A.W. Hanson

775 total citations
32 papers, 637 citations indexed

About

A.W. Hanson is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A.W. Hanson has authored 32 papers receiving a total of 637 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 25 papers in Condensed Matter Physics and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A.W. Hanson's work include GaN-based semiconductor devices and materials (25 papers), Semiconductor materials and devices (18 papers) and Silicon Carbide Semiconductor Technologies (14 papers). A.W. Hanson is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Semiconductor materials and devices (18 papers) and Silicon Carbide Semiconductor Technologies (14 papers). A.W. Hanson collaborates with scholars based in United States and United Kingdom. A.W. Hanson's co-authors include S. A. Stockman, G. E. Stillman, Sameer Singhal, K. J. Linthicum, R. Therrien, P. Rajagopal, J. W. Johnson, I.C. Kizilyalli, M.T. Fresina and J. E. Baker and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

A.W. Hanson

32 papers receiving 568 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A.W. Hanson United States	14	580	384	286	94	72	32	637
Nobumitsu Hirose Japan	13	350 0.6×	171 0.4×	170 0.6×	103 1.1×	121 1.7×	49	450
Tso-Min Chou United States	8	452 0.8×	382 1.0×	168 0.6×	141 1.5×	91 1.3×	14	540
Quentin Diduck United States	9	412 0.7×	328 0.9×	114 0.4×	100 1.1×	126 1.8×	31	490
P. Stauß Germany	12	267 0.5×	301 0.8×	287 1.0×	123 1.3×	103 1.4×	27	473
P.J. van der Wel Netherlands	12	254 0.4×	178 0.5×	246 0.9×	64 0.7×	69 1.0×	34	438
C. H. Carter United States	12	465 0.8×	241 0.6×	218 0.8×	85 0.9×	97 1.3×	15	574
Naotaka Kuroda Japan	11	308 0.5×	196 0.5×	151 0.5×	82 0.9×	73 1.0×	31	422
R. Tyagi United States	6	382 0.7×	300 0.8×	81 0.3×	106 1.1×	152 2.1×	7	469
Zhongda Li United States	10	383 0.7×	349 0.9×	90 0.3×	101 1.1×	182 2.5×	34	488

Countries citing papers authored by A.W. Hanson

Since Specialization

Citations

This map shows the geographic impact of A.W. Hanson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.W. Hanson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.W. Hanson more than expected).

Fields of papers citing papers by A.W. Hanson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.W. Hanson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.W. Hanson. The network helps show where A.W. Hanson may publish in the future.

Co-authorship network of co-authors of A.W. Hanson

This figure shows the co-authorship network connecting the top 25 collaborators of A.W. Hanson. A scholar is included among the top collaborators of A.W. Hanson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.W. Hanson. A.W. Hanson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Alamo, Jesús A. del, et al.. (2009). Lifetime Estimation of Intrinsic Silicon Nitride MIM Capacitors in a GaN MMIC Process. DSpace@MIT (Massachusetts Institute of Technology). 4 indexed citations

Johnson, Wayne, Sameer Singhal, A.W. Hanson, et al.. (2008). GaN-on-Si HEMTs: From Device Technology to Product Insertion. MRS Proceedings. 1068. 6 indexed citations

Hanson, A.W., et al.. (2008). A broadband low cost GaN-on-silicon MMIC amplifier. 527–530. 7 indexed citations

Therrien, R., A. Chaudhari, Sameer Singhal, et al.. (2007). A Comparison of AlGaN/GaN HFETs on Si Substrates in Ceramic Air Cavity and Plastic Overmold Packages. IEEE MTT-S International Microwave Symposium digest. 635–638. 3 indexed citations

Park, Chris, Andrew Edwards, Pradeep Rajagopal, et al.. (2007). High-Power and High-Voltage AlGaN/GaN HEMTs-on-Si. 1–4. 3 indexed citations

Singhal, Sameer, J. C. Roberts, P. Rajagopal, et al.. (2006). GaN-ON-Si Failure Mechanisms and Reliability Improvements. 95–98. 46 indexed citations

Singhal, Sameer, A. Chaudhari, A.W. Hanson, et al.. (2006). Reliability of large periphery GaN-on-Si HFETs. Microelectronics Reliability. 46(8). 1247–1253. 73 indexed citations

Singhal, Sameer, A. Chaudhari, A.W. Hanson, et al.. (2006). GaN-On-Si Reliability: A Comparative Study Between Process Platforms. 21–24. 15 indexed citations

Piner, E. L., Sameer Singhal, P. Rajagopal, et al.. (2006). Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities. 24. 1–4. 11 indexed citations

10.

Nagy, W., Sameer Singhal, J. W. Johnson, et al.. (2005). 150 W GaN-on-Si RF Power Transistor. IEEE MTT-S International Microwave Symposium Digest, 2005.. 483–486. 43 indexed citations

11.

Singhal, Sameer, A.W. Hanson, R. Therrien, et al.. (2005). Reliability of large periphery GaN-on-Si HFETs. 135–149. 13 indexed citations

12.

Johnson, J. W., Ji‐Xing Gao, R. Therrien, et al.. (2004). Material, process, and device development of GaN-based HFETs on silicon substrates. 405–419. 31 indexed citations

13.

Hanson, A.W., et al.. (2002). Benefits and Challenges in Decreasing GaAs Through Substrate Via Size and Die Thickness. 2 indexed citations

14.

Hanson, A.W., et al.. (1998). A selective gate recess process utilizing MBE-grown In/sub 0.5/Ga/sub 0.5/P etch-stop layers for GaAs-based FET technologies. 195–197. 1 indexed citations

15.

Hanson, A.W.. (1994). Analysis of and process development for high-frequency indium gallium phosphide/gallium arsenide heterojunction bipolar transistors. 1 indexed citations

16.

Hanson, A.W., S. A. Stockman, & G. E. Stillman. (1993). Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base. IEEE Electron Device Letters. 14(1). 25–28. 51 indexed citations

17.

Stockman, S. A., et al.. (1993). Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters. 62(11). 1248–1250. 35 indexed citations

18.

Stillman, G. E., et al.. (1993). Carbon Doping of InGaAs for Device Applications. MRS Proceedings. 325. 1 indexed citations

19.

Stockman, S. A., A.W. Hanson, & G. E. Stillman. (1992). Growth of carbon-doped p-type InxGa1−xAs (0<x≤0.53) by metalorganic chemical vapor deposition. Applied Physics Letters. 60(23). 2903–2905. 58 indexed citations

20.

Laskar, J., et al.. (1991). Effect of reduced temperature on the f/sub T/ of AlGaAs/GaAs heterojunction bipolar transistors. IEEE Electron Device Letters. 12(6). 329–331. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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