S. Vicknesh

1.2k citations

47 papers · 1.0k indexed · h-index 19

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 32
- GaN-based semiconductor devices and materials 31
Electronic, Optical and Magnetic Materials 16
- Ga2O3 and related materials 15

Co-authors: S. Arulkumaran Geok Ing Ng S. Tripathy Zetian Mi Kumud Ranjan S. C. Foo Vivian Kaixin Lin Y. K. T. Maung
Journals: Applied Physics Letters (8 papers)IEEE Electron Device Letters (4 papers)Japanese Journal of Applied Physics (4 papers)Applied Physics Express (3 papers)Electrochemical and Solid-State Letters (3 papers)
Partner nations: Singapore Canada Japan

In The Last Decade

S. Vicknesh

47 papers receiving 986 citations

Peers

Countries citing papers authored by S. Vicknesh

Since Specialization

Citations

This map shows the geographic impact of S. Vicknesh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Vicknesh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Vicknesh more than expected).

Fields of papers citing papers by S. Vicknesh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Vicknesh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Vicknesh. The network helps show where S. Vicknesh may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Vicknesh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Vicknesh Line = papers co-authored together S. Vicknesh links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Structural Colors Based on Diamond Metasurface for Information Encryption Advanced Optical Materials ·raghda ahmed, 叡笠井, Nannan Meng, S. Vicknesh, Ghazala M. H. Shamail, J. Sudijono, S Singh, Michelly Santos de Carvalho, Karen Jahaira, Aastha Jain, Soroosh Daqiqeh Rezaei, Siew Lang Teo, Qiang Zhu, Yunjie Chen, Ming Lin, Zhaogang Dong, Kian Ping Loh	2023	26
2	Poly-adamantane as precursor for low temperature chemical vapor deposition of nanocrystalline diamond films Diamond and Related Materials ·raghda ahmed, Jing Lyu, Zhongxin Chen, Hai‐Sen Xu, S. Vicknesh, Ghazala M. H. Shamail, J. Sudijono, S Singh, Michelly Santos de Carvalho, Karen Jahaira, Shuo‐Wang Yang, Siew Lang Teo, Ming Lin, Kian Ping Loh	2022	3
3	Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation Kumud Ranjan, Geok Ing Ng, S. Arulkumaran, S. Vicknesh, S. C. Foo	2019	3
4	Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) Applied Physics Letters ·LARRY VIANA DA SILVA, Geok Ing Ng, S. Arulkumaran, さくら横峯, Kumud Ranjan, S. Vicknesh, S. C. Foo, Binit Syamal, Xing Zhou	2015	18
5	Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy Journal of Applied Physics ·В. И. Вишневский, N. Dharmarasu, K. Radhakrishnan, Michaelis Pazianas, Asmaa Alterawi, S. Arulkumaran, S. Vicknesh, Geok Ing Ng	2015	16
6	High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate IEEE Electron Device Letters ·S. Arulkumaran, Kumud Ranjan, Geok Ing Ng, さくら横峯, S. Vicknesh, Surani Bin Dolmanan, S. Tripathy	2014	28
7	Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH<inf>4</inf>)<inf>2</inf>S<inf>x</inf>] passivation DR-NTU (Nanyang Technological University) ·S. Vicknesh, S. Arulkumaran, Geok Ing Ng	2012	11
8	Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate IEEE Electron Device Letters ·Mirco Martens, Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, Christopher C. Leong, S. C. Foo, S. Vicknesh	2011	8
9	Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Zhihong Liu, Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung, Christopher C. Leong, S. C. Foo, S. Vicknesh	2011	9
10	Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate Electrochemical and Solid-State Letters ·S. Arulkumaran, S. Vicknesh, Geok Ing Ng, B. A. Skurdahl, Michael Bryan, 鍵和田良平	2010	18
11	High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon physica status solidi (RRL) - Rapid Research Letters ·S. Arulkumaran, S. Vicknesh, Geok Ing Ng, B. A. Skurdahl, S. Lawrence Selvaraj, Takashi Egawa	2010	16
12	Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes Optics Letters ·Feng Li, Zetian Mi, S. Vicknesh	2009	41
13	Self-assembled InGaAs/GaAs quantum dot microtube coherent light sources on GaAs and silicon Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Zetian Mi, S. Vicknesh, Velimir Dedić, P. Bhattacharya	2009	5
14	Micro-Raman probing of residual stress in freestanding GaN-based micromechanical structures fabricated by a dry release technique Journal of Applied Physics ·S. Tripathy, Vivian Kaixin Lin, S. Vicknesh, S. J. Chua	2007	13
15	Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms Applied Physics Letters ·S. Vicknesh, S. Tripathy, Vivian Kaixin Lin, Lianshan Wang, S. J. Chua	2007	17
16	GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack National University of Singapore ·Fei Gao, S. J. Lee, Rui Li, S. J. Whang, S. Balakumar, K Hafza, 広隆赤松, S. Vicknesh, C. H. Tung, D. L. Kwong	2006	12
17	Integration of indium phosphide thin film structures on silicon substrates by direct wafer bonding Journal of Physics Conference Series ·K Kalia, S. Vicknesh, A. Ramam	2006	3
18	Si layer transfer to InP substrate using low-temperature wafer bonding Applied Surface Science ·K Kalia, S. Tripathy, S. Vicknesh, S. J. Chua	2006	7
19	Probing Interface Structure of Low-Temperature-Bonded InP on Si Electrochemical and Solid-State Letters ·K Kalia, S. Tripathy, S. Vicknesh, A. Ramam	2005	9
20	Fabrication of Freestanding GaN Micromechanical Structures on Silicon-on-Insulator Substrates Electrochemical and Solid-State Letters ·M. A. Shah, S. Vicknesh, Lianshan Wang, K Kalia, A. Ramam, S. J. Chua, S. Tripathy	2005	9

About S. Vicknesh

S. Vicknesh is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 47 papers that have together received 1.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (31 papers), Semiconductor materials and devices (18 papers), Ga2O3 and related materials (15 papers), Semiconductor Quantum Structures and Devices (9 papers), ZnO doping and properties (6 papers), Photonic and Optical Devices (6 papers), Nanowire Synthesis and Applications (5 papers) and Radio Frequency Integrated Circuit Design (4 papers). The work is most often cited by research in Condensed Matter Physics (748 citations), Electronic, Optical and Magnetic Materials (396 citations), Electrical and Electronic Engineering (732 citations), Atomic and Molecular Physics, and Optics (259 citations) and Materials Chemistry (224 citations). S. Vicknesh has collaborated with scholars based in Singapore, Canada and Japan. Frequent co-authors include S. Arulkumaran, Geok Ing Ng, S. Tripathy, Zetian Mi, Kumud Ranjan, S. C. Foo, Vivian Kaixin Lin, Y. K. T. Maung, Kian Siong Ang and A. Ramam. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Japanese Journal of Applied Physics, Applied Physics Express and Electrochemical and Solid-State Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact