Said Rami

512 total citations
21 papers, 225 citations indexed

About

Said Rami is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Biomedical Engineering. According to data from OpenAlex, Said Rami has authored 21 papers receiving a total of 225 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 5 papers in Condensed Matter Physics and 3 papers in Biomedical Engineering. Recurrent topics in Said Rami's work include Radio Frequency Integrated Circuit Design (17 papers), Semiconductor materials and devices (8 papers) and Advanced Power Amplifier Design (5 papers). Said Rami is often cited by papers focused on Radio Frequency Integrated Circuit Design (17 papers), Semiconductor materials and devices (8 papers) and Advanced Power Amplifier Design (5 papers). Said Rami collaborates with scholars based in United States and Greece. Said Rami's co-authors include Surej Ravikumar, Yu Zhang, B. Sell, K. Phoa, Qiang Yu, Georgios C. Dogiamis, Woorim Shin, Thomas W. Brown, Steven Callender and W.R. Eisenstadt and has published in prestigious journals such as IEEE Microwave and Wireless Components Letters, IEEE Solid-State Circuits Letters and 2021 IEEE International Electron Devices Meeting (IEDM).

In The Last Decade

Said Rami

18 papers receiving 224 citations

Peers

Countries citing papers authored by Said Rami

Since Specialization

Citations

This map shows the geographic impact of Said Rami's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Said Rami with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Said Rami more than expected).

Fields of papers citing papers by Said Rami

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Said Rami. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Said Rami. The network helps show where Said Rami may publish in the future.

Co-authorship network of co-authors of Said Rami

This figure shows the co-authorship network connecting the top 25 collaborators of Said Rami. A scholar is included among the top collaborators of Said Rami based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Said Rami. Said Rami is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology 2025 ·Qiang Yu, (unknown), Ali A. Farid, Georgios C. Dogiamis, S. D. Bader, Sai Tang, (unknown), Derek S. Thomson, Linli Xie, M. Radosavljević, (unknown), (unknown), Marc Tiebout, G. Knoblinger, Said Rami, Han Wui Then	0
2	Advancing Next Generation Wireless with Scaled FinFET Technologies 2025 ·Said Rami, (unknown), Ali A. Farid, (unknown), Georgios C. Dogiamis, Surej Ravikumar, Xi Li, (unknown), (unknown)	0
3	Advancements in 300 mm GaN-on-Si Technology With Industry’s First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors 2024 ·IEEE Microwave and Wireless Technology Letters ·(unknown), Ali A. Farid, (unknown), Jeffrey Garrett, (unknown), Samuel James Bader, Ahmad Zubair, Pratik Koirala, (unknown), Andrey Vyatskikh, (unknown), (unknown), M. Radosavljević, Said Rami, Frank O’Mahony, Han Wui Then	5
4	A 25.5-31GHz Power Amplifier Using Enhancement-Mode High-K Dielectric GaN MOS-HEMTs in 300mm GaN-on-Si Technology 2023 ·Qiang Yu, Han Wui Then, (unknown), Derek S. Thomson, Jeffrey Garrett, Said Rami	3
5	A 48dB-SFDR, 43dB-SNDR, 50GS/s 9-bit 2x-interleaved Nyquist DAC in Intel 16 2022 ·Hariprasad Chandrakumar, Thomas W. Brown, (unknown), (unknown), Iwen Huang, Said Rami	2
6	High-Q On-Chip Capacitors Featuring “Self-Inductance Cancellation” for RF and mm-Wave Applications 2022 ·IEEE Microwave and Wireless Components Letters ·(unknown), (unknown), Qiang Yu, (unknown), (unknown), Said Rami, (unknown)	3
7	An F-Band Power Amplifier with Skip-Layer Via Achieving 23.8% PAE in FinFET Technology 2022 ·Qiang Yu, (unknown), (unknown), Georgios C. Dogiamis, Said Rami	11
8	A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology 2022 ·Qiang Yu, (unknown), Han Wui Then, (unknown), M. Radosavljević, (unknown), Pratik Koirala, N. Thomas, (unknown), (unknown), Samuel James Bader, Said Rami	6
9	A 120-Gb/s 100–145-GHz 16-QAM Dual-Band Dielectric Waveguide Interconnect With Package Integrated Diplexers in Intel 16 2022 ·IEEE Solid-State Circuits Letters ·Georgios C. Dogiamis, Thomas W. Brown, (unknown), (unknown), (unknown), Surej Ravikumar, (unknown), (unknown), Said Rami, (unknown)	23
10	A 60-Gbps 108-GHz 16-QAM Dielectric Waveguide Interconnect with Package Integrated Filters 2022 ·2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 ·Georgios C. Dogiamis, Thomas W. Brown, (unknown), (unknown), (unknown), Surej Ravikumar, (unknown), (unknown), Said Rami	5
11	A 48-dB SFDR, 43-dB SNDR, 50-GS/s 9-b 2×-Interleaved Nyquist DAC in Intel 16 2022 ·IEEE Solid-State Circuits Letters ·Hariprasad Chandrakumar, Thomas W. Brown, (unknown), (unknown), Iwen Huang, Said Rami	6
12	Low-Loss On-Chip Passive Circuits Using C4 Layer for RF, mmWave and sub-THz Applications 2022 ·2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 ·(unknown), (unknown), (unknown), (unknown), Georgios C. Dogiamis, (unknown), Ruonan Han, (unknown), (unknown), (unknown), (unknown), (unknown), Surej Ravikumar, Said Rami, (unknown), Eric Karl	1
13	Enabling Hybrid Bonding on Intel Process 2021 ·2021 IEEE International Electron Devices Meeting (IEDM) ·Adel Elsherbini, Kimin Jun, (unknown), (unknown), (unknown), (unknown), (unknown), Zhiguo Qian, (unknown), Shawna M. Liff, (unknown), Jimin Yao, Pilin Liu, C. Pelto, Said Rami, Ajay Balankutty, P. Fischer, (unknown)	27
14	A mmWave Switch Using Novel Back-End-Of-Line (BEOL) in 22nm FinFET Technology 2021 ·Qiang Yu, (unknown), (unknown), (unknown), Surej Ravikumar, Guannan Liu, Said Rami	4
15	An E-Band Power Amplifier Using High Power RF Device with Hybrid Work Function and Oxide Thickness in 22nm Low-Power FinFET 2020 ·Qiang Yu, (unknown), (unknown), Jabeom Koo, S. Morarka, Said Rami, Guannan Liu, Hyung‐Jin Lee	7
16	Implementation of High Power RF Devices with Hybrid Workfunction and OxideThickness in 22nm Low-Power FinFET Technology 2019 ·(unknown), S. Morarka, Said Rami, Qiang Yu, M. Weiß, (unknown), M Armstrong, Cheng‐Yong Su, (unknown), B. Sell, Yu Zhang	13
17	Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology 2018 ·(unknown), Said Rami, Surej Ravikumar, (unknown), K. Phoa, B. Sell, Yu Zhang	74
18	Millimeter wave MOSFET amplitude detector 2010 ·Said Rami, (unknown), W.R. Eisenstadt	6
19	A minimally invasive wideband mixed-mode detector for mm-Wave BIST applications 2010 ·Said Rami, (unknown), W.R. Eisenstadt	4
20	A 90nm Quadrature Generator with Frequency Extension up to 4GHz 2007 ·(unknown), Said Rami	0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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