R. Rios

1.7k total citations
27 papers, 1.3k citations indexed

About

R. Rios is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, R. Rios has authored 27 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in R. Rios's work include Advancements in Semiconductor Devices and Circuit Design (24 papers), Semiconductor materials and devices (23 papers) and Silicon Carbide Semiconductor Technologies (10 papers). R. Rios is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (24 papers), Semiconductor materials and devices (23 papers) and Silicon Carbide Semiconductor Technologies (10 papers). R. Rios collaborates with scholars based in United States and Austria. R. Rios's co-authors include T. Linton, R. Chau, M. Doczy, Suman Datta, B. Jin, J. Kavalieros, S.A. Hareland, Kelin J. Kuhn, N.D. Arora and M Armstrong and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

R. Rios

26 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Rios United States 15 1.2k 288 96 51 27 27 1.3k
D. K. Mohata United States 19 1.1k 0.9× 311 1.1× 128 1.3× 58 1.1× 15 0.6× 31 1.1k
M. Dehan Belgium 17 1.1k 0.9× 159 0.6× 44 0.5× 19 0.4× 23 0.9× 58 1.1k
G.D.J. Smit Netherlands 15 847 0.7× 91 0.3× 123 1.3× 55 1.1× 25 0.9× 39 893
C. Kuo United States 7 1.3k 1.0× 224 0.8× 117 1.2× 121 2.4× 27 1.0× 13 1.4k
R. Ritzenthaler Belgium 17 1.1k 0.9× 116 0.4× 76 0.8× 83 1.6× 14 0.5× 121 1.1k
R.J. Havens Netherlands 17 1.1k 0.8× 136 0.5× 69 0.7× 27 0.5× 26 1.0× 45 1.1k
K.F. Lee United States 7 1.0k 0.8× 219 0.8× 66 0.7× 125 2.5× 10 0.4× 17 1.0k
Kyoung Hwan Yeo South Korea 16 782 0.6× 396 1.4× 58 0.6× 61 1.2× 6 0.2× 32 803
Hamed F. Dadgour United States 14 663 0.5× 131 0.5× 118 1.2× 47 0.9× 33 1.2× 19 685
T. Sekigawa Japan 14 896 0.7× 128 0.4× 61 0.6× 34 0.7× 15 0.6× 44 917

Countries citing papers authored by R. Rios

Since Specialization
Citations

This map shows the geographic impact of R. Rios's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Rios with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Rios more than expected).

Fields of papers citing papers by R. Rios

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Rios. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Rios. The network helps show where R. Rios may publish in the future.

Co-authorship network of co-authors of R. Rios

This figure shows the co-authorship network connecting the top 25 collaborators of R. Rios. A scholar is included among the top collaborators of R. Rios based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Rios. R. Rios is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kotlyar, R., Uygar E. Avci, S. Cea, et al.. (2013). Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors. Applied Physics Letters. 102(11). 81 indexed citations
2.
Rios, R., M Armstrong, A. Budrevich, et al.. (2011). Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm. IEEE Electron Device Letters. 32(9). 1170–1172. 266 indexed citations
3.
Sw, Lee, et al.. (2006). Halo Doping: Physical Effects and Compact Modeling. TechConnect Briefs. 3(2006). 644–647. 2 indexed citations
4.
Mudanai, S., et al.. (2006). Analytical Modeling of Output Conductance in Long-Channel Halo-Doped MOSFETs. IEEE Transactions on Electron Devices. 53(9). 2091–2097. 15 indexed citations
5.
Rios, R., et al.. (2005). Comparison of Surface Potential and Charge-based MOSFET Core Models. TechConnect Briefs. 13–18.
6.
Rios, R., et al.. (2005). An efficient surface potential solution algorithm for compact MOSFET models. 755–758. 26 indexed citations
7.
Watts, Josef, C.C. Enz, Carlos Galup‐Montoro, et al.. (2005). Advanced Compact Models for MOSFETs. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 3–12. 41 indexed citations
8.
Doyle, Barry M., B. I. Boyanov, Suman Datta, et al.. (2004). Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout. 133–134. 163 indexed citations
9.
Rios, R., et al.. (2003). A three-transistor threshold voltage model for halo processes. 113–116. 34 indexed citations
10.
Doyle, B.S., Suman Datta, M. Doczy, et al.. (2003). High performance fully-depleted tri-gate CMOS transistors. IEEE Electron Device Letters. 24(4). 263–265. 324 indexed citations
11.
12.
Rios, R., et al.. (2002). A general partition scheme for gate leakage current suitable for MOSFET compact models. 13.3.1–13.3.4. 22 indexed citations
13.
Rios, R., et al.. (2002). Radiation effects in fully-depleted CMOS/SOS. 44–45. 1 indexed citations
14.
15.
Mathew, Sanu, Ram Krishnamurthy, Mark Anders, et al.. (2001). Sub-500-ps 64-b ALUs in 0.18-μm SOI/bulk CMOS: design and scaling trends. IEEE Journal of Solid-State Circuits. 36(11). 1636–1646. 40 indexed citations
16.
Rios, R., et al.. (1996). Surge arresters. Protecting equipment from heatstroke. IEEE Potentials. 15(1). 34–36. 1 indexed citations
17.
Huang, Cheng‐Liang, et al.. (1996). An accurate gate length extraction method for sub-quarter micron MOSFET's. IEEE Transactions on Electron Devices. 43(6). 958–964. 8 indexed citations
18.
Rios, R., et al.. (1995). A B-splines Regression Technique to Determine One-Dimensional MOS Doping Profiles. European Solid-State Device Research Conference. 191–194. 2 indexed citations
19.
Rios, R., N.D. Arora, & Cheng‐Liang Huang. (1994). An analytic polysilicon depletion effect model for MOSFETs. IEEE Electron Device Letters. 15(4). 129–131. 38 indexed citations
20.
Arora, N.D., et al.. (1994). PCIM: a physically based continuous short-channel IGFET model for circuit simulation. IEEE Transactions on Electron Devices. 41(6). 988–997. 69 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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