T. Ohzone
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- Semiconductor materials and devices 80
- Advancements in Semiconductor Devices and Circuit Design 58
- Integrated Circuits and Semiconductor Failure Analysis 31
- Thin-Film Transistor Technologies 13
- 3D IC and TSV technologies 8
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- Semiconductor materials and interfaces 11
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- Silicon Nanostructures and Photoluminescence 15
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- Nanowire Synthesis and Applications 8
T. Ohzone
93 papers receiving 617 citations
Peers
Comparison fields: 5 of 52
- Electrical and Electronic Engineering 619
- Atomic and Molecular Physics, and Optics 104
- Materials Chemistry 133
- Hardware and Architecture 17
- Biomedical Engineering 100
Countries citing papers authored by T. Ohzone
This map shows the geographic impact of T. Ohzone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ohzone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ohzone more than expected).
Fields of papers citing papers by T. Ohzone
This network shows the impact of papers produced by T. Ohzone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ohzone. The network helps show where T. Ohzone may publish in the future.
Co-authorship network
The 25 scholars most cited alongside T. Ohzone, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2016 | 1 | |
| 2 | 2010 | 4 | |
| 3 | 2007 | 5 | |
| 4 | 2004 | 4 | |
| 5 | A V_ and Temperature Independent CMOS Voltage Reference Circuit | 2004 | 3 |
| 6 | 2004 | 1 | |
| 7 | 2004 | 2 | |
| 8 | Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO_2(Special Issue on Electronic Displays) | 2002 | 2 |
| 9 | 2002 | 0 | |
| 10 | A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs | 1999 | 7 |
| 11 | Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach (Special Issue on SOI Devices and Their Process Technologies) | 1997 | 4 |
| 12 | Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90゜and 45゜ (Special Issue on Microelectronic Test Structure) | 1996 | 2 |
| 13 | C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO_2 | 1994 | 1 |
| 14 | A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS and Trench-Isolated MOSFETs | 1992 | 4 |
| 15 | 1987 | 27 | |
| 16 | 1987 | 29 | |
| 17 | 1986 | 23 | |
| 18 | Trench Isolation with Boron Implanted Side-Walls for Controlling Narrow-Width Effect of n-MOS Threshold Voltages | 1985 | 1 |
| 19 | Submicron Optical Contrast Enhanced Lithography Using Water-Soluble Materials | 1985 | 1 |
| 20 | 1985 | 15 |
About T. Ohzone
T. Ohzone is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 101 papers that have together received 647 indexed citations. Recurring topics across this work include Semiconductor materials and devices (80 papers), Advancements in Semiconductor Devices and Circuit Design (58 papers), Integrated Circuits and Semiconductor Failure Analysis (31 papers), Silicon Nanostructures and Photoluminescence (15 papers), Thin-Film Transistor Technologies (13 papers), Semiconductor materials and interfaces (11 papers), 3D IC and TSV technologies (8 papers) and Nanowire Synthesis and Applications (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (619 citations), Atomic and Molecular Physics, and Optics (104 citations) and Materials Chemistry (133 citations). T. Ohzone has collaborated with scholars based in Japan and United Kingdom. Frequent co-authors include T. Matsuda, S. Odanaka, Motoyuki Fukumoto, G. Fuse, Takashi Hori, K. Tsuji, T. Hirao, Masaru Sasago, Akihiro Shinohara and S. Horiuchi. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, Japanese Journal of Applied Physics, IEICE Transactions on Electronics and IEEE Transactions on Semiconductor Manufacturing.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.