T. Ohzone

849 total citations
101 papers, 647 citations indexed

About

T. Ohzone is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Ohzone has authored 101 papers receiving a total of 647 indexed citations (citations by other indexed papers that have themselves been cited), including 101 papers in Electrical and Electronic Engineering, 20 papers in Materials Chemistry and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Ohzone's work include Semiconductor materials and devices (80 papers), Advancements in Semiconductor Devices and Circuit Design (58 papers) and Integrated Circuits and Semiconductor Failure Analysis (31 papers). T. Ohzone is often cited by papers focused on Semiconductor materials and devices (80 papers), Advancements in Semiconductor Devices and Circuit Design (58 papers) and Integrated Circuits and Semiconductor Failure Analysis (31 papers). T. Ohzone collaborates with scholars based in Japan and United Kingdom. T. Ohzone's co-authors include T. Matsuda, S. Odanaka, Motoyuki Fukumoto, G. Fuse, Takashi Hori, K. Tsuji, T. Hirao, Masaru Sasago, Akihiro Shinohara and S. Horiuchi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

T. Ohzone

93 papers receiving 617 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Ohzone Japan	14	619	133	104	100	22	101	647
Alexander Olbrich Germany	13	496 0.8×	134 1.0×	333 3.2×	125 1.3×	25 1.1×	30	626
A. Chou United States	11	657 1.1×	114 0.9×	80 0.8×	71 0.7×	21 1.0×	24	684
C.-Y. Lu Taiwan	15	679 1.1×	109 0.8×	127 1.2×	58 0.6×	20 0.9×	60	707
Mark N. Ruberto United States	11	418 0.7×	77 0.6×	82 0.8×	42 0.4×	23 1.0×	23	458
R. Sundaresan United States	13	692 1.1×	132 1.0×	90 0.9×	53 0.5×	12 0.5×	36	707
K. Hieda Japan	15	620 1.0×	60 0.5×	84 0.8×	142 1.4×	23 1.0×	60	681
M. Hane Japan	13	422 0.7×	84 0.6×	72 0.7×	33 0.3×	17 0.8×	60	449
K. Rim United States	13	661 1.1×	72 0.5×	138 1.3×	146 1.5×	10 0.5×	20	697
H.I. Hanafi United States	8	644 1.0×	331 2.5×	120 1.2×	104 1.0×	26 1.2×	20	676
V. Mazzocchi France	12	409 0.7×	91 0.7×	120 1.2×	111 1.1×	25 1.1×	29	452

Countries citing papers authored by T. Ohzone

Since Specialization

Citations

This map shows the geographic impact of T. Ohzone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ohzone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ohzone more than expected).

Fields of papers citing papers by T. Ohzone

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ohzone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ohzone. The network helps show where T. Ohzone may publish in the future.

Co-authorship network of co-authors of T. Ohzone

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ohzone. A scholar is included among the top collaborators of T. Ohzone based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ohzone. T. Ohzone is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Matsuda, T., et al.. (2015). A test structure for reliability analysis of CMOS devices under DC and high frequency AC stress. 86–89. 4 indexed citations

Ohzone, T., et al.. (2011). Green/Red Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon. Japanese Journal of Applied Physics. 50(6R). 64102–64102. 2 indexed citations

Matsuda, T., et al.. (2008). A test structure for channel length engineering of NAND gates in standard cell library. 76–79. 1 indexed citations

Ohzone, T., et al.. (2007). A CMOS Temperature Sensor Circuit. IEICE Transactions on Electronics. E90-C(4). 895–902. 5 indexed citations

Matsuda, T., et al.. (2004). A V_ and Temperature Independent CMOS Voltage Reference Circuit. 104(249). 13–17. 3 indexed citations

Matsuda, T., et al.. (2004). A V/sub DD/ and temperature independent CMOS voltage reference circuit. Asia and South Pacific Design Automation Conference. 559–560. 4 indexed citations

Matsuda, T., et al.. (2004). A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission. e82 c. 173–177. 1 indexed citations

Matsuda, T., et al.. (2002). Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO_2(Special Issue on Electronic Displays). IEICE Transactions on Electronics. 85(11). 1895–1904. 2 indexed citations

Ohzone, T., et al.. (2002). An analysis of hot-carrier-induced photoemission profiles in n-MOSFETs. j72 c ii. 211–215.

10.

Ohzone, T., et al.. (2002). Performance evaluation of CMOS ring-oscillators with source/drain regions fabricated by asymmetric/symmetric ion-implantation. j72 c ii. 131–136. 1 indexed citations

11.

Matsuda, T., et al.. (1999). A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs. IEICE Transactions on Electronics. 82(4). 593–601. 7 indexed citations

12.

Ohzone, T., et al.. (1997). Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach (Special Issue on SOI Devices and Their Process Technologies). IEICE Transactions on Electronics. 80(3). 417–422. 4 indexed citations

13.

Ohzone, T., et al.. (1996). Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90゜and 45゜ (Special Issue on Microelectronic Test Structure). IEICE Transactions on Electronics. 79(2). 172–178. 2 indexed citations

14.

Ohzone, T. & Takashi Hori. (1994). C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO_2. IEICE Transactions on Electronics. 77(6). 952–959. 1 indexed citations

15.

Ohzone, T., et al.. (1992). A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS and Trench-Isolated MOSFETs. IEICE Transactions on Electronics. 76(11). 1673–1682. 4 indexed citations

16.

Fuse, G., Motoyuki Fukumoto, Akihiro Shinohara, et al.. (1987). A new isolation method with boron-implanted sidewalls for controlling narrow-width effect. IEEE Transactions on Electron Devices. 34(2). 356–360. 27 indexed citations

17.

Fuse, G., Hiroshi Ogawa, S. Odanaka, et al.. (1987). A practical trench isolation technology with a novel planarization process. 732–735. 29 indexed citations

18.

Fuse, G., et al.. (1986). Depth Profiles of Boron Atoms with Large Tilt‐Angle Implantations. Journal of The Electrochemical Society. 133(5). 996–998. 23 indexed citations

19.

Sasago, Masaru, Masayuki Endo, Kazufumi Ogawa, et al.. (1985). Submicron Optical Contrast Enhanced Lithography Using Water-Soluble Materials. Symposium on VLSI Technology. 76–77. 1 indexed citations

20.

Fuse, G., S. Odanaka, Masaru Sasago, et al.. (1985). Trench Isolation with Boron Implanted Side-Walls for Controlling Narrow-Width Effect of n-MOS Threshold Voltages. Symposium on VLSI Technology. 58–59. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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