Thomas Gehrke

884 total citations
39 papers, 634 citations indexed

About

Thomas Gehrke is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Thomas Gehrke has authored 39 papers receiving a total of 634 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Condensed Matter Physics, 21 papers in Electrical and Electronic Engineering and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Thomas Gehrke's work include GaN-based semiconductor devices and materials (32 papers), Ga2O3 and related materials (19 papers) and Semiconductor materials and devices (17 papers). Thomas Gehrke is often cited by papers focused on GaN-based semiconductor devices and materials (32 papers), Ga2O3 and related materials (19 papers) and Semiconductor materials and devices (17 papers). Thomas Gehrke collaborates with scholars based in United States, Germany and Canada. Thomas Gehrke's co-authors include R. F. Davis, K. J. Linthicum, Pradeep Rajagopal, Darren B. Thomson, E.P. Carlson, R. Messier, Akhlesh Lakhtakia, Vijayakumar C. Venugopal, Wilfredo Otaño and Dale Batchelor and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Microbiology.

In The Last Decade

Thomas Gehrke

36 papers receiving 599 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Thomas Gehrke United States 13 394 251 210 199 154 39 634
Mingwei Zhu United States 14 557 1.4× 167 0.7× 315 1.5× 206 1.0× 121 0.8× 47 728
E. Armour United States 16 464 1.2× 517 2.1× 266 1.3× 162 0.8× 103 0.7× 67 868
C. G. Willison United States 14 357 0.9× 432 1.7× 143 0.7× 164 0.8× 124 0.8× 27 584
Łucja Marona Poland 16 448 1.1× 398 1.6× 106 0.5× 85 0.4× 65 0.4× 75 674
Pierre‐Marie Coulon United Kingdom 16 317 0.8× 198 0.8× 239 1.1× 271 1.4× 48 0.3× 41 597
J.C.H. Birbeck United Kingdom 10 384 1.0× 564 2.2× 150 0.7× 73 0.4× 77 0.5× 21 713
Harsha Reddy United States 9 76 0.2× 230 0.9× 211 1.0× 299 1.5× 52 0.3× 20 678
M. Schirra Germany 16 298 0.8× 354 1.4× 582 2.8× 390 2.0× 64 0.4× 31 830
Christoph Eichler Germany 19 584 1.5× 409 1.6× 96 0.5× 102 0.5× 64 0.4× 41 754
Yang Mei China 14 362 0.9× 458 1.8× 183 0.9× 144 0.7× 33 0.2× 66 738

Countries citing papers authored by Thomas Gehrke

Since Specialization
Citations

This map shows the geographic impact of Thomas Gehrke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Gehrke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Gehrke more than expected).

Fields of papers citing papers by Thomas Gehrke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Gehrke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Gehrke. The network helps show where Thomas Gehrke may publish in the future.

Co-authorship network of co-authors of Thomas Gehrke

This figure shows the co-authorship network connecting the top 25 collaborators of Thomas Gehrke. A scholar is included among the top collaborators of Thomas Gehrke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thomas Gehrke. Thomas Gehrke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Herrmann, Marietta, Miguel Gonçalves, Rudolf Hagen, et al.. (2025). Cisplatin-Mediated IL-6 and IDO1 Suppression in Mesenchymal Stromal Cells: Implications for Tumor Microenvironment Modulation In Vitro. Current Issues in Molecular Biology. 47(4). 231–231. 2 indexed citations
2.
Scherzad, Agmal, et al.. (2022). Juvenile psammomatoid ossifying fibroma (JPOF). Laryngo-Rhino-Otologie. 101(S 02). S243–S244.
3.
Franz, Bettina, Thomas Gehrke, Henning Lichtenberg, et al.. (2009). Unexpected extracellular and intracellular sulfur species during growth of Allochromatium vinosum with reduced sulfur compounds. Microbiology. 155(8). 2766–2774. 25 indexed citations
4.
Gehrke, Thomas. (2008). Review of structured thin films in wide bandgap semiconductors: pendeo-epitaxy of GaN and AlGaN. Journal of Nanophotonics. 2(1). 21990–21990. 3 indexed citations
5.
Elhamri, S., W. C. Mitchel, William D. Mitchell, et al.. (2005). A magnetotransport study of AlGaN/GaN heterostructures on silicon. Journal of Electronic Materials. 34(4). 444–449. 1 indexed citations
6.
Vescan, Andrei, J.D. Brown, J. W. Johnson, et al.. (2002). AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 52–56. 25 indexed citations
7.
Davis, R. F., Thomas Gehrke, K. J. Linthicum, et al.. (2001). Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and Si(111) substrates. Zeitschrift für Metallkunde. 92(2). 163–166.
8.
Gehrke, Thomas, K. J. Linthicum, Pradeep Rajagopal, et al.. (2000). Pendeo-Epitaxy<sup>TM</sup> Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition. Materials science forum. 338-342. 1491–1494. 1 indexed citations
9.
Davis, R. F., O. H. Nam, Tsvetanka Zheleva, et al.. (2000). Lateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin Films. Materials science forum. 338-342. 1471–1476. 4 indexed citations
10.
Gehrke, Thomas, K. J. Linthicum, P. Rajagopal, Edward A. Preble, & R. F. Davis. (2000). Advanced PENDEOEPITAXY of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 69–75. 1 indexed citations
11.
Ronning, Carsten, M. Uhrmacher, U. Vetter, et al.. (2000). Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery. Journal of Applied Physics. 87(5). 2149–2157. 47 indexed citations
12.
Huhn, Michaela, et al.. (1999). Timed sequence diagrams and tool-based analysis: a case study. Lecture notes in computer science. 645–660. 27 indexed citations
13.
Gehrke, Thomas, et al.. (1999). Generative Sequence Diagrams with Textual Annotations.. 65–72. 2 indexed citations
14.
Ronning, Carsten, H. Hofsäß, M. Deicher, et al.. (1999). Photoluminescence characterization of Mg implanted GaN. MRS Proceedings. 595. 1 indexed citations
15.
Linthicum, K. J., Thomas Gehrke, Darren B. Thomson, et al.. (1999). Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 477–483. 11 indexed citations
16.
Gehrke, Thomas, et al.. (1999). Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 124–129. 12 indexed citations
17.
Zheleva, Tsvetanka, Scott A. Smith, Darren B. Thomson, et al.. (1999). Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 275–280. 15 indexed citations
18.
Gehrke, Thomas, et al.. (1998). Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate. MRS Proceedings. 537. 3 indexed citations
19.
Linthicum, K. J., Thomas Gehrke, Darren B. Thomson, et al.. (1998). Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques. MRS Proceedings. 537. 1 indexed citations
20.
Gehrke, Thomas & Arend Rensink. (1997). Process Creation and Full Sequential Composition in a Name-Passing Calculus. Electronic Notes in Theoretical Computer Science. 7. 141–160. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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