V. Reddy

2.1k total citations
34 papers, 1.6k citations indexed

About

V. Reddy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials. According to data from OpenAlex, V. Reddy has authored 34 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 1 paper in Mechanics of Materials. Recurrent topics in V. Reddy's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (18 papers). V. Reddy is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (18 papers). V. Reddy collaborates with scholars based in United States, India and Israel. V. Reddy's co-authors include S. Krishnan, A.T. Krishnan, S. Chakravarthi, J. Antonio Travieso-Rodríguez, C. Machala, Rakesh Vattikonda, Wenping Wang, Yu Cao, Andrew Marshall and C. Duvvury and has published in prestigious journals such as IEEE Transactions on Electron Devices, Electronics Letters and Microelectronics Reliability.

In The Last Decade

V. Reddy

33 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Reddy United States 17 1.6k 169 75 44 30 34 1.6k
A. Bravaix France 20 1.4k 0.9× 66 0.4× 62 0.8× 76 1.7× 18 0.6× 118 1.4k
Haldun Küflüoğlu United States 15 1.4k 0.9× 123 0.7× 52 0.7× 43 1.0× 11 0.4× 23 1.4k
Jeff A. Babcock United States 8 867 0.5× 66 0.4× 68 0.9× 96 2.2× 16 0.5× 19 904
S. Mudanai United States 16 809 0.5× 77 0.5× 92 1.2× 51 1.2× 12 0.4× 37 835
C. Kothandaraman United States 12 416 0.3× 90 0.5× 97 1.3× 80 1.8× 33 1.1× 28 460
Giuseppe La Rosa United States 13 657 0.4× 34 0.2× 39 0.5× 42 1.0× 22 0.7× 35 699
N. Planes France 17 781 0.5× 51 0.3× 49 0.7× 39 0.9× 7 0.2× 56 804
M. Inuishi Japan 13 539 0.3× 64 0.4× 75 1.0× 31 0.7× 11 0.4× 77 556
S. Ramey United States 15 684 0.4× 44 0.3× 115 1.5× 45 1.0× 16 0.5× 50 732
H. Oyamatsu Japan 9 278 0.2× 45 0.3× 115 1.5× 24 0.5× 28 0.9× 26 316

Countries citing papers authored by V. Reddy

Since Specialization
Citations

This map shows the geographic impact of V. Reddy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Reddy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Reddy more than expected).

Fields of papers citing papers by V. Reddy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Reddy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Reddy. The network helps show where V. Reddy may publish in the future.

Co-authorship network of co-authors of V. Reddy

This figure shows the co-authorship network connecting the top 25 collaborators of V. Reddy. A scholar is included among the top collaborators of V. Reddy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Reddy. V. Reddy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
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Reddy, V., et al.. (2019). Challenges in Radio Frequency and Mixed-Signal Circuit Reliability. 13.1.1–13.1.4. 11 indexed citations
3.
Varghese, Dhanoop, V. Reddy, S. Krishnan, & Muhammad A. Alam. (2014). OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review. Microelectronics Reliability. 54(8). 1477–1488. 17 indexed citations
4.
Keane, John, et al.. (2013). Duty-cycle shift under asymmetric BTI aging: A simple characterization method and its application to SRAM timing. Zenodo (CERN European Organization for Nuclear Research). 4A.5.1–4A.5.5. 9 indexed citations
5.
Chen, Min, Haldun Küflüoğlu, John M. Carulli, & V. Reddy. (2013). Aging sensors for workload centric guardbanding in dynamic voltage scaling applications. 4A.2.1–4A.2.5. 14 indexed citations
6.
Nourani, Mehrdad, et al.. (2013). Performance entitlement by exploiting transistor's BTI recovery. 341–346. 6 indexed citations
7.
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9.
Varghese, Dhanoop, Haldun Küflüoğlu, V. Reddy, et al.. (2006). Universality of Off-State Degradation in Drain Extended NMOS Transistors. 81. 1–4. 18 indexed citations
10.
Krishnan, A.T., V. Reddy, J. Rosal, et al.. (2006). SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation. 1–4. 31 indexed citations
11.
Boselli, Gianluca, V. Reddy, & C. Duvvury. (2005). Latch-up in 65nm CMOS technology: a scaling perspective. 137–144. 31 indexed citations
12.
Reddy, V., et al.. (2005). Impact of negative bias temperature instability on product parametric drift. 148–155. 58 indexed citations
13.
Chakravarthi, S., A.T. Krishnan, V. Reddy, C. Machala, & S. Krishnan. (2004). A comprehensive framework for predictive modeling of negative bias temperature instability. 273–282. 256 indexed citations
14.
Krishnan, A.T., V. Reddy, S. Chakravarthi, et al.. (2004). NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs]. 14.5.1–14.5.4. 169 indexed citations
15.
Boselli, Gianluca, V. Reddy, & C. Duvvury. (2004). Impact of Scaling on the High Current Behavior of RF CMOS Technology. IEEE Transactions on Device and Materials Reliability. 4(3). 542–548. 3 indexed citations
16.
Boselli, Gianluca, et al.. (2004). Technology scaling effects on the ESD design parameters in sub-100 nm CMOS transistors. 21.1.1–21.1.4. 7 indexed citations
17.
Reddy, V., A.T. Krishnan, Andrew Marshall, et al.. (2003). Impact of negative bias temperature instability on digital circuit reliability. 248–254. 194 indexed citations
18.
Amerasekera, A., C. Duvvury, V. Reddy, & M. Rödder. (2002). Substrate triggering and salicide effects on ESD performance and protection circuit design in deep submicron CMOS processes. 547–550. 66 indexed citations
19.
McPherson, J. W., et al.. (2002). Comparison of E and 1/E TDDB models for SiO/sub 2/ under long-term/low-field test conditions. 171–174. 48 indexed citations
20.
Reddy, V., et al.. (1992). High efficiency microwave diode oscillators. Electronics Letters. 28(18). 1699–1701. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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