K. J. Linthicum

3.1k total citations
90 papers, 2.4k citations indexed

About

K. J. Linthicum is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, K. J. Linthicum has authored 90 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 76 papers in Condensed Matter Physics, 65 papers in Electrical and Electronic Engineering and 27 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in K. J. Linthicum's work include GaN-based semiconductor devices and materials (76 papers), Semiconductor materials and devices (29 papers) and Ga2O3 and related materials (27 papers). K. J. Linthicum is often cited by papers focused on GaN-based semiconductor devices and materials (76 papers), Semiconductor materials and devices (29 papers) and Ga2O3 and related materials (27 papers). K. J. Linthicum collaborates with scholars based in United States, Sweden and United Kingdom. K. J. Linthicum's co-authors include P. Rajagopal, E. L. Piner, J. C. Roberts, J. W. Johnson, F. Ren, S. J. Pearton, R. F. Davis, B. S. Kang, R. Therrien and Pradeep Rajagopal and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

K. J. Linthicum

87 papers receiving 2.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. J. Linthicum United States 26 1.6k 1.5k 564 508 427 90 2.4k
P. Rajagopal United States 23 1.1k 0.7× 999 0.7× 352 0.6× 393 0.8× 259 0.6× 59 1.5k
Chih‐Wei Hsu Taiwan 24 615 0.4× 889 0.6× 863 1.5× 427 0.8× 544 1.3× 73 1.7k
Isaac Bryan United States 26 765 0.5× 1.7k 1.1× 702 1.2× 574 1.1× 972 2.3× 52 2.0k
Tomás Palacios United States 17 1.1k 0.7× 1.3k 0.8× 486 0.9× 179 0.4× 654 1.5× 31 1.6k
C. R. Abernathy United States 23 815 0.5× 1.0k 0.7× 987 1.8× 215 0.4× 604 1.4× 66 1.7k
E. Iliopoulos Greece 27 622 0.4× 1.5k 1.0× 819 1.5× 420 0.8× 823 1.9× 86 1.9k
Guido Mula Italy 20 662 0.4× 673 0.4× 648 1.1× 219 0.4× 322 0.8× 69 1.4k
L. Görgens Germany 12 468 0.3× 562 0.4× 397 0.7× 135 0.3× 240 0.6× 19 860
Jörg Schörmann Germany 22 427 0.3× 796 0.5× 801 1.4× 260 0.5× 727 1.7× 67 1.4k
D. M. Schaadt Germany 18 1.1k 0.7× 412 0.3× 952 1.7× 813 1.6× 674 1.6× 101 2.1k

Countries citing papers authored by K. J. Linthicum

Since Specialization
Citations

This map shows the geographic impact of K. J. Linthicum's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. J. Linthicum with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. J. Linthicum more than expected).

Fields of papers citing papers by K. J. Linthicum

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. J. Linthicum. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. J. Linthicum. The network helps show where K. J. Linthicum may publish in the future.

Co-authorship network of co-authors of K. J. Linthicum

This figure shows the co-authorship network connecting the top 25 collaborators of K. J. Linthicum. A scholar is included among the top collaborators of K. J. Linthicum based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. J. Linthicum. K. J. Linthicum is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Yu‐Lin, C. Y. Chang, Wantae Lim, et al.. (2010). Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(2). 376–379. 9 indexed citations
2.
Kang, Byoung Sam, Tanmay P. Lele, F. Ren, et al.. (2009). c-erbB-2 Sensing Using AlGaN/GaN High Electron Mobility Transistors For Breast Cancer Detection. ECS Transactions. 19(3). 57–63. 8 indexed citations
3.
Kang, B. S., Tanmay P. Lele, F. Ren, et al.. (2008). c-erbB-2 sensing using AlGaN∕GaN high electron mobility transistors for breast cancer detection. Applied Physics Letters. 92(19). 58 indexed citations
4.
Kang, B. S., F. Ren, F. Ren, et al.. (2008). Exhaled-Breath Detection Using AlGaN∕GaN High Electron Mobility Transistors Integrated with a Peltier Element. Electrochemical and Solid-State Letters. 11(3). J19–J19. 12 indexed citations
5.
Kang, B. S., Hung-Ta Wang, F. Ren, et al.. (2008). AlGaN/GaN HEMT And ZnO Nanorod Based Sensors for Chemical and Bio-Applications. ECS Transactions. 13(3). 53–63. 3 indexed citations
6.
Wang, H. T., B. S. Kang, F. Ren, et al.. (2007). Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters. 91(22). 45 indexed citations
7.
Kang, B. S., H. T. Wang, F. Ren, et al.. (2007). p H sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region. Applied Physics Letters. 91(1). 70 indexed citations
8.
Therrien, R., A. Chaudhari, Sameer Singhal, et al.. (2007). A Comparison of AlGaN/GaN HFETs on Si Substrates in Ceramic Air Cavity and Plastic Overmold Packages. IEEE MTT-S International Microwave Symposium digest. 635–638. 3 indexed citations
9.
Singhal, Sameer, J. C. Roberts, P. Rajagopal, et al.. (2006). GaN-ON-Si Failure Mechanisms and Reliability Improvements. 95–98. 46 indexed citations
10.
Singhal, Sameer, A. Chaudhari, A.W. Hanson, et al.. (2006). Reliability of large periphery GaN-on-Si HFETs. Microelectronics Reliability. 46(8). 1247–1253. 73 indexed citations
11.
Pearton, S. J., F. Ren, J. W. Johnson, et al.. (2006). Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors. MRS Proceedings. 955. 5 indexed citations
12.
Muth, John F., et al.. (2005). Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells. MRS Proceedings. 892.
13.
Nagy, W., Sameer Singhal, J. W. Johnson, et al.. (2005). 150 W GaN-on-Si RF Power Transistor. IEEE MTT-S International Microwave Symposium Digest, 2005.. 483–486. 43 indexed citations
14.
Kimball, Donald F., Paul Draxler, Jinseong Jeong, et al.. (2005). 50% PAE WCDMA basestation amplifier implemented with GaN HFETs. 4 pp.–4 pp.. 30 indexed citations
15.
Johnson, J. W., Ji‐Xing Gao, R. Therrien, et al.. (2004). Material, process, and device development of GaN-based HFETs on silicon substrates. 405–419. 31 indexed citations
16.
Kang, B. S., S. Kim, F. Ren, et al.. (2004). Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes. Applied Physics Letters. 85(14). 2962–2964. 92 indexed citations
17.
Vescan, Andrei, J.D. Brown, J. W. Johnson, et al.. (2002). AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 52–56. 25 indexed citations
18.
Davis, R. F., Thomas Gehrke, K. J. Linthicum, et al.. (2001). Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and Si(111) substrates. Zeitschrift für Metallkunde. 92(2). 163–166.
19.
Liaw, H.M., K. J. Linthicum, R. F. Davis, et al.. (1999). Epitaxial Growth of AlN on Si Substrates with Intermediate 3C-SiC as Buffer Layers. MRS Proceedings. 572. 1 indexed citations
20.
Perry, W. G., Tsvetanka Zheleva, K. J. Linthicum, et al.. (1996). Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures. MRS Proceedings. 449. 1 indexed citations

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