E. L. Piner

5.0k citations

144 papers · 4.1k indexed · h-index 38

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Bioengineering top 0.5%
- Analytical Chemistry and Sensors

Papers in

Condensed Matter Physics 114
- GaN-based semiconductor devices and materials 114
Bioengineering 19
- Analytical Chemistry and Sensors 19

Co-authors: J. C. Roberts S. M. Bedair N. A. El-Masry Tomás Palacios K. J. Linthicum P. Rajagopal J. W. Johnson J.W. Chung
Journals: Applied Physics Letters (26 papers)IEEE Electron Device Letters (11 papers)Journal of Applied Physics (8 papers)Electronics Letters (5 papers)Solid-State Electronics (4 papers)
Partner nations: United States United Kingdom Hong Kong

In The Last Decade

E. L. Piner

139 papers receiving 3.9k citations

Peers

Countries citing papers authored by E. L. Piner

Since Specialization

Citations

This map shows the geographic impact of E. L. Piner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. L. Piner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. L. Piner more than expected).

Fields of papers citing papers by E. L. Piner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. L. Piner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. L. Piner. The network helps show where E. L. Piner may publish in the future.

Co-authors

The 25 scholars most cited alongside E. L. Piner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. L. Piner Line = papers co-authored together E. L. Piner links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Lateral growth of diamond based on precise seeding patterns using electron-beam lithography SHILAP Revista de lepidopterología ·Florence A. Nugera, Jonathan Anderson, Dipa Devkota, Ganesh Aryal, Joyce H. Anderson, Christopher Engdahl, E. L. Piner, M. Holtz	2025	0
2	Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition Journal of Materials Science ·Florence A. Nugera, Dipa Devkota, K. C. Anupam, Anival Ayala, Ganesh Aryal, Chris Engdahl, E. L. Piner, M. Holtz	2024	4
3	Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations Carbon ·Saif Taqy, Pallab Sarkar, Md Abdul Hamid, Tarik Pranto, E. L. Piner, Ravi Droopad, Ariful Haque	2024	9
4	Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy Journal of Applied Physics ·Tuhin Dey, Augustus W. Arbogast, Qian Meng, Md. Shamim Reza, Aaron J. Muhowski, Joshua J. Cooper, Erdem Ozdemir, Fabián Naab, Thales Borrely, Jonathan Anderson, R. S. Goldman, Daniel Wasserman, Seth R. Bank, M. Holtz, E. L. Piner, Mark A. Wistey	2023	5
5	Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density Journal of Crystal Growth ·K. C. Anupam, Jonathan Anderson, Anival Ayala, Christopher Engdahl, E. L. Piner, M. Holtz	2023	4
6	Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Rony Saha, Jonathan Anderson, M. Holtz, E. L. Piner	2023	2
7	Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiN_x Passivation Layer ACS Applied Materials & Interfaces ·Anwar Siddique, Raju Ahmed, Jonathan Anderson, M. Holtz, E. L. Piner	2021	18
8	Effect of seeding density on the growth of diamond films by hot-filament chemical vapor deposition from sparse to dense range Journal of Applied Physics ·K. C. Anupam, Rony Saha, Jonathan Anderson, Anival Ayala, Christopher Engdahl, E. L. Piner, M. Holtz	2021	12
9	Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth ACS Applied Materials & Interfaces ·Raju Ahmed, Anwar Siddique, Jonathan Anderson, Chhabindra Gautam, M. Holtz, E. L. Piner	2020	24
10	Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate Journal of Materials Science Materials in Electronics ·Raju Ahmed, Anwar Siddique, Rony Saha, Jonathan Anderson, Chris Engdahl, M. Holtz, E. L. Piner	2020	7
11	Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers Crystal Growth & Design ·Raju Ahmed, Anwar Siddique, Jonathan Anderson, Chris Engdahl, M. Holtz, E. L. Piner	2019	20
12	Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD ACS Applied Electronic Materials ·Anwar Siddique, Raju Ahmed, Jonathan Anderson, Mohammad Nazari, Luke Yates, Samuel Graham, M. Holtz, E. L. Piner	2019	42
13	Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition Applied Physics Letters ·Raju Ahmed, Mohammad Nazari, B. L. Hancock, J.R. Simpson, Chris Engdahl, E. L. Piner, M. Holtz	2018	15
14	Near-ultraviolet micro-Raman study of diamond grown on GaN Applied Physics Letters ·Mohammad Nazari, B. L. Hancock, Jonathan Anderson, A. Savage, E. L. Piner, Samuel Graham, Firooz Faili, Se‐Joon Oh, Daniel Francis, Daniel J. Twitchen, M. Holtz	2016	14
15	Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer Applied Physics Letters ·B. L. Hancock, Mohammad Nazari, Jonathan Anderson, E. L. Piner, Firooz Faili, Se‐Joon Oh, Daniel J. Twitchen, Samuel Graham, M. Holtz	2016	27
16	Challenges of contact module integration for GaN-based devices in a Si-CMOS environment Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Derek W. Johnson, Pradhyumna Ravikirthi, Jae Woo Suh, Rinus T. P. Lee, Richard J. Hill, Man Hoi Wong, E. L. Piner, H. R. Harris	2014	3
17	Growth temperature dependence of optical modal gain and loss in GaN:Eu active medium on Si Optics Express ·J. H. Park, A. J. Steckl, P. Rajagopal, J. C. Roberts, E. L. Piner	2006	3
18	A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si TUbilio (Technical University of Darmstadt) ·Guangyuan Zhao, William Sutton, Dimitris Pavlidis, E. L. Piner, Johannes W. Schwank, Seth M. Hubbard	2003	10
19	GaN-Based Gunn Diodes : Their Frequency and Power Performance and Experimental Considerations IEICE Transactions on Electronics ·E. Alekseev, Dimitris Pavlidis, William Sutton, E. L. Piner, Joan M. Redwing	2001	7
20	Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system Applied Surface Science ·F. G. McIntosh, E. L. Piner, J. C. Roberts, M. K. Behbehani, M. E. Aumer, N. A. El-Masry, S. M. Bedair	1997	13

About E. L. Piner

E. L. Piner is a scholar working on Condensed Matter Physics, Bioengineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Mechanics of Materials, having authored 144 papers that have together received 4.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (114 papers), Semiconductor materials and devices (49 papers), Metal and Thin Film Mechanics (37 papers), Ga2O3 and related materials (36 papers), Silicon Carbide Semiconductor Technologies (26 papers), Semiconductor Quantum Structures and Devices (22 papers), Analytical Chemistry and Sensors (19 papers) and ZnO doping and properties (16 papers). The work is most often cited by research in Condensed Matter Physics (3.1k citations), Bioengineering (404 citations), Electronic, Optical and Magnetic Materials (1.2k citations), Electrical and Electronic Engineering (2.5k citations) and Mechanics of Materials (666 citations). E. L. Piner has collaborated with scholars based in United States, United Kingdom and Hong Kong. Frequent co-authors include J. C. Roberts, S. M. Bedair, N. A. El-Masry, Tomás Palacios, K. J. Linthicum, P. Rajagopal, J. W. Johnson, J.W. Chung, F. Ren and S. J. Pearton. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, Electronics Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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