6k 0.5× 888 0.5× 1.1k 0.8× 1.1k 0.8× 515 0.6× 85 2.4k
Rainer Kling Germany 29 108 0.0× 498 0.3× 1.1k 0.8× 797 0.6× 427 0.5× 162 3.2k
D C Herbert United Kingdom 26 385 0.1× 167 0.1× 816 0.6× 1.6k 1.2× 1.6k 2.0× 140 2.9k

Countries citing papers authored by Yoshio Honda

Since Specialization
Citations

This map shows the geographic impact of Yoshio Honda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshio Honda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshio Honda more than expected).

Fields of papers citing papers by Yoshio Honda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshio Honda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshio Honda. The network helps show where Yoshio Honda may publish in the future.

Co-authorship network of co-authors of Yoshio Honda

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshio Honda. A scholar is included among the top collaborators of Yoshio Honda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshio Honda. Yoshio Honda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Xu, Markus Pristovsek, Shugo Nitta, et al.. (2025). Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001). Advanced Science. 12(46). e09354–e09354.
2.
Nitta, Shugo, et al.. (2024). Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy. Journal of Crystal Growth. 648. 127923–127923. 1 indexed citations
3.
Nagata, Kengo, Yoshiki Saito, Keita Kataoka, et al.. (2023). A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes. Crystals. 13(3). 524–524. 7 indexed citations
4.
Watanabe, Hirotaka, et al.. (2023). Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN. Applied Physics Letters. 123(25). 3 indexed citations
5.
Kobayashi, Atsushi, et al.. (2023). Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering. Applied Physics Express. 17(1). 11002–11002. 12 indexed citations
6.
Deki, Manato, Jia Wang, Hirotaka Watanabe, et al.. (2023). Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic. Applied Physics Letters. 122(14). 11 indexed citations
7.
Nishitani, Tomohiro, et al.. (2023). Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current. 94–94. 1 indexed citations
8.
Tanaka, Atsushi, Daisuke Kawaguchi, Hirotaka Watanabe, et al.. (2022). Laser slice thinning of GaN-on-GaN high electron mobility transistors. Scientific Reports. 12(1). 7363–7363. 6 indexed citations
9.
Watanabe, Hirotaka, et al.. (2022). Space–Charge Profiles and Carrier Transport Properties in Dopant‐Free GaN‐Based p‐n Junction Formed by Distributed Polarization Doping. physica status solidi (RRL) - Rapid Research Letters. 16(7). 8 indexed citations
10.
Nagata, Kengo, et al.. (2022). Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED. Applied Physics Express. 15(4). 44001–44001. 8 indexed citations
11.
Ando, Yuto, Manato Deki, Hirotaka Watanabe, et al.. (2021). Experimental demonstration of GaN IMPATT diode at X-band. Applied Physics Express. 14(4). 46501–46501. 25 indexed citations
12.
Nagasawa, Yosuke, Kazunobu Kojima, Akira Hirano, et al.. (2021). Discrete wavelengths observed in electroluminescence originating from Al 1/2 Ga 1/2 N and Al 1/3 Ga 2/3 N created in nonflat AlGaN quantum wells. Journal of Physics D Applied Physics. 54(48). 485107–485107. 4 indexed citations
13.
Ando, Yuto, Kentaro Nagamatsu, Manato Deki, et al.. (2020). Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces. Applied Physics Letters. 117(24). 15 indexed citations
14.
Takahashi, Masahiro, Atsushi Tanaka, Yuto Ando, et al.. (2019). Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature. physica status solidi (b). 257(4). 17 indexed citations
15.
Arulkumaran, S., Kumud Ranjan, Geok Ing Ng, et al.. (2019). Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. Sensors. 19(23). 5107–5107. 10 indexed citations
16.
Usami, Shigeyoshi, Kazuya Toda, Atsushi Tanaka, et al.. (2019). Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current. Applied Physics Letters. 114(23). 43 indexed citations
17.
Liu, Zhibin, Shugo Nitta, Shigeyoshi Usami, et al.. (2018). Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 509. 50–53. 4 indexed citations
18.
Sun, Zheng, et al.. (2014). P - GaN by Mg Ion Implantation for Power Device Applications. 114(56). 109–112. 1 indexed citations
19.
Moriyama, Hiroshi, et al.. (1988). Endonasal Sinusectomy with Correction of Intranasal Structural Deformities. 31(7). 880–881.
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by T. Suzuki Breakdown of academic impact, for papers by Kazuo Arai Breakdown of academic impact, for papers by Bo Shen Breakdown of academic impact, for papers by Robert M. Farrell Breakdown of academic impact, for papers by O. Eibl Breakdown of academic impact, for papers by D. K. Christen Breakdown of academic impact, for papers by Wei Yang Breakdown of academic impact, for papers by C. R. Abernathy Breakdown of academic impact, for papers by Rainer Kling Breakdown of academic impact, for papers by D C Herbert
Rankless by CCL
2026