C.M. Maziar

1.6k total citations
80 papers, 1.1k citations indexed

About

C.M. Maziar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C.M. Maziar has authored 80 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 77 papers in Electrical and Electronic Engineering, 37 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in C.M. Maziar's work include Advancements in Semiconductor Devices and Circuit Design (61 papers), Semiconductor materials and devices (61 papers) and Silicon Carbide Semiconductor Technologies (27 papers). C.M. Maziar is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (61 papers), Semiconductor materials and devices (61 papers) and Silicon Carbide Semiconductor Technologies (27 papers). C.M. Maziar collaborates with scholars based in United States. C.M. Maziar's co-authors include A.F. Tasch, S. Jallepalli, Mark Lundstrom, S.A. Hareland, W.-K. Shih, M. E. Klausmeier-Brown, G. Chindalore, V. Chandramouli, Greg Yeric and Sanjay K. Banerjee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

C.M. Maziar

73 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.M. Maziar United States 20 1.1k 387 82 52 34 80 1.1k
N.M. Margalit United States 14 1.0k 0.9× 577 1.5× 71 0.9× 69 1.3× 19 0.6× 41 1.0k
N. Vodjdani France 17 655 0.6× 491 1.3× 44 0.5× 42 0.8× 40 1.2× 52 781
Matthew Peters United States 17 786 0.7× 525 1.4× 36 0.4× 52 1.0× 19 0.6× 69 851
K.M. Dzurko United States 14 607 0.6× 465 1.2× 40 0.5× 28 0.5× 50 1.5× 38 649
A.J. Moseley United Kingdom 13 466 0.4× 334 0.9× 60 0.7× 36 0.7× 18 0.5× 50 564
Maolong Ke United Kingdom 15 855 0.8× 336 0.9× 29 0.4× 32 0.6× 25 0.7× 57 915
P G Eliseev Russia 14 650 0.6× 565 1.5× 40 0.5× 35 0.7× 52 1.5× 81 730
D. P. Wilt United States 19 1.0k 1.0× 705 1.8× 54 0.7× 32 0.6× 15 0.4× 67 1.1k
M. Kitamura Japan 19 1.0k 0.9× 590 1.5× 25 0.3× 31 0.6× 21 0.6× 81 1.0k
H. S. Djie United States 17 716 0.7× 678 1.8× 161 2.0× 77 1.5× 35 1.0× 74 807

Countries citing papers authored by C.M. Maziar

Since Specialization
Citations

This map shows the geographic impact of C.M. Maziar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.M. Maziar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.M. Maziar more than expected).

Fields of papers citing papers by C.M. Maziar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.M. Maziar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.M. Maziar. The network helps show where C.M. Maziar may publish in the future.

Co-authorship network of co-authors of C.M. Maziar

This figure shows the co-authorship network connecting the top 25 collaborators of C.M. Maziar. A scholar is included among the top collaborators of C.M. Maziar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.M. Maziar. C.M. Maziar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Maziar, C.M., et al.. (2003). Extension of common-emitter breakdown voltage for high speed Si/Si/sub 1-x/Ge/sub x/ HBT's. 30. 42–45. 3 indexed citations
2.
3.
Shih, W.-K., et al.. (2002). Analysis of quantization effects in silicon (100) inversion layers using a Monte Carlo tool. 201–204. 1 indexed citations
4.
5.
Mudanai, S., G. Chindalore, W.-K. Shih, et al.. (1999). Models for electron and hole mobilities in MOS accumulation layers. IEEE Transactions on Electron Devices. 46(8). 1749–1759. 23 indexed citations
6.
Hareland, S.A., S. Jallepalli, Haihong Wang, et al.. (1998). A physically-based model for quantization effects in hole inversion layers. IEEE Transactions on Electron Devices. 45(1). 179–186. 13 indexed citations
7.
8.
Jallepalli, S., et al.. (1996). A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's. IEEE Transactions on Electron Devices. 43(8). 1264–1273. 55 indexed citations
9.
Chandramouli, V., C.M. Maziar, & Joe C. Campbell. (1994). Design considerations for high performance avalanche photodiode multiplication layers. IEEE Transactions on Electron Devices. 41(5). 648–654. 12 indexed citations
10.
Rashed, M., et al.. (1993). Electroabsorption Effect in GexSi1-xSi Multiple Quantum Wells at Room Temperature. Integrated Photonics Research. IWA5–IWA5. 1 indexed citations
11.
Maziar, C.M., et al.. (1992). Accounting for bandstructure effects in the hydrodynamic model: A first-order approach for silicon device simulation. Solid-State Electronics. 35(2). 131–139. 23 indexed citations
12.
Tasch, A.F., et al.. (1992). MOSFET drain engineering analysis for deep-submicrometer dimensions: a new structural approach. IEEE Transactions on Electron Devices. 39(8). 1922–1927. 12 indexed citations
13.
Maziar, C.M., et al.. (1992). Relaxation time approximation and mixing of hot and cold electron populations. Electronics Letters. 28(12). 1173–1175. 8 indexed citations
14.
Maziar, C.M., et al.. (1991). An evaluation of energy transport models for silicon device simulation. Solid-State Electronics. 34(6). 617–628. 27 indexed citations
15.
Park, Keeseong, C. S. Kyono, Shuvajit Bhattacharya, et al.. (1989). Rapid thermal annealing for H passivation of polysilicon MOSFETs from Si3N4 overcoat. 455–458. 2 indexed citations
16.
Maziar, C.M., et al.. (1989). The role of the split-off band in electron-hole energy exchange dynamics in selected III-V semiconductors. Journal of Applied Physics. 66(5). 2020–2026. 2 indexed citations
17.
Miller, Douglas R., V. P. Kesan, Robert L. Rogers, C.M. Maziar, & Dean P. Neikirk. (1988). Time Dependent Simulation Of The Quantum Well Injection Transit Time Diode. Proceedings of SPIE - The International Society for Optical Engineering. 1039. 5–6. 2 indexed citations
18.
Maziar, C.M. & Mark Lundstrom. (1987). On the estimation of base transit time in AlGaAs/GaAs bipolar transistors. IEEE Electron Device Letters. 8(3). 90–92. 41 indexed citations
19.
Maziar, C.M. & Mark Lundstrom. (1987). Monte Carlo simulation of GaAs Schottky barrier behaviour. Electronics Letters. 23(2). 61–62. 10 indexed citations
20.
Bandyopadhyay, Subhajyoti, M. E. Klausmeier-Brown, C.M. Maziar, Subhadeep Datta, & Mark Lundstrom. (1987). A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation. IEEE Transactions on Electron Devices. 34(2). 392–399. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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