Raymond N. Vrtis

895 total citations
31 papers, 709 citations indexed

About

Raymond N. Vrtis is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, Raymond N. Vrtis has authored 31 papers receiving a total of 709 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 19 papers in Electronic, Optical and Magnetic Materials and 11 papers in Mechanics of Materials. Recurrent topics in Raymond N. Vrtis's work include Copper Interconnects and Reliability (19 papers), Semiconductor materials and devices (18 papers) and Metal and Thin Film Mechanics (10 papers). Raymond N. Vrtis is often cited by papers focused on Copper Interconnects and Reliability (19 papers), Semiconductor materials and devices (18 papers) and Metal and Thin Film Mechanics (10 papers). Raymond N. Vrtis collaborates with scholars based in United States, Japan and India. Raymond N. Vrtis's co-authors include Stephen J. Lippard, Simon G. Bott, Ch. Pulla Rao, David L. Clark, Alfred P. Sattelberger, David A. Roberts, Alvin L. S. Loke, J. T. Wetzel, P. H. Townsend and S.S. Wong and has published in prestigious journals such as Journal of the American Chemical Society, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

Raymond N. Vrtis

31 papers receiving 664 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Raymond N. Vrtis United States 16 310 290 236 203 184 31 709
Chongying Xu United States 17 308 1.0× 299 1.0× 273 1.2× 142 0.7× 278 1.5× 44 795
Seigi Suh United States 15 409 1.3× 152 0.5× 147 0.6× 165 0.8× 393 2.1× 22 692
Jason R. Babcock United States 15 315 1.0× 395 1.4× 231 1.0× 81 0.4× 397 2.2× 26 880
John E. Gozum United States 10 133 0.4× 193 0.7× 170 0.7× 62 0.3× 240 1.3× 14 526
Vladislav V. Krisyuk Russia 16 220 0.7× 231 0.8× 122 0.5× 232 1.1× 339 1.8× 72 642
Sandro Pagano Germany 17 260 0.8× 168 0.6× 568 2.4× 196 1.0× 677 3.7× 25 1.0k
James W. Proscia United States 10 239 0.8× 120 0.4× 82 0.3× 58 0.3× 227 1.2× 17 429
Shujuan Lin China 13 97 0.3× 191 0.7× 179 0.8× 56 0.3× 258 1.4× 43 570
E.P. Turevskaya Russia 17 120 0.4× 198 0.7× 189 0.8× 67 0.3× 370 2.0× 36 588
M.J. Saly United States 12 372 1.2× 105 0.4× 83 0.4× 131 0.6× 300 1.6× 22 539

Countries citing papers authored by Raymond N. Vrtis

Since Specialization
Citations

This map shows the geographic impact of Raymond N. Vrtis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Raymond N. Vrtis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Raymond N. Vrtis more than expected).

Fields of papers citing papers by Raymond N. Vrtis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Raymond N. Vrtis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Raymond N. Vrtis. The network helps show where Raymond N. Vrtis may publish in the future.

Co-authorship network of co-authors of Raymond N. Vrtis

This figure shows the co-authorship network connecting the top 25 collaborators of Raymond N. Vrtis. A scholar is included among the top collaborators of Raymond N. Vrtis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Raymond N. Vrtis. Raymond N. Vrtis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mallikarjunan, Anupama, Laura M. Matz, Raymond N. Vrtis, et al.. (2011). Silicon precursor development for advanced dielectric barriers for VLSI technology. Microelectronic Engineering. 92. 83–85. 23 indexed citations
2.
O’Neill, Mark L., Lin‐Shu Du, Brian K. Peterson, et al.. (2007). Formation of Porous Organosilicate Glasses Produced by PECVD and UV Treatment. MRS Proceedings. 990. 2 indexed citations
3.
O’Neill, Mark L., Brian K. Peterson, Raymond N. Vrtis, et al.. (2006). Impact of Pore Size and Morphology of Porous Organosilicate Glasses on Integrated Circuit Manufacturing. MRS Proceedings. 914. 9 indexed citations
4.
O’Neill, Mark L., et al.. (2003). Optimized Materials Properties for Organosilicate Glasses Produced by Plasma-Enhanced Chemical Vapor Deposition. MRS Proceedings. 766. 6 indexed citations
5.
6.
White, John, et al.. (1999). Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivated Si(100). Thin Solid Films. 349(1-2). 230–237. 17 indexed citations
7.
Loke, Alvin L. S., S.S. Wong, N. Talwalkar, et al.. (1999). Evaluation of Copper Penetration in Low-κ Polymer Dielectrics by Bias-Temperature Stress. MRS Proceedings. 565. 6 indexed citations
8.
Loke, Alvin L. S., S.S. Wong, N. Talwalkar, et al.. (1999). Evaluation of Copper Penetration in Low-κ Polymer Dielectrics by Bias-Temperature Stress. MRS Proceedings. 564. 1 indexed citations
9.
Luan, H.F., et al.. (1999). Ultra Thin High Quality Ta2O5Gate Dielectrics Prepared byIn-situRapid Thermal Processing. MRS Proceedings. 567. 20 indexed citations
10.
Loke, Alvin L. S., J. T. Wetzel, P. H. Townsend, et al.. (1999). Kinetics of copper drift in low-κ polymer interlevel dielectrics. IEEE Transactions on Electron Devices. 46(11). 2178–2187. 105 indexed citations
11.
Pylant, E. D., et al.. (1998). Ultrathin Ta2O5 film growth by chemical vapor deposition of Ta(N(CH3)2)5 and O2 on bare and SiOxNy-passivated Si(100) for gate dielectric applications. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(3). 1670–1675. 33 indexed citations
12.
Wong, S.S., et al.. (1998). Electrical Reliability of Cu and Low-KDielectric Integration. MRS Proceedings. 511. 8 indexed citations
13.
Sun, Yong, et al.. (1998). Chemical vapor deposition of ultrathin Ta2O5 films using Ta[N(CH3)2]5. Applied Physics Letters. 72(10). 1187–1189. 40 indexed citations
14.
Vrtis, Raymond N., et al.. (1996). Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications. MRS Proceedings. 443. 24 indexed citations
15.
Raaijmakers, Ivo J., et al.. (1992). MOCVD-TiN Barrier Layers for ULSI Applications. MRS Proceedings. 260. 5 indexed citations
16.
Vrtis, Raymond N., Simon G. Bott, & Stephen J. Lippard. (1992). Linear carbonyl-bridged, dinuclear tantalum siloxycarbyne complexes. Organometallics. 11(1). 270–277. 17 indexed citations
17.
Vrtis, Raymond N. & Stephen J. Lippard. (1990). Reductive Coupling of Carbon Monoxide and Alkyl Isocyanide Ligands in Early Transition Metal Complexes: A Review. Israel Journal of Chemistry. 30(4). 331–341. 32 indexed citations
18.
Clark, David L., Alfred P. Sattelberger, Simon G. Bott, & Raymond N. Vrtis. (1989). Lewis base adducts of uranium triiodide: a new class of synthetically useful precursors for trivalent uranium chemistry. Inorganic Chemistry. 28(10). 1771–1773. 98 indexed citations
19.
Vrtis, Raymond N., Ch. Pulla Rao, Simon G. Bott, & Stephen J. Lippard. (1988). Synthesis and stabilization of tantalum-coordinated dihydroxyacetylene from two reductively coupled carbon monoxide ligands. Journal of the American Chemical Society. 110(22). 7564–7566. 32 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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