P. Rajagopal

2.1k total citations
59 papers, 1.5k citations indexed

About

P. Rajagopal is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Bioengineering. According to data from OpenAlex, P. Rajagopal has authored 59 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Condensed Matter Physics, 39 papers in Electrical and Electronic Engineering and 17 papers in Bioengineering. Recurrent topics in P. Rajagopal's work include GaN-based semiconductor devices and materials (45 papers), Analytical Chemistry and Sensors (17 papers) and Ga2O3 and related materials (14 papers). P. Rajagopal is often cited by papers focused on GaN-based semiconductor devices and materials (45 papers), Analytical Chemistry and Sensors (17 papers) and Ga2O3 and related materials (14 papers). P. Rajagopal collaborates with scholars based in United States, Germany and Taiwan. P. Rajagopal's co-authors include K. J. Linthicum, E. L. Piner, J. C. Roberts, J. W. Johnson, F. Ren, S. J. Pearton, B. S. Kang, R. Therrien, Sameer Singhal and H. T. Wang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

P. Rajagopal

56 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Rajagopal United States 23 1.1k 999 393 363 352 59 1.5k
K. J. Linthicum United States 26 1.6k 1.5× 1.5k 1.5× 508 1.3× 387 1.1× 564 1.6× 90 2.4k
A. Potenza United Kingdom 13 492 0.5× 293 0.3× 217 0.6× 57 0.2× 410 1.2× 26 1.1k
D. Deresmes France 23 995 0.9× 131 0.1× 489 1.2× 52 0.1× 640 1.8× 74 1.6k
Shigehiko Sasa Japan 22 1.0k 1.0× 198 0.2× 132 0.3× 89 0.2× 948 2.7× 96 1.6k
Jaewu Choi United States 21 435 0.4× 151 0.2× 461 1.2× 56 0.2× 691 2.0× 65 1.2k
Guido Mula Italy 20 662 0.6× 673 0.7× 219 0.6× 20 0.1× 648 1.8× 69 1.4k
Julie Teetsov United States 8 558 0.5× 267 0.3× 108 0.3× 22 0.1× 263 0.7× 10 743
Chang Sheng Xia China 18 361 0.3× 430 0.4× 328 0.8× 13 0.0× 490 1.4× 41 1.0k
Michael Snure United States 24 1.1k 1.0× 264 0.3× 280 0.7× 19 0.1× 1.7k 4.7× 85 2.1k
Julia M. Bingham United States 8 187 0.2× 344 0.3× 728 1.9× 32 0.1× 273 0.8× 9 1.1k

Countries citing papers authored by P. Rajagopal

Since Specialization
Citations

This map shows the geographic impact of P. Rajagopal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Rajagopal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Rajagopal more than expected).

Fields of papers citing papers by P. Rajagopal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Rajagopal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Rajagopal. The network helps show where P. Rajagopal may publish in the future.

Co-authorship network of co-authors of P. Rajagopal

This figure shows the co-authorship network connecting the top 25 collaborators of P. Rajagopal. A scholar is included among the top collaborators of P. Rajagopal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Rajagopal. P. Rajagopal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rajagopal, P., et al.. (2024). RIS enabled NOMA for Resource Allocation in Beyond 5G Networks. Journal of Engineering Science and Technology Review. 17(1). 8–15.
2.
Wang, Yu‐Lin, C. Y. Chang, Wantae Lim, et al.. (2010). Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(2). 376–379. 9 indexed citations
3.
Kang, Byoung Sam, Tanmay P. Lele, F. Ren, et al.. (2009). c-erbB-2 Sensing Using AlGaN/GaN High Electron Mobility Transistors For Breast Cancer Detection. ECS Transactions. 19(3). 57–63. 8 indexed citations
4.
Kang, B. S., Tanmay P. Lele, F. Ren, et al.. (2008). c-erbB-2 sensing using AlGaN∕GaN high electron mobility transistors for breast cancer detection. Applied Physics Letters. 92(19). 58 indexed citations
5.
Kang, B. S., F. Ren, F. Ren, et al.. (2008). Exhaled-Breath Detection Using AlGaN∕GaN High Electron Mobility Transistors Integrated with a Peltier Element. Electrochemical and Solid-State Letters. 11(3). J19–J19. 12 indexed citations
6.
Kang, B. S., Hung-Ta Wang, F. Ren, et al.. (2008). AlGaN/GaN HEMT And ZnO Nanorod Based Sensors for Chemical and Bio-Applications. ECS Transactions. 13(3). 53–63. 3 indexed citations
7.
Wang, H. T., B. S. Kang, F. Ren, et al.. (2007). Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters. 91(22). 45 indexed citations
8.
Kang, B. S., H. T. Wang, F. Ren, et al.. (2007). p H sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region. Applied Physics Letters. 91(1). 70 indexed citations
9.
Singhal, Sameer, et al.. (2007). Qualification and Reliability of a GaN Process Platform. 11 indexed citations
10.
Steckl, A. J., et al.. (2006). Growth temperature dependence of optical modal gain and loss in GaN:Eu active medium on Si. Optics Express. 14(12). 5307–5307. 3 indexed citations
11.
Singhal, Sameer, J. C. Roberts, P. Rajagopal, et al.. (2006). GaN-ON-Si Failure Mechanisms and Reliability Improvements. 95–98. 46 indexed citations
12.
Singhal, Sameer, A. Chaudhari, A.W. Hanson, et al.. (2006). Reliability of large periphery GaN-on-Si HFETs. Microelectronics Reliability. 46(8). 1247–1253. 73 indexed citations
13.
Pearton, S. J., F. Ren, J. W. Johnson, et al.. (2006). Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors. MRS Proceedings. 955. 5 indexed citations
14.
Singhal, Sameer, A. Chaudhari, A.W. Hanson, et al.. (2006). GaN-On-Si Reliability: A Comparative Study Between Process Platforms. 21–24. 15 indexed citations
15.
Nagy, W., Sameer Singhal, J. W. Johnson, et al.. (2005). 150 W GaN-on-Si RF Power Transistor. IEEE MTT-S International Microwave Symposium Digest, 2005.. 483–486. 43 indexed citations
16.
Johnson, J. W., Ji‐Xing Gao, R. Therrien, et al.. (2004). Material, process, and device development of GaN-based HFETs on silicon substrates. 405–419. 31 indexed citations
17.
Kang, B. S., S. Kim, F. Ren, et al.. (2004). Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes. Applied Physics Letters. 85(14). 2962–2964. 92 indexed citations
18.
Vescan, Andrei, J.D. Brown, J. W. Johnson, et al.. (2002). AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 52–56. 25 indexed citations
19.
Ronning, Carsten, H. Hofsäß, M. Deicher, et al.. (1999). Photoluminescence characterization of Mg implanted GaN. MRS Proceedings. 595. 1 indexed citations
20.
Gehrke, Thomas, et al.. (1998). Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate. MRS Proceedings. 537. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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