I.-C. Chen

407 citations

22 papers · 253 indexed · h-index 9

Electrical and Electronic Engineering
- Semiconductor materials and devices 19
- Advancements in Semiconductor Devices and Circuit Design 18
- Integrated Circuits and Semiconductor Failure Analysis 5
- Ferroelectric and Negative Capacitance Devices 3
- Low-power high-performance VLSI design 2
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 3
Materials Chemistry
- Electronic and Structural Properties of Oxides 2
Instrumentation
Biomedical Engineering
- Analog and Mixed-Signal Circuit Design 3

Co-authors: D. J. Coleman Akitoshi Nishimura Akitoshi Nishimura M. Rödder H. L. Tigelaar S. Aur Amitava Chatterjee H.-J. Wann George Brown
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials
Journals: IEEE Electron Device Letters (6 papers)IEEE Transactions on Electron Devices (1 paper)Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (1 paper)
Partner nations: United States Taiwan

In The Last Decade

I.-C. Chen

20 papers receiving 235 citations

Peers

Countries citing papers authored by I.-C. Chen

Since Specialization

Citations

This map shows the geographic impact of I.-C. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I.-C. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I.-C. Chen more than expected).

Fields of papers citing papers by I.-C. Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I.-C. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I.-C. Chen. The network helps show where I.-C. Chen may publish in the future.

Co-authorship network

The 25 scholars most cited alongside I.-C. Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I.-C. Chen Line = papers co-authored together I.-C. Chen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The design of analog front-end circuitry for 1x HD-DVD PRML read channel Dilfuza Jovlieva,I.-C. Chen,Bo‐Wei Chen,Shane Nebauer	2006	1
2	Extensions of the effective thickness theory of oxide breakdown D. J. Coleman,W. R. Hunter,George Brown,I.-C. Chen	2003	1
3	Degradation of deep sub-micron isolation by vacuum ultraviolet radiation from low temperature back end plasma-assisted processes Sara Cadiñanos Fernández,S. Krishnan,U Wick,M. Rödder,Kelly Taylor,Lan Michelle Tran,I.-C. Chen,M. W. Goodwin,Tingli Tsai	2002	1
4	Physical oxide thickness extraction and verification using quantum mechanical simulation C. Bowen,O. HALYCH,Gerhard Klimeck,Amitava Chatterjee,D. K. Blanks,Roger K. Lake,Jerry C. Hu,Joseph G. Davis,Vladimir Valkovic,S. V. Hattangady,I.-C. Chen	2002	24
5	A 0.25 μm gate length CMOS technology for 1V low power applications-device design and power/performance considerations M. Nandakumar,Amitava Chatterjee,Gemma Stacey,I.-C. Chen	2002	0
6	Pass transistor designs using pocket implant to improve manufacturability for 256 Mbit DRAM and beyond Amitava Chatterjee,Norio Sakai,S. Aur,P.K. Mozumder,M. Rödder,I.-C. Chen	2002	5
7	High performance sub-half micron CMOS using rapid thermal processing R. A. Chapman,John Kuehne,James Bruce Straseske,W.F. Richardson,Rei Carlos Jardim,A. P. Lane,I.-C. Chen,Patel Ghanshyambhai Vishnubhai,C.H. Blanton,松下英二,Risky Harisa Haslan	2002	8
8	A scaled 1.8 V, 0.18 μm gate length CMOS technology: device design and reliability considerations M. Rödder,S. Aur,I.-C. Chen	2002	14
9	A shallow trench isolation study for 0.25/0.18 μm CMOS technologies and beyond Amitava Chatterjee,亜紀子伊藤,Soumya Shubhra Nag,Diego Vizuete Paz,D. Rogers,Kelly Taylor,K. Joyner,Lei Yu,Wentan Jiang,A. Amerasekera,T.W. Houston,I.-C. Chen	2002	9
10	A device design study of 0.25 μm gate length CMOS for 1 V low power applications M. Nandakumar,Amitava Chatterjee,M. Rödder,I.-C. Chen	2002	2
11	A comparative study of LOCOS-type isolations for 256 Mbit DRAM I.-C. Chen,M. Rödder,Алфеева Елена Владимировна	2002	1
12	A pass transistor design methodology for 256 Mbit DRAM and beyond Amitava Chatterjee,Norio Sakai,P.K. Mozumder,M. Rödder,I.-C. Chen	2002	3
13	Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Amitava Chatterjee,Diego Vizuete Paz,K. Joyner,Wentan Jiang,John Kuehne,Lei Yu,Tingli Tsai,D. Rogers,Miguel Flores R.,Irfan ul Haq,Aslihan Reyhanoglu,C. Gallenga,Kelly Taylor,Soumya Shubhra Nag,L. Sansolone,Maureen A. Hanratty,Herschel M. Marchman,Sara Cadiñanos Fernández,I.-C. Chen	1997	20
14	Performance and reliability enhancement for CVD tungsten polycided CMOS transistors due to fluorine incorporation in the gate oxide IEEE Electron Device Letters ·I.-C. Chen,M. Rödder,H.-J. Wann,C. I. Eugene Kim	1994	10
15	TDDB on poly-gate single doping type capacitors Claudia Sofía Chávez Cárdenas,I.-C. Chen,H. L. Tigelaar	1992	7
16	A quantitative physical model for the band-to-band tunneling-induced substrate hot electron injection in MOS devices IEEE Transactions on Electron Devices ·I.-C. Chen,R. M. Merrifield	1992	8
17	Effects of poly depletion on the estimate of thin dielectric lifetime IEEE Electron Device Letters ·Sarala Kumari Nelapati,I.-C. Chen,H. L. Tigelaar	1991	20
18	Simple gate-to-drain overlapped MOSFETs using poly spacers for high immunity to channel hot-electron degradation IEEE Electron Device Letters ·I.-C. Chen,C.C. Wei,R. M. Merrifield	1990	5
19	Gate current injection initiated by electron band-to-band tunneling in MOS devices IEEE Electron Device Letters ·I.-C. Chen,D. J. Coleman,R. M. Merrifield	1989	13
20	A high quality high temperature compatible Tantalum oxide film for advanced dRAM applications Bo Shen,I.-C. Chen,Sourav Banerjee,George Brown,Jennifer Douglas,I. Fromont,R.R. Doering	1987	12

About I.-C. Chen

I.-C. Chen is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Hardware and Architecture, Biomedical Engineering and Materials Chemistry, having authored 22 papers that have together received 253 indexed citations. Recurring topics across this work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Copper Interconnects and Reliability (3 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Analog and Mixed-Signal Circuit Design (3 papers), Electronic and Structural Properties of Oxides (2 papers) and Low-power high-performance VLSI design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (239 citations), Atomic and Molecular Physics, and Optics (29 citations), Electronic, Optical and Magnetic Materials (12 citations), Materials Chemistry (29 citations) and Instrumentation (2 citations). I.-C. Chen has collaborated with scholars based in United States and Taiwan. Frequent co-authors include D. J. Coleman, Akitoshi Nishimura Akitoshi Nishimura, M. Rödder, H. L. Tigelaar, S. Aur, Amitava Chatterjee, H.-J. Wann, George Brown, Gerhard Klimeck and C.C. Wei. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices and Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

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