Yueh-Chin Lin

518 total citations
52 papers, 402 citations indexed

About

Yueh-Chin Lin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yueh-Chin Lin has authored 52 papers receiving a total of 402 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 29 papers in Condensed Matter Physics and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yueh-Chin Lin's work include Semiconductor materials and devices (33 papers), GaN-based semiconductor devices and materials (29 papers) and Ga2O3 and related materials (13 papers). Yueh-Chin Lin is often cited by papers focused on Semiconductor materials and devices (33 papers), GaN-based semiconductor devices and materials (29 papers) and Ga2O3 and related materials (13 papers). Yueh-Chin Lin collaborates with scholars based in Taiwan, Malaysia and Japan. Yueh-Chin Lin's co-authors include Edward Yi Chang, Heng‐Tung Hsu, Quang Ho Luc, Chia-Hsun Wu, Chang Fu Dee, Edward Yi Chang, Yuen‐Yee Wong, Po-Chun Chang, Yen-Ku Lin and Hiroshi Iwai and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

Yueh-Chin Lin

51 papers receiving 383 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yueh-Chin Lin Taiwan 12 324 231 118 102 90 52 402
Ivor Guiney United Kingdom 12 269 0.8× 252 1.1× 121 1.0× 65 0.6× 63 0.7× 41 349
B. Benbakhti United Kingdom 12 305 0.9× 156 0.7× 98 0.8× 66 0.6× 125 1.4× 39 412
Zhongda Li United States 10 383 1.2× 349 1.5× 182 1.5× 90 0.9× 101 1.1× 34 488
Christopher Hatem United States 11 389 1.2× 260 1.1× 157 1.3× 153 1.5× 124 1.4× 33 503
Athith Krishna United States 11 255 0.8× 340 1.5× 172 1.5× 84 0.8× 98 1.1× 16 379
Christian Wurm United States 12 283 0.9× 420 1.8× 193 1.6× 134 1.3× 108 1.2× 27 459
X. Li United States 12 172 0.5× 315 1.4× 116 1.0× 122 1.2× 127 1.4× 34 347
Zhe Cheng China 12 173 0.5× 179 0.8× 85 0.7× 72 0.7× 78 0.9× 37 289
Ming Tao China 10 242 0.7× 258 1.1× 141 1.2× 69 0.7× 80 0.9× 18 328
Feng-Tso Chien Taiwan 12 480 1.5× 277 1.2× 129 1.1× 118 1.2× 82 0.9× 71 542

Countries citing papers authored by Yueh-Chin Lin

Since Specialization
Citations

This map shows the geographic impact of Yueh-Chin Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yueh-Chin Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yueh-Chin Lin more than expected).

Fields of papers citing papers by Yueh-Chin Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yueh-Chin Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yueh-Chin Lin. The network helps show where Yueh-Chin Lin may publish in the future.

Co-authorship network of co-authors of Yueh-Chin Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Yueh-Chin Lin. A scholar is included among the top collaborators of Yueh-Chin Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yueh-Chin Lin. Yueh-Chin Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tseng, H.‐H., et al.. (2024). Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications. IEEE Journal of the Electron Devices Society. 12. 268–274. 2 indexed citations
2.
3.
Hsu, Che-Wei, et al.. (2023). Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications. ECS Journal of Solid State Science and Technology. 12(7). 75005–75005. 3 indexed citations
4.
Lin, Yueh-Chin, et al.. (2022). Effect of the Indium Compositions in Tri-Gate In x Ga 1−x As HEMTs for High-Frequency Low Noise Application. ECS Journal of Solid State Science and Technology. 11(11). 115006–115006. 1 indexed citations
5.
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Chen, Kun‐Ming, et al.. (2019). A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects. Microelectronics Journal. 87. 51–54. 7 indexed citations
8.
Wu, Chia-Hsun, Jianyou Chen, Yen-Ku Lin, et al.. (2018). High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications. IEEE Electron Device Letters. 39(7). 991–994. 47 indexed citations
9.
Chang, Po-Chun, Chia-Hsun Wu, Yen-Ku Lin, et al.. (2018). InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D. IEEE Journal of the Electron Devices Society. 6. 856–860. 10 indexed citations
10.
Lin, Yueh-Chin, et al.. (2017). Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs. IEEE Journal of the Electron Devices Society. 5(3). 170–174. 15 indexed citations
11.
Lin, Yueh-Chin, Jin Hwa Lee, Jer‐Shen Maa, et al.. (2017). Reliability improvement in GaN HEMT power device using a field plate approach. Solid-State Electronics. 133. 64–69. 21 indexed citations
12.
Lin, Yueh-Chin, Quang Ho Luc, Chia-Hsun Wu, et al.. (2017). AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants. IEEE Journal of the Electron Devices Society. 6. 110–115. 22 indexed citations
13.
Chang, Po-Chun, Quang Ho Luc, Yueh-Chin Lin, et al.. (2016). Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3Postremote Plasma Treatment. IEEE Transactions on Electron Devices. 63(9). 3466–3472. 8 indexed citations
14.
Lin, Yueh-Chin, et al.. (2016). Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications. Journal of Electronic Materials. 45(7). 3285–3289. 5 indexed citations
15.
Lin, Yueh-Chin, et al.. (2015). An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure. 20. 419–422. 2 indexed citations
16.
17.
Luc, Quang Ho, et al.. (2014). Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors. Japanese Journal of Applied Physics. 53(4S). 04EF04–04EF04. 10 indexed citations
18.
Lin, Yueh-Chin, et al.. (2012). Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography. 744–746. 1 indexed citations
19.
Chang, Edward Yi, et al.. (2008). Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures. IEEE Transactions on Device and Materials Reliability. 8(3). 621–628. 7 indexed citations
20.
Chang, Edward Yi, et al.. (2004). Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications. Japanese Journal of Applied Physics. 43(7A). L871–L871. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026