M. Lemberger

1.5k total citations · 1 hit paper
43 papers, 1.3k citations indexed

About

M. Lemberger is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Lemberger has authored 43 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Lemberger's work include Semiconductor materials and devices (36 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). M. Lemberger is often cited by papers focused on Semiconductor materials and devices (36 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). M. Lemberger collaborates with scholars based in Germany, Bulgaria and Switzerland. M. Lemberger's co-authors include Anton J. Bauer, L. Frey, Jonas Sundqvist, U. Schröder, Johannes Müller, L. Wilde, A. Paskaleva, T. S. Böscke, P. Kücher and U. Böttger and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Small.

In The Last Decade

M. Lemberger

42 papers receiving 1.2k citations

Hit Papers

Ferroelectricity in yttrium-doped hafnium oxide 2011 2026 2016 2021 2011 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Lemberger Germany 16 1.2k 785 110 92 53 43 1.3k
Laegu Kang United States 12 1.3k 1.1× 509 0.6× 149 1.4× 146 1.6× 43 0.8× 27 1.3k
Moonju Cho South Korea 22 1.5k 1.3× 619 0.8× 152 1.4× 95 1.0× 48 0.9× 59 1.6k
D. Roan United States 14 1.1k 0.9× 417 0.5× 146 1.3× 87 0.9× 24 0.5× 20 1.1k
M. W. Stoker United States 13 631 0.5× 411 0.5× 108 1.0× 51 0.6× 61 1.2× 28 765
Antonio Rotondaro United States 16 927 0.8× 223 0.3× 150 1.4× 75 0.8× 49 0.9× 54 974
Yongjoo Jeon United States 13 765 0.6× 329 0.4× 107 1.0× 91 1.0× 30 0.6× 21 832
L. Lamagna Italy 18 642 0.5× 468 0.6× 126 1.1× 104 1.1× 57 1.1× 45 729
S.A. Campbell United States 14 576 0.5× 262 0.3× 131 1.2× 90 1.0× 85 1.6× 31 661
A. Mason United States 15 536 0.5× 504 0.6× 160 1.5× 53 0.6× 94 1.8× 37 673
Baofu Hu China 15 475 0.4× 596 0.8× 78 0.7× 68 0.7× 47 0.9× 32 684

Countries citing papers authored by M. Lemberger

Since Specialization
Citations

This map shows the geographic impact of M. Lemberger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Lemberger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Lemberger more than expected).

Fields of papers citing papers by M. Lemberger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Lemberger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Lemberger. The network helps show where M. Lemberger may publish in the future.

Co-authorship network of co-authors of M. Lemberger

This figure shows the co-authorship network connecting the top 25 collaborators of M. Lemberger. A scholar is included among the top collaborators of M. Lemberger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Lemberger. M. Lemberger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Paskaleva, A., Wenke Weinreich, Anton J. Bauer, M. Lemberger, & L. Frey. (2014). Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time. Materials Science in Semiconductor Processing. 29. 124–131. 9 indexed citations
2.
Weinreich, Wenke, L. Wilde, Johannes Müller, et al.. (2012). Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(1). 47 indexed citations
3.
Weinreich, Wenke, Shariq Ahmed, Konrad Seidel, et al.. (2012). Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(1). 64 indexed citations
4.
Lemberger, M., P. Petrík, David G. Seiler, et al.. (2011). Atomic Layer Deposited Al[sub 2]O[sub 3] as Characterized Reference Samples for Nanolayer Metrology. AIP conference proceedings. 193–197. 1 indexed citations
5.
Weis, Sebastian, Michael P. M. Jank, M. Lemberger, et al.. (2011). Conduction Mechanisms and Environmental Sensitivity of Solution‐Processed Silicon Nanoparticle Layers for Thin‐Film Transistors. Small. 7(20). 2853–2857. 22 indexed citations
6.
Rommel, Mathias, A. Paskaleva, Tobias Erlbacher, et al.. (2010). (Invited) Electrical Scanning Probe Microscopy Techniques for the Detailed Characterization of High-k Dielectric Layers. ECS Transactions. 28(2). 139–156. 4 indexed citations
7.
Weinreich, Wenke, R. Reiche, M. Lemberger, et al.. (2009). Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films. Microelectronic Engineering. 86(7-9). 1826–1829. 58 indexed citations
8.
Bauer, Anton J., M. Lemberger, Tobias Erlbacher, & Wenke Weinreich. (2008). High-K: Latest Developments and Perspectives. Materials science forum. 573-574. 165–180. 5 indexed citations
9.
Rommel, Mathias, M. Lemberger, Tobias Erlbacher, et al.. (2008). Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics. Applied Physics Letters. 92(25). 72 indexed citations
10.
Paskaleva, A., et al.. (2008). Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy. Journal of Applied Physics. 104(2). 21 indexed citations
11.
Erlbacher, Tobias, Michael P. M. Jank, M. Lemberger, Anton J. Bauer, & H. Ryssel. (2008). HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories. Thin Solid Films. 516(21). 7727–7731. 5 indexed citations
12.
Thiede, Tobias, Harish Parala, Knud Reuter, et al.. (2008). Evaluation of MOCVD Grown Niobium Nitride Films as Gate Electrode for Advanced CMOS Technology. ECS Transactions. 16(5). 229–234. 4 indexed citations
13.
Lemberger, M., Stefan Thiemann, A. Baunemann, et al.. (2007). MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications. Surface and Coatings Technology. 201(22-23). 9154–9158. 14 indexed citations
14.
Paskaleva, A., M. Lemberger, & Anton J. Bauer. (2007). Stress induced leakage current mechanism in thin Hf-silicate layers. Applied Physics Letters. 90(4). 11 indexed citations
15.
Baunemann, A., M. Lemberger, Anton J. Bauer, Harish Parala, & Roland A. Fischer. (2007). MOCVD of TaN Using the All‐Nitrogen‐Coordinated Precursors [Ta(NEtMe)3(N‐tBu)], [Ta(NEtMe)(N‐tBu){C(N‐iPr)2(NEtMe)}2], and [Ta(NMeEt)2(N‐tBu){Me2N‐N(SiMe3)}]. Chemical Vapor Deposition. 13(2-3). 77–83. 15 indexed citations
16.
Paskaleva, A., Anton J. Bauer, & M. Lemberger. (2005). Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films. Microelectronics Reliability. 45(7-8). 1124–1133. 2 indexed citations
17.
Paskaleva, A., Anton J. Bauer, M. Lemberger, & Stefan Zürcher. (2004). Different current conduction mechanisms through thin high-k HfxTiySizO films due to the varying Hf to Ti ratio. Journal of Applied Physics. 95(10). 5583–5590. 64 indexed citations
19.
Zürcher, Stefan, M. Morstein, Nicholas D. Spencer, M. Lemberger, & Anton J. Bauer. (2002). New Single-Source Precursors for the MOCVD of High-κ Dielectric Zirconium Silicates to Replace SiO2 in Semiconducting Devices. Chemical Vapor Deposition. 8(4). 171–171. 19 indexed citations
20.
Jank, Michael P. M., et al.. (2001). Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. Microelectronics Reliability. 41(7). 987–990. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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