R. Therrien

1.5k total citations
31 papers, 987 citations indexed

About

R. Therrien is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Therrien has authored 31 papers receiving a total of 987 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 25 papers in Electrical and Electronic Engineering and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Therrien's work include GaN-based semiconductor devices and materials (26 papers), Semiconductor materials and devices (15 papers) and Ga2O3 and related materials (11 papers). R. Therrien is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Semiconductor materials and devices (15 papers) and Ga2O3 and related materials (11 papers). R. Therrien collaborates with scholars based in United States and United Kingdom. R. Therrien's co-authors include E. L. Piner, Sameer Singhal, P. Rajagopal, J. W. Johnson, K. J. Linthicum, J. C. Roberts, Andrei Vescan, J.D. Brown, R. F. Davis and A.W. Hanson and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Therrien

30 papers receiving 904 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R. Therrien United States	16	810	749	274	189	173	31	987
Tom Zimmermann United States	16	689 0.9×	566 0.8×	399 1.5×	246 1.3×	195 1.1×	41	953
J. Teubert Germany	18	417 0.5×	277 0.4×	256 0.9×	328 1.7×	212 1.2×	38	697
M. Kasap Türkiye	17	434 0.5×	528 0.7×	280 1.0×	527 2.8×	293 1.7×	52	1.0k
R. Neuberger Germany	8	438 0.5×	366 0.5×	132 0.5×	201 1.1×	104 0.6×	11	609
Katja Tonisch Germany	17	406 0.5×	429 0.6×	150 0.5×	258 1.4×	283 1.6×	58	872
J.S. Flynn United States	13	614 0.8×	484 0.6×	243 0.9×	214 1.1×	283 1.6×	27	780
Junji Kotani Japan	18	910 1.1×	844 1.1×	408 1.5×	269 1.4×	323 1.9×	59	1.1k
Haibo Yin China	15	483 0.6×	361 0.5×	254 0.9×	181 1.0×	177 1.0×	61	614
Hongwei Liang China	12	212 0.3×	324 0.4×	204 0.7×	261 1.4×	60 0.3×	71	620
X. Z. Dang United States	9	732 0.9×	526 0.7×	350 1.3×	203 1.1×	254 1.5×	12	825

Countries citing papers authored by R. Therrien

Since Specialization

Citations

This map shows the geographic impact of R. Therrien's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Therrien with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Therrien more than expected).

Fields of papers citing papers by R. Therrien

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Therrien. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Therrien. The network helps show where R. Therrien may publish in the future.

Co-authorship network of co-authors of R. Therrien

This figure shows the co-authorship network connecting the top 25 collaborators of R. Therrien. A scholar is included among the top collaborators of R. Therrien based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Therrien. R. Therrien is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Johnson, Wayne, Sameer Singhal, A.W. Hanson, et al.. (2008). GaN-on-Si HEMTs: From Device Technology to Product Insertion. MRS Proceedings. 1068. 6 indexed citations

Singhal, Sameer, et al.. (2007). Qualification and Reliability of a GaN Process Platform. 11 indexed citations

Therrien, R., A. Chaudhari, Sameer Singhal, et al.. (2007). A Comparison of AlGaN/GaN HFETs on Si Substrates in Ceramic Air Cavity and Plastic Overmold Packages. IEEE MTT-S International Microwave Symposium digest. 635–638. 3 indexed citations

Singhal, Sameer, J. C. Roberts, P. Rajagopal, et al.. (2006). GaN-ON-Si Failure Mechanisms and Reliability Improvements. 95–98. 46 indexed citations

Singhal, Sameer, A. Chaudhari, A.W. Hanson, et al.. (2006). Reliability of large periphery GaN-on-Si HFETs. Microelectronics Reliability. 46(8). 1247–1253. 73 indexed citations

Pearton, S. J., F. Ren, J. W. Johnson, et al.. (2006). Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors. MRS Proceedings. 955. 5 indexed citations

Singhal, Sameer, A. Chaudhari, A.W. Hanson, et al.. (2006). GaN-On-Si Reliability: A Comparative Study Between Process Platforms. 21–24. 15 indexed citations

Piner, E. L., Sameer Singhal, P. Rajagopal, et al.. (2006). Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities. 24. 1–4. 11 indexed citations

Nagy, W., Sameer Singhal, J. W. Johnson, et al.. (2005). 150 W GaN-on-Si RF Power Transistor. IEEE MTT-S International Microwave Symposium Digest, 2005.. 483–486. 43 indexed citations

10.

Singhal, Sameer, A.W. Hanson, R. Therrien, et al.. (2005). Reliability of large periphery GaN-on-Si HFETs. 135–149. 13 indexed citations

11.

Kang, B. S., F. Ren, J. W. Johnson, et al.. (2005). Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Applied Physics Letters. 86(25). 42 indexed citations

12.

Readinger, Eric D., Joshua A. Robinson, Suzanne E. Mohney, & R. Therrien. (2005). Thermal stability of metallizations on GaN/Al_xGa_1−xN/GaN heterostructures. Semiconductor Science and Technology. 20(5). 389–397. 5 indexed citations

13.

Johnson, J. W., Ji‐Xing Gao, R. Therrien, et al.. (2004). Material, process, and device development of GaN-based HFETs on silicon substrates. 405–419. 31 indexed citations

14.

Kang, B. S., S. Kim, F. Ren, et al.. (2004). Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes. Applied Physics Letters. 85(14). 2962–2964. 92 indexed citations

15.

Vescan, Andrei, J.D. Brown, J. W. Johnson, et al.. (2002). AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 52–56. 25 indexed citations

16.

Brown, J.D., et al.. (2002). AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates. Solid-State Electronics. 46(10). 1535–1539. 99 indexed citations

17.

Kycia, J. B., J. Chen, R. Therrien, et al.. (2001). Effects of Dissipation on a Superconducting Single Electron Transistor. Physical Review Letters. 87(1). 17002–17002. 22 indexed citations

18.

Kurdak, Çağlıyan, R. Therrien, J. B. Kycia, et al.. (2000). Observation of large conductance oscillations in a superconducting single-electron transistor coupled to a two-dimensional electron gas. Physica E Low-dimensional Systems and Nanostructures. 6(1-4). 852–855. 1 indexed citations

19.

Therrien, R., G. Lucovsky, & R. F. Davis. (1999). Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces. physica status solidi (a). 176(1). 793–796. 24 indexed citations

20.

Hanser, A., Colin A. Wolden, W. G. Perry, et al.. (1998). Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates. Journal of Electronic Materials. 27(4). 238–245. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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