E. Harari

801 total citations · 1 hit paper
17 papers, 628 citations indexed

About

E. Harari is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Materials Chemistry. According to data from OpenAlex, E. Harari has authored 17 papers receiving a total of 628 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 2 papers in Computer Networks and Communications and 2 papers in Materials Chemistry. Recurrent topics in E. Harari's work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). E. Harari is often cited by papers focused on Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). E. Harari collaborates with scholars based in United States. E. Harari's co-authors include B. S. H. Royce, Jun Yuan, Jinyun Yuan, Chang Chen, L. Schmitz, Thomas J. Russell, Sanjay Mehrotra, K. Stiles and Chi Wah Leung and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

E. Harari

17 papers receiving 582 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Dielectric breakdown in electrically stressed thin films of thermal SiO2

1978 347 citations E. Harari Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Harari United States	11	587	213	74	34	28	17	628
Y. Nissan‐Cohen United States	14	899 1.5×	294 1.4×	72 1.0×	50 1.5×	7 0.3×	21	913
H.A.R. Wegener United States	12	407 0.7×	142 0.7×	132 1.8×	17 0.5×	14 0.5×	38	445
K. Asama Japan	11	334 0.6×	85 0.4×	118 1.6×	25 0.7×	14 0.5×	42	390
Manabu Itsumi Japan	14	564 1.0×	292 1.4×	163 2.2×	31 0.9×	10 0.4×	59	634
W. Langheinrich Germany	10	243 0.4×	93 0.4×	87 1.2×	18 0.5×	28 1.0×	37	332
Chung Len Lee Taiwan	13	522 0.9×	163 0.8×	98 1.3×	48 1.4×	10 0.4×	75	557
E. Holzenkämpfer Germany	6	273 0.5×	244 1.1×	68 0.9×	18 0.5×	46 1.6×	8	354
W. Ting United States	15	669 1.1×	194 0.9×	42 0.6×	77 2.3×	31 1.1×	48	688
M. Armand France	8	243 0.4×	179 0.8×	83 1.1×	58 1.7×	11 0.4×	21	331
Jongho Oh South Korea	7	287 0.5×	158 0.7×	59 0.8×	37 1.1×	8 0.3×	16	333

Countries citing papers authored by E. Harari

Since Specialization

Citations

This map shows the geographic impact of E. Harari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Harari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Harari more than expected).

Fields of papers citing papers by E. Harari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Harari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Harari. The network helps show where E. Harari may publish in the future.

Co-authorship network of co-authors of E. Harari

This figure shows the co-authorship network connecting the top 25 collaborators of E. Harari. A scholar is included among the top collaborators of E. Harari based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Harari. E. Harari is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

17 of 17 papers shown

1.

Harari, E.. (2012). Flash memory — The great disruptor!. 10–15. 11 indexed citations

2.

Harari, E.. (2011). The Non-Volatile Memory Industry - A Personal Journey. 1–4. 3 indexed citations

3.

Mehrotra, Sanjay, et al.. (2003). Serial 9 Mb flash EEPROM for solid state disk applications. 24–25. 3 indexed citations

4.

Harari, E.. (1978). Dielectric breakdown in electrically stressed thin films of thermal SiO2. Journal of Applied Physics. 49(4). 2478–2489. 347 indexed citations breakdown →

5.

Harari, E., et al.. (1978). A 256-bit nonvolatile static RAM. 108–109. 8 indexed citations

6.

Yuan, Jun & E. Harari. (1978). Short-channel C-MOS/SOS technology. IEEE Transactions on Electron Devices. 25(8). 989–995. 10 indexed citations

7.

Yuan, Jinyun & E. Harari. (1977). High Performance Radiation Hard CMOS/SOS Technology. IEEE Transactions on Nuclear Science. 24(6). 2199–2204. 6 indexed citations

8.

Harari, E., et al.. (1977). Radiation-induced leakage currents in n-channel Silicon-on-sapphire MOST's. IEEE Transactions on Electron Devices. 24(11). 1277–1284. 11 indexed citations

9.

Harari, E.. (1977). Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2. Applied Physics Letters. 30(11). 601–603. 96 indexed citations

10.

Harari, E.. (1976). Optical studies of the back-channel leakage in N-channel MOSFET on silicon-on-sapphire (SOS). Applied Physics Letters. 29(1). 25–27. 5 indexed citations

11.

Harari, E., et al.. (1975). Low−temperature irradiation effects in SiO2−insulated MIS devices. Journal of Applied Physics. 46(3). 1310–1317. 48 indexed citations

12.

Russell, Thomas J., B. S. H. Royce, & E. Harari. (1975). Displacement Damage and Radiation Effects in Boron Implanted Sapphire. IEEE Transactions on Nuclear Science. 22(6). 2250–2252. 2 indexed citations

13.

Harari, E., et al.. (1975). Radiation Hardened CMOS/SOS. IEEE Transactions on Nuclear Science. 22(6). 2181–2184. 12 indexed citations

14.

Harari, E., et al.. (1974). Effects of HCL gettering, CR doping and AL⁺ implantation on hardened SiO₂. IEEE Transactions on Nuclear Science. 21(6). 167–171. 12 indexed citations

15.

Harari, E. & B. S. H. Royce. (1973). Oxide Charge Trapping Induced by Ion Implantation in SiO2. IEEE Transactions on Nuclear Science. 20(6). 288–292. 18 indexed citations

16.

Harari, E. & B. S. H. Royce. (1973). The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS Devices. IEEE Transactions on Nuclear Science. 20(6). 280–287. 13 indexed citations

17.

Harari, E. & B. S. H. Royce. (1973). Trap structure of pyrolytic Al2O3 in MOS capacitors. Applied Physics Letters. 22(3). 106–107. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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