W. G. Perry

1.1k total citations
27 papers, 897 citations indexed

About

W. G. Perry is a scholar working on Condensed Matter Physics, Mechanics of Materials and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, W. G. Perry has authored 27 papers receiving a total of 897 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Condensed Matter Physics, 12 papers in Mechanics of Materials and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in W. G. Perry's work include GaN-based semiconductor devices and materials (26 papers), Metal and Thin Film Mechanics (12 papers) and Ga2O3 and related materials (12 papers). W. G. Perry is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Metal and Thin Film Mechanics (12 papers) and Ga2O3 and related materials (12 papers). W. G. Perry collaborates with scholars based in United States, South Korea and United Kingdom. W. G. Perry's co-authors include R. F. Davis, M. D. Bremser, W. Shan, K. S. Ailey, T. W. Weeks, E.P. Carlson, A. J. Fischer, B. Goldenberg, J. J. Song and Tsvetanka Zheleva and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. G. Perry

27 papers receiving 872 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. G. Perry United States 13 803 376 348 335 248 27 897
K. Manabe Japan 9 847 1.1× 437 1.2× 349 1.0× 308 0.9× 278 1.1× 12 942
M. Vaille France 16 762 0.9× 384 1.0× 381 1.1× 291 0.9× 255 1.0× 25 842
P. G. Middleton United Kingdom 10 794 1.0× 419 1.1× 402 1.2× 234 0.7× 419 1.7× 25 934
G. Kamler Poland 17 781 1.0× 418 1.1× 368 1.1× 350 1.0× 264 1.1× 59 902
W. Van der Stricht Belgium 13 673 0.8× 299 0.8× 305 0.9× 193 0.6× 322 1.3× 29 772
A. Usui Japan 11 644 0.8× 334 0.9× 365 1.0× 334 1.0× 184 0.7× 24 745
J. A. Freitas United States 13 795 1.0× 437 1.2× 449 1.3× 362 1.1× 267 1.1× 25 909
A. S. Usikov Russia 13 638 0.8× 290 0.8× 359 1.0× 319 1.0× 198 0.8× 45 737
M. Shin United States 13 917 1.1× 368 1.0× 498 1.4× 417 1.2× 192 0.8× 23 978
Karen Charlene Cross United States 13 599 0.7× 322 0.9× 271 0.8× 241 0.7× 218 0.9× 17 715

Countries citing papers authored by W. G. Perry

Since Specialization
Citations

This map shows the geographic impact of W. G. Perry's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. G. Perry with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. G. Perry more than expected).

Fields of papers citing papers by W. G. Perry

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. G. Perry. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. G. Perry. The network helps show where W. G. Perry may publish in the future.

Co-authorship network of co-authors of W. G. Perry

This figure shows the co-authorship network connecting the top 25 collaborators of W. G. Perry. A scholar is included among the top collaborators of W. G. Perry based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. G. Perry. W. G. Perry is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bidnyk, S., B. D. Little, T. J. Schmidt, et al.. (1999). Stimulated emission in GaN thin films in the temperature range of 300–700 K. Journal of Applied Physics. 85(3). 1792–1795. 6 indexed citations
2.
Bremser, M. D., et al.. (1998). Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy. Journal of Electronic Materials. 27(4). 229–232. 12 indexed citations
3.
Perry, W. G., et al.. (1998). Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001). Journal of Applied Physics. 83(1). 469–475. 24 indexed citations
4.
Shan, W., A. J. Fischer, Sung‐Ho Hwang, et al.. (1998). Intrinsic exciton transitions in GaN. Journal of Applied Physics. 83(1). 455–461. 35 indexed citations
5.
Hanser, A., Colin A. Wolden, W. G. Perry, et al.. (1998). Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates. Journal of Electronic Materials. 27(4). 238–245. 12 indexed citations
6.
Perry, W. G., et al.. (1998). Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC. Thin Solid Films. 324(1-2). 107–114. 15 indexed citations
7.
Perry, W. G., Tsvetanka Zheleva, M. D. Bremser, et al.. (1997). Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates. Journal of Electronic Materials. 26(3). 224–231. 60 indexed citations
8.
Davis, R. F., T. W. Weeks, M. D. Bremser, et al.. (1997). Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization. Solid-State Electronics. 41(2). 129–134. 2 indexed citations
9.
Davis, R. F., M. D. Bremser, W. G. Perry, & K. S. Ailey. (1997). Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6HSiC(0001) substrates. Journal of the European Ceramic Society. 17(15-16). 1775–1779. 7 indexed citations
10.
Bergman, Leah, M. D. Bremser, W. G. Perry, et al.. (1997). Raman analysis of the configurational disorder in AlxGa1−xN films. Applied Physics Letters. 71(15). 2157–2159. 64 indexed citations
11.
Shan, W., A. J. Fischer, J. J. Song, et al.. (1996). Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates. Applied Physics Letters. 69(6). 740–742. 45 indexed citations
12.
Bremser, M. D., W. G. Perry, Tsvetanka Zheleva, et al.. (1996). Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates. MRS Internet Journal of Nitride Semiconductor Research. 1. 85 indexed citations
13.
Weeks, T. W., M. D. Bremser, K. S. Ailey, et al.. (1996). Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy. Journal of materials research/Pratt's guide to venture capital sources. 11(4). 1011–1018. 48 indexed citations
14.
Perry, W. G., Tsvetanka Zheleva, K. J. Linthicum, et al.. (1996). Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures. MRS Proceedings. 449. 1 indexed citations
15.
Shan, W., R. J. Hauenstein, A. J. Fischer, et al.. (1996). Strain effects on excitonic transitions in GaN: Deformation potentials. Physical review. B, Condensed matter. 54(19). 13460–13463. 141 indexed citations
16.
Shan, W., B. D. Little, A. J. Fischer, et al.. (1996). Binding energy for the intrinsic excitons in wurtzite GaN. Physical review. B, Condensed matter. 54(23). 16369–16372. 76 indexed citations
17.
Shreter, Yu. G., Yu. T. Rebane, Timothy J. Davis, et al.. (1996). Dislocation Luminescence in Wurtzite GaN. MRS Proceedings. 449. 21 indexed citations
18.
Davis, R. F., T. W. Weeks, M. D. Bremser, et al.. (1995). Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE. MRS Proceedings. 395. 18 indexed citations
19.
Glaser, E. R., T. A. Kennedy, Steven W. Brown, et al.. (1995). Detection of Magnetic Resonance on Shallow Donor - Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC. MRS Proceedings. 395. 6 indexed citations
20.
Davis, R. F., T. W. Weeks, M. D. Bremser, K. S. Ailey, & W. G. Perry. (1995). Growth via Mocvd and Characterization Of GaN and AlxGa1−xN(0001) Alloys for Optoelectronic and Microelectronic Device Applications. MRS Proceedings. 415. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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