G. Lucovsky

5.0k citations

136 papers · 4.2k indexed · 1 hit paper · h-index 33

Impact in

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
Materials Chemistry top 2%
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides
- ZnO doping and properties

Papers in

Electrical and Electronic Engineering 120
- Thin-Film Transistor Technologies 73
- Semiconductor materials and devices 72
- Silicon and Solar Cell Technologies 27
Materials Chemistry 96
- Silicon Nanostructures and Photoluminescence 67
- Electronic and Structural Properties of Oxides 13

Co-authors: D. V. Tsu S. S. Chao Yasuo Takagi B. N. Davidson H. Niimi Gregory N. Parsons Z. Jing P. D. Richard
Journals: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (21 papers)Journal of Non-Crystalline Solids (20 papers)Physical review. B, Condensed matter (7 papers)Applied Physics Letters (7 papers)Journal of Applied Physics (3 papers)
Partner nations: United States Germany Japan

In The Last Decade

G. Lucovsky

133 papers receiving 4.1k citations

Hit Papers

align trajectories log scale

Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition 1986 · 717 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1986 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Peers

Countries citing papers authored by G. Lucovsky

Since Specialization

Citations

This map shows the geographic impact of G. Lucovsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Lucovsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Lucovsky more than expected).

Fields of papers citing papers by G. Lucovsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Lucovsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Lucovsky. The network helps show where G. Lucovsky may publish in the future.

Co-authors

The 25 scholars most cited alongside G. Lucovsky, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Lucovsky Line = papers co-authored together G. Lucovsky links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Intermediate phases in binary and ternary alloys How far can we go with a semi-empirical bond-constraint theory? Journal of Optoelectronics and Advanced Materials ·G. Lucovsky, D.A. Baker, M. A. Paesler, J. C. Phillips, M. F. Thorpe	2007	5
2	Reduction of bonding constraints by self-organization in gate dielectrics for a-Si:H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs) Journal of Non-Crystalline Solids ·G. Lucovsky, J. C. Phillips	2006	1
3	Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability ·G. Lucovsky, E. Conjura, C. C. Fulton, Bernard Jesop, Ying Zou, R. J. Nemanich, D. E. Aspnes, Harald Ade, Darrell G. Schlom	2005	2
4	Band alignment between (100)Si and complex rare earth∕transition metal oxides Applied Physics Letters ·V. V. Afanas’ev, A. Stesmans, Chao Zhao, Matty Caymax, T. Heeg, J. Schubert, Yufei Jia, Darrell G. Schlom, G. Lucovsky	2004	130
5	New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·R. S. Johnson, H. Niimi, G. Lucovsky	2000	36
6	Interfacial Properties of Si-Si₃N₄formed by Remote Plasma Enhanced Chemical Vapor Deposition MRS Proceedings ·Veena Misra, Yuan Jinshe, Susan E. Szivos‐Bach, Wan Hongwen, G. Lucovsky, John R. Hauser	1999	5
7	Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces physica status solidi (a) ·R. Therrien, G. Lucovsky, R. F. Davis	1999	24
8	Coupled Electron-Hole Dynamics at theSi/SiO2Interface Physical Review Letters ·D Lyapunov, G. Lüpke, Massimiliano Di Ventra, Sokrates T. Pantelides, Jonathan M. Gilligan, N. H. Tolk, I.C. Kizilyalli, Pradip Kumar Roy, G. Margaritondo, G. Lucovsky	1998	41
9	Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon Applied Physics Letters ·J. Schäfer, A. P. Young, L. J. Brillson, H. Niimi, G. Lucovsky	1998	32
10	Local Field Contributions to the Bond-Stretching Frequencies of Si–H and Si–H2 Groups on Singular and Vicinal Si(111) physica status solidi (a) ·J. Μ. BLÁZQUEZ, G. Lucovsky	1997	3
11	Defect properties of Si-, O-, N-, and H-atoms at Si—SiO2 interfaces Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·G. Lucovsky, Z. Jing, Suzana Prat	1996	34
12	Theoretical studies of Si-O and Si-N bonding arrangements on vicinal Si(111) wafers Physical review. B, Condensed matter ·Z. Jing, G. Lucovsky, Jerry L. Whitten	1994	7
13	Thermal Relaxation Phenomena in the Formation of Device-Quality SiO₂/Si Interfaces Japanese Journal of Applied Physics ·G. Lucovsky, C. H. Björkman, Tetsuji Yasuda, U. Emmerichs, C. Meyer, Karl Leo, H. Kurz	1993	5
14	Electrical properties of microcrystalline silicon prepared by reactive magnetron sputtering from crystalline silicon targets Journal of Non-Crystalline Solids ·W. A. Turner, G. Lucovsky	1993	3
15	The role of dangling bond states in the picosecond recovery of photoinduced absorption in a-Si:H Journal of Non-Crystalline Solids ·A. Eßer, 聖生周, H. Kurz, G. Thulasi, M. J. Williams, G. Lucovsky	1991	3
16	Formation of device quality Si/SiO2 interfaces at low substrate temperatures by remote plasma enhanced chemical vapor deposition of SiO2 Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·G. Lucovsky, P.Th. van der Zeijden, J. T. Fitch	1990	29
17	Effects of thermal history on stress-related properties of very thin films of thermally grown silicon dioxide Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·J. T. Fitch, G. Lucovsky, E. Kobeda, E. A. Irene	1989	112
18	A study of electronic states in a-SiOx and a-SiNx thin films by infrared, auger electron and X-ray photoelectron spectroscopies Journal of Non-Crystalline Solids ·S. S. Chao, G. Lucovsky, 庄秋栄, Félix Barthe, P. D. Richard, D. V. Tsu, Yasuo Takagi, J. E. Keem, John E. Tyler, Miriam Hirsch	1985	13
19	Coupled local mode vibrations in a-Si alloy films Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·G. Lucovsky, S. S. Chao, Jeffrey Yang, John E. Tyler, W. Czubatyj	1984	19
20	High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy films Applied Physics Letters ·R. A. Rudder, J. W. Cook, G. Lucovsky	1984	35

About G. Lucovsky

G. Lucovsky is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics and Ceramics and Composites, having authored 136 papers that have together received 4.2k indexed citations. Recurring topics across this work include Thin-Film Transistor Technologies (73 papers), Semiconductor materials and devices (72 papers), Silicon Nanostructures and Photoluminescence (67 papers), Silicon and Solar Cell Technologies (27 papers), Semiconductor materials and interfaces (14 papers), Electronic and Structural Properties of Oxides (13 papers), Spectroscopy and Quantum Chemical Studies (8 papers) and GaN-based semiconductor devices and materials (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.5k citations), Materials Chemistry (2.8k citations), Ceramics and Composites (235 citations), Surfaces, Coatings and Films (240 citations) and Electronic, Optical and Magnetic Materials (522 citations). G. Lucovsky has collaborated with scholars based in United States, Germany and Japan. Frequent co-authors include D. V. Tsu, S. S. Chao, Yasuo Takagi, B. N. Davidson, H. Niimi, Gregory N. Parsons, Z. Jing, P. D. Richard, R. J. Markunas and J. T. Fitch. Their work appears in journals such as Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal of Non-Crystalline Solids, Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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