Rafael Rios

556 total citations
18 papers, 440 citations indexed

About

Rafael Rios is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Rafael Rios has authored 18 papers receiving a total of 440 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in Rafael Rios's work include Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Rafael Rios is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Rafael Rios collaborates with scholars based in United States, Ireland and Germany. Rafael Rios's co-authors include Ian A. Young, Uygar E. Avci, Kelin J. Kuhn, Daniel H. Morris, Dmitri E. Nikonov, Sayed Hasan, R. Kotlyar, Raseong Kim, M. Radosavljević and Sasikanth Manipatruni and has published in prestigious journals such as International Journal for Numerical Methods in Engineering, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

Rafael Rios

17 papers receiving 425 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Rafael Rios United States	10	426	108	37	35	9	18	440
Heng Wu United States	11	365 0.9×	130 1.2×	44 1.2×	38 1.1×	10 1.1×	41	382
Narain Arora Germany	8	566 1.3×	82 0.8×	39 1.1×	41 1.2×	23 2.6×	15	579
Olivier Faynot France	15	821 1.9×	122 1.1×	44 1.2×	27 0.8×	24 2.7×	80	841
C. Ortolland Belgium	11	380 0.9×	55 0.5×	21 0.6×	61 1.7×	10 1.1×	37	392
K. Matsuzawa Japan	10	357 0.8×	41 0.4×	34 0.9×	86 2.5×	8 0.9×	42	388
C. Kuo United States	5	499 1.2×	74 0.7×	29 0.8×	29 0.8×	19 2.1×	9	516
Hamilton Carrillo-Nuñez United Kingdom	11	367 0.9×	124 1.1×	49 1.3×	90 2.6×	8 0.9×	41	403
R.A. Bianchi France	11	410 1.0×	87 0.8×	13 0.4×	25 0.7×	11 1.2×	20	431
T. Sekigawa Japan	14	896 2.1×	128 1.2×	34 0.9×	61 1.7×	15 1.7×	44	917
Jenn-Gang Chern United States	7	420 1.0×	66 0.6×	30 0.8×	45 1.3×	23 2.6×	13	436

Countries citing papers authored by Rafael Rios

Since Specialization

Citations

This map shows the geographic impact of Rafael Rios's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rafael Rios with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rafael Rios more than expected).

Fields of papers citing papers by Rafael Rios

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rafael Rios. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rafael Rios. The network helps show where Rafael Rios may publish in the future.

Co-authorship network of co-authors of Rafael Rios

This figure shows the co-authorship network connecting the top 25 collaborators of Rafael Rios. A scholar is included among the top collaborators of Rafael Rios based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Rafael Rios. Rafael Rios is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

18 of 18 papers shown

Rios, Rafael, et al.. (2021). A Physically Based Compact Model for IGZO Transistors. IEEE Transactions on Electron Devices. 68(4). 1664–1669. 6 indexed citations

Rios, Rafael, et al.. (2018). A New Paradigm for Fault-Tolerant Computing with Interconnect Crosstalks. 1–6. 7 indexed citations

Kotlyar, R., Rafael Rios, C. Weber, et al.. (2015). Distributive Quasi-Ballistic Drift Diffusion Model Including Effects of Stress and High Driving Field. IEEE Transactions on Electron Devices. 62(3). 743–750. 16 indexed citations

Avci, Uygar E., B. Chu-Kung, Ashish Agrawal, et al.. (2015). Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET. 34.5.1–34.5.4. 36 indexed citations

Monaghan, Scott, Éamon O’Connor, Rafael Rios, et al.. (2014). Capacitance and Conductance for an MOS System in Inversion, with Oxide Capacitance and Minority Carrier Lifetime Extractions. IEEE Transactions on Electron Devices. 61(12). 4176–4185. 9 indexed citations

Rios, Rafael, et al.. (2014). Improved MOSFET characterization technique for single channel length, scaled transistors. Solid-State Electronics. 104. 44–46. 5 indexed citations

Morris, Daniel H., Uygar E. Avci, Rafael Rios, & Ian A. Young. (2014). Design of Low Voltage Tunneling-FET Logic Circuits Considering Asymmetric Conduction Characteristics. IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 4(4). 380–388. 68 indexed citations

Monaghan, Scott, Éamon O’Connor, Ian M. Povey, et al.. (2013). Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(1). 6 indexed citations

Avci, Uygar E., Daniel H. Morris, Sayed Hasan, et al.. (2013). Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at L<inf>g</inf>=13nm, including P-TFET and variation considerations. 33.4.1–33.4.4. 37 indexed citations

10.

Avci, Uygar E., Sayed Hasan, Dmitri E. Nikonov, et al.. (2012). Understanding the feasibility of scaled III–V TFET for logic by bridging atomistic simulations and experimental results. 183–184. 40 indexed citations

11.

Kuhn, Kelin J., Uygar E. Avci, M.D. Giles, et al.. (2012). The ultimate CMOS device and beyond. 8.1.1–8.1.4. 57 indexed citations

12.

Avci, Uygar E., Rafael Rios, Kelin J. Kuhn, & Ian A. Young. (2011). Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic. Symposium on VLSI Technology. 124–125. 96 indexed citations

13.

Avci, Uygar E., Rafael Rios, Kelin J. Kuhn, & Ian A. Young. (2011). Comparison of power and performance for the TFET and MOSFET and considerations for P-TFET. 869–872. 35 indexed citations

14.

Alavi, M. & Rafael Rios. (1998). Effect of technology scaling on MOS electrical characterization. 39–45.

15.

Arora, Narain, Rafael Rios, & D.A. Antoniadis. (1995). Capacitance Modeling for Deep Submicron Thin Gate Oxide MOSFETs. 569–572. 6 indexed citations

16.

Arora, Narain, Rafael Rios, & Cheng‐Liang Huang. (1994). Impact of Polysilicon Depletion Effect on Circuit Performance for 0.35μ CMOS Technology. European Solid-State Device Research Conference. 369–372. 1 indexed citations

17.

Rios, Rafael, et al.. (1991). A three-dimensional device simulator for radiation-hard MOS-SOS transistors. Solid-State Electronics. 34(8). 853–859. 4 indexed citations

18.

Rios, Rafael, et al.. (1988). Vector potential formulations and finite element trial functions. International Journal for Numerical Methods in Engineering. 26(1). 95–108. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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