Yueh-Chin Lin

518 citations

52 papers · 402 indexed · h-index 12

Co-authors: Edward Yi Chang Heng‐Tung Hsu Quang Ho Luc Chang Fu Dee Chia-Hsun Wu Yuen‐Yee Wong Yen-Ku Lin Po-Chun Chang
Topics: Semiconductor materials and devices (33 papers)GaN-based semiconductor devices and materials (29 papers)Ga2O3 and related materials (13 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters IEEE Transactions on Electron Devices Thin Solid Films
Partner nations: Taiwan Malaysia Japan

In The Last Decade

Yueh-Chin Lin

51 papers receiving 383 citations

Peers

Countries citing papers authored by Yueh-Chin Lin

Since Specialization

Citations

This map shows the geographic impact of Yueh-Chin Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yueh-Chin Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yueh-Chin Lin more than expected).

Fields of papers citing papers by Yueh-Chin Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yueh-Chin Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yueh-Chin Lin. The network helps show where Yueh-Chin Lin may publish in the future.

Co-authorship network of co-authors of Yueh-Chin Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Yueh-Chin Lin. A scholar is included among the top collaborators of Yueh-Chin Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yueh-Chin Lin. Yueh-Chin Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications 2024 ·IEEE Journal of the Electron Devices Society ·H.‐H. Tseng,Yueh-Chin Lin,(unknown),(unknown),Heng‐Tung Hsu,(unknown),Edward Yi Chang	2
2	Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications 2023 ·Micromachines ·(unknown),(unknown),F. Gámiz,Edward Yi Chang,Yueh-Chin Lin	3
3	Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications 2023 ·ECS Journal of Solid State Science and Technology ·Che-Wei Hsu,Yueh-Chin Lin,(unknown),Edward Yi Chang	3
4	Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band 2023 ·Electronics ·Che-Wei Hsu,Yueh-Chin Lin,(unknown),Edward Yi Chang	2
5	Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications 2023 ·Micromachines ·(unknown),Yueh-Chin Lin,Heng‐Tung Hsu,F. Gámiz,(unknown)	5
6	Impact of Source Resistance on Linearity of AlGaN/GaN HEMTs at Ka-Band 2023 ·ECS Journal of Solid State Science and Technology ·(unknown),Yueh-Chin Lin,(unknown),(unknown),Heng‐Tung Hsu,Pin Su,Edward Yi Chang	2
7	Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications 2023 ·IEEE Journal of the Electron Devices Society ·(unknown),Yueh-Chin Lin,(unknown),(unknown),Heng‐Tung Hsu,Chang Fu Dee,Edward Yi Chang	3
8	Effect of the Indium Compositions in Tri-Gate In _x Ga _1−x As HEMTs for High-Frequency Low Noise Application 2022 ·ECS Journal of Solid State Science and Technology ·(unknown),(unknown),Yueh-Chin Lin,Heng‐Tung Hsu,(unknown),Ching-Ting Lee,Edward Yi Chang	1
9	Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications 2021 ·Materials ·Chun Wang,(unknown),Heng‐Tung Hsu,(unknown),Yueh-Chin Lin,Chang Fu Dee,(unknown)	6
10	A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects 2019 ·Microelectronics Journal ·(unknown),Kun‐Ming Chen,(unknown),Sankalp Kumar Singh,(unknown),Yueh-Chin Lin,Edward Yi Chang	7
11	Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications 2019 ·ECS Journal of Solid State Science and Technology ·(unknown),Yueh-Chin Lin,(unknown),(unknown),Heng‐Tung Hsu,Simon M. Sze,Edward Yi Chang	2
12	InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D 2018 ·IEEE Journal of the Electron Devices Society ·Po-Chun Chang,(unknown),(unknown),Chia-Hsun Wu,Yen-Ku Lin,Yueh-Chin Lin,Simon M. Sze,Edward Yi Chang	10
13	High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications 2018 ·IEEE Electron Device Letters ·Chia-Hsun Wu,(unknown),(unknown),(unknown),(unknown),(unknown),Jianyou Chen,(unknown),(unknown),Yen-Ku Lin,Po-Chun Chang,Quang Ho Luc,Yueh-Chin Lin,Edward Yi Chang	47
14	Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs 2017 ·IEEE Journal of the Electron Devices Society ·(unknown),(unknown),(unknown),Yueh-Chin Lin,Bo‐Yuan Chen,(unknown),Burhanuddin Yeop Majlis,Chang Fu Dee,Edward Yi Chang	15
15	AlGaN/GaN MIS-HEMTs With High Quality ALD-Al₂O₃ Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants 2017 ·IEEE Journal of the Electron Devices Society ·(unknown),(unknown),Yueh-Chin Lin,Quang Ho Luc,(unknown),Chia-Hsun Wu,Chang Fu Dee,Burhanuddin Yeop Majlis,Edward Yi Chang	22
16	Electrical Analysis and PBTI Reliability of In_0.53Ga_0.47As MOSFETs With AlN Passivation Layer and NH₃Postremote Plasma Treatment 2016 ·IEEE Transactions on Electron Devices ·Po-Chun Chang,Quang Ho Luc,Yueh-Chin Lin,(unknown),Yen-Ku Lin,Simon M. Sze,Edward Yi Chang	8
17	Effect of high voltage stress on the DC performance of the Al₂O₃/AlN GaN metal–insulator–semiconductor high-electron mobility transistor for power applications 2015 ·Applied Physics Express ·(unknown),Yueh-Chin Lin,(unknown),(unknown),(unknown),Edward Yi Chang	7
18	Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures 2013 ·Journal of Electronic Materials ·(unknown),Yueh-Chin Lin,Chien-I Kuo,Edward Yi Chang,(unknown),Yuen‐Yee Wong,(unknown),(unknown),Chia-Yuan Chang,(unknown),(unknown),(unknown),(unknown),(unknown),David Hwang	2
19	Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures 2008 ·IEEE Transactions on Device and Materials Reliability ·(unknown),Edward Yi Chang,Yueh-Chin Lin,(unknown)	7
20	Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications 2004 ·Japanese Journal of Applied Physics ·Edward Yi Chang,Yueh-Chin Lin,(unknown),(unknown),Guo‐Wei Huang,D. Biswas,Chun–Yen Chang	6

About Yueh-Chin Lin

Yueh-Chin Lin is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 52 papers that have together received 402 indexed citations. Recurring topics across this work include Semiconductor materials and devices (33 papers), GaN-based semiconductor devices and materials (29 papers) and Ga2O3 and related materials (13 papers). The work is most often cited by research in Condensed Matter Physics (231 citations), Electronic, Optical and Magnetic Materials (118 citations) and Electrical and Electronic Engineering (324 citations). Yueh-Chin Lin has collaborated with scholars based in Taiwan, Malaysia and Japan. Frequent co-authors include Edward Yi Chang, Heng‐Tung Hsu, Quang Ho Luc, Edward Yi Chang, Chang Fu Dee, Chia-Hsun Wu, Yuen‐Yee Wong, Yen-Ku Lin, Po-Chun Chang and Burhanuddin Yeop Majlis. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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