W. Nagy

675 total citations
19 papers, 544 citations indexed

About

W. Nagy is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, W. Nagy has authored 19 papers receiving a total of 544 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 12 papers in Condensed Matter Physics and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in W. Nagy's work include Radio Frequency Integrated Circuit Design (13 papers), GaN-based semiconductor devices and materials (12 papers) and Silicon Carbide Semiconductor Technologies (8 papers). W. Nagy is often cited by papers focused on Radio Frequency Integrated Circuit Design (13 papers), GaN-based semiconductor devices and materials (12 papers) and Silicon Carbide Semiconductor Technologies (8 papers). W. Nagy collaborates with scholars based in United States, Finland and United Kingdom. W. Nagy's co-authors include K. J. Linthicum, Donald F. Kimball, Sandro Lanfranco, Paul Draxler, Chin Hsia, L.E. Larson, P.M. Asbeck, Sameer Singhal, R. Therrien and P. Rajagopal and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Electron Device Letters and Microelectronics Reliability.

In The Last Decade

W. Nagy

18 papers receiving 477 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Nagy United States 9 506 283 54 43 34 19 544
Yun Huang China 11 291 0.6× 293 1.0× 86 1.6× 49 1.1× 44 1.3× 41 344
Chunjiang Ren China 8 338 0.7× 322 1.1× 37 0.7× 82 1.9× 17 0.5× 16 368
E. Chartier France 13 476 0.9× 293 1.0× 53 1.0× 156 3.6× 27 0.8× 50 513
Hua-Quen Tserng United States 8 448 0.9× 396 1.4× 93 1.7× 119 2.8× 46 1.4× 16 501
Mattias Südow Sweden 10 390 0.8× 228 0.8× 18 0.3× 65 1.5× 18 0.5× 19 405
David Kopp United States 7 250 0.5× 251 0.9× 146 2.7× 81 1.9× 39 1.1× 12 342
Cen Kong China 9 278 0.5× 301 1.1× 128 2.4× 48 1.1× 86 2.5× 21 361
Alex Man Ho Kwan Hong Kong 8 268 0.5× 219 0.8× 52 1.0× 53 1.2× 29 0.9× 15 310
Stefan Moench Germany 12 292 0.6× 266 0.9× 65 1.2× 35 0.8× 40 1.2× 38 347
P. Coppens Belgium 8 306 0.6× 234 0.8× 90 1.7× 47 1.1× 29 0.9× 20 344

Countries citing papers authored by W. Nagy

Since Specialization
Citations

This map shows the geographic impact of W. Nagy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Nagy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Nagy more than expected).

Fields of papers citing papers by W. Nagy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Nagy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Nagy. The network helps show where W. Nagy may publish in the future.

Co-authorship network of co-authors of W. Nagy

This figure shows the co-authorship network connecting the top 25 collaborators of W. Nagy. A scholar is included among the top collaborators of W. Nagy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Nagy. W. Nagy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Johnson, Wayne, Sameer Singhal, A.W. Hanson, et al.. (2008). GaN-on-Si HEMTs: From Device Technology to Product Insertion. MRS Proceedings. 1068. 6 indexed citations
2.
Singhal, Sameer, et al.. (2007). Qualification and Reliability of a GaN Process Platform. 11 indexed citations
3.
Therrien, R., A. Chaudhari, Sameer Singhal, et al.. (2007). A Comparison of AlGaN/GaN HFETs on Si Substrates in Ceramic Air Cavity and Plastic Overmold Packages. IEEE MTT-S International Microwave Symposium digest. 635–638. 3 indexed citations
4.
Singhal, Sameer, A. Chaudhari, A.W. Hanson, et al.. (2006). Reliability of large periphery GaN-on-Si HFETs. Microelectronics Reliability. 46(8). 1247–1253. 73 indexed citations
5.
Nath, J., Dipankar Ghosh, W. Nagy, et al.. (2006). Voltage Controlled GaN-on-Si HFET Power Oscillator Using Thin-Film Ferroelectric Varactor Tuning. 87–90. 8 indexed citations
6.
Kimball, Donald F., Chin Hsia, Paul Draxler, et al.. (2006). High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs. IEEE Transactions on Microwave Theory and Techniques. 54(11). 3848–3856. 236 indexed citations
7.
Therrien, R., Sameer Singhal, A. Chaudhari, et al.. (2006). AlGaN/GaN HFETs on Si Substrates for WiMAX Applications. 743. 710–713. 2 indexed citations
8.
Therrien, R., Sameer Singhal, J. W. Johnson, et al.. (2006). A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency. 568–571. 25 indexed citations
9.
Nagy, W., Sameer Singhal, J. W. Johnson, et al.. (2005). 150 W GaN-on-Si RF Power Transistor. IEEE MTT-S International Microwave Symposium Digest, 2005.. 483–486. 43 indexed citations
10.
Kimball, Donald F., Paul Draxler, Jinseong Jeong, et al.. (2005). 50% PAE WCDMA basestation amplifier implemented with GaN HFETs. 4 pp.–4 pp.. 30 indexed citations
11.
Nagy, W., Sameer Singhal, S. Peters, et al.. (2004). Performance of AlGaN/GaN HFETs fabricated on 100mm silicon substrates for wireless basestation applications. 2. 833–836. 7 indexed citations
12.
Nagy, W., et al.. (2003). Linearity characteristics of microwave-power GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques. 51(2). 660–664. 44 indexed citations
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Vescan, Andrei, J.D. Brown, J. W. Johnson, et al.. (2002). AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 52–56. 25 indexed citations
16.
Singhal, Sameer, et al.. (2002). Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance. AMS Acta (University of Bologna). 3 indexed citations
17.
Kizilyalli, I.C., et al.. (1997). Silicon npn bipolar transistors with indium-implanted base regions. IEEE Electron Device Letters. 18(3). 120–122. 4 indexed citations
18.
19.
Koga, R., et al.. (1987). Scaling studies of CMOS SRAM soft-error tolerances—From 16K to 256K. 540–543. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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