S. Chakravarthi

1.3k citations

23 papers · 996 indexed · h-index 12

Co-authors: S. Krishnan A.T. Krishnan V. Reddy C. Machala P.R. Chidambaram Paul E. Nicollian C. Bowen J. Antonio Travieso-Rodríguez
Topics: Semiconductor materials and devices (16 papers)Advancements in Semiconductor Devices and Circuit Design (14 papers)Silicon and Solar Cell Technologies (13 papers)
Cited by: Electrical and Electronic Engineering Hardware and Architecture Structural Biology
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: United States

In The Last Decade

S. Chakravarthi

22 papers receiving 958 citations

Peers

Countries citing papers authored by S. Chakravarthi

Since Specialization

Citations

This map shows the geographic impact of S. Chakravarthi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Chakravarthi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Chakravarthi more than expected).

Fields of papers citing papers by S. Chakravarthi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Chakravarthi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Chakravarthi. The network helps show where S. Chakravarthi may publish in the future.

Co-authorship network of co-authors of S. Chakravarthi

This figure shows the co-authorship network connecting the top 25 collaborators of S. Chakravarthi. A scholar is included among the top collaborators of S. Chakravarthi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Chakravarthi. S. Chakravarthi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown 2007 ·Paul E. Nicollian,Anand Krishnan,(unknown),R. Khamankar,S. Chakravarthi,Chris Bowen,(unknown)	15
2	Design of CMOS Transistors to Maximize Circuit FOM Using a Coupled Process and Mixed-Mode Simulation Methodology 2006 ·IEEE Electron Device Letters ·R. Venugopal,S. Chakravarthi,P.R. Chidambaram	13
3	The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics 2006 ·Paul E. Nicollian,A.T. Krishnan,C. Bowen,S. Chakravarthi,(unknown),R. Khamankar	14
4	Dopant diffusion modeling for heteroepitaxial SiGe∕Si devices 2006 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Chakravarthi,P.R. Chidambaram,C. Machala,(unknown)	4
5	Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing 2006 ·IEEE Transactions on Electron Devices ·P.R. Chidambaram,C. Bowen,S. Chakravarthi,C. Machala,R. Wise	141
6	Material dependence of hydrogen diffusion: implications for NBTI degradation 2006 ·A.T. Krishnan,(unknown),S. Chakravarthi,Paul E. Nicollian,V. Reddy,(unknown),R. Khamankar,S. Krishnan	147
7	Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation 2006 ·Microelectronics Reliability ·S. Chakravarthi,A.T. Krishnan,V. Reddy,S. Krishnan	10
8	Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation 2005 ·Journal of Applied Physics ·Puneet Kohli,Amit Kumar C Jain,S. Chakravarthi,H. Bu,Scott T. Dunham,S. Banerjee	5
9	A comprehensive framework for predictive modeling of negative bias temperature instability 2004 ·S. Chakravarthi,A.T. Krishnan,V. Reddy,C. Machala,S. Krishnan	256
10	NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] 2004 ·A.T. Krishnan,V. Reddy,S. Chakravarthi,J. Antonio Travieso-Rodríguez,Samuel John,S. Krishnan	169
11	Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation 2004 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Puneet Kohli,Amitabh Jain,H. Bu,S. Chakravarthi,C. Machala,Scott T. Dunham,Shayak Banerjee	14
12	Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation 2004 ·Materials Science and Engineering B ·Puneet Kohli,S. Chakravarthi,Amitabh Jain,H. Bu,(unknown),Scott T. Dunham,S. Banerjee	5
13	35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS 2004 ·P.R. Chidambaram,(unknown),Lindsey Hall,H. Bu,S. Chakravarthi,(unknown),(unknown),(unknown),(unknown),R. B. Irwin,M.J. Kim,Antonio Rotondaro,C. Machala,(unknown)	65
14	Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions 2003 ·S. Chakravarthi,Puneet Kohli,P.R. Chidambaram,H. Bu,Amit Kumar C Jain,(unknown),C. Machala	7
15	A strategy for enabling predictive TCAD in development of sub-100nm CMOS technologies 2003 ·C. Machala,S. Chakravarthi,(unknown),(unknown),C. Bowen	0
16	Beyond TED: understanding boron shallow junction formation 2002 ·Scott T. Dunham,S. Chakravarthi,(unknown)	1
17	Modeling of Diffusion and Activation of Low Energy Arsenic Implants in Silicon 2002 ·MRS Proceedings ·S. Chakravarthi,(unknown),C. Machala,Amitabh Jain,Xin Zhang	1
18	Modeling of boron deactivation/activation kinetics during ion implant annealing 2002 ·S. Chakravarthi,Scott T. Dunham	1
19	A simple continuum model for boron clustering based on atomistic calculations 2001 ·Journal of Applied Physics ·S. Chakravarthi,Scott T. Dunham	17
20	Modeling of Dopant Diffusion in Silicon 1999 ·IEICE Transactions on Electronics ·Scott T. Dunham,(unknown),S. Chakravarthi	5

About S. Chakravarthi

S. Chakravarthi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics, having authored 23 papers that have together received 996 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon and Solar Cell Technologies (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (939 citations), Hardware and Architecture (39 citations) and Structural Biology (7 citations). S. Chakravarthi has collaborated with scholars based in United States. Frequent co-authors include S. Krishnan, A.T. Krishnan, V. Reddy, C. Machala, P.R. Chidambaram, Paul E. Nicollian, C. Bowen, J. Antonio Travieso-Rodríguez, Samuel John and R. Wise. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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