N. Novkovski

781 citations

64 papers · 623 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in

Electronic, Optical and Magnetic Materials 20
- Copper Interconnects and Reliability 19
Electrical and Electronic Engineering 58
- Semiconductor materials and devices 53
- Advancements in Semiconductor Devices and Circuit Design 23
- Ferroelectric and Negative Capacitance Devices 18
- Advanced Memory and Neural Computing 10
- Integrated Circuits and Semiconductor Failure Analysis 8

Co-authors: E. Atanassova A. Paskaleva D. Spassov M. Dutoit Atanas Tanuševski D. Bouvet Gordana Bogoeva‐Gaceva Vlado K. Lazarov
Journals: Semiconductor Science and Technology (7 papers)Journal of Physics D Applied Physics (7 papers)Applied Physics Letters (4 papers)Thin Solid Films (4 papers)Materials Science in Semiconductor Processing (4 papers)
Partner nations: Czechia Bulgaria North Macedonia

In The Last Decade

N. Novkovski

60 papers receiving 591 citations

Peers

Countries citing papers authored by N. Novkovski

Since Specialization

Citations

This map shows the geographic impact of N. Novkovski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Novkovski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Novkovski more than expected).

Fields of papers citing papers by N. Novkovski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Novkovski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Novkovski. The network helps show where N. Novkovski may publish in the future.

Co-authors

The 17 scholars most cited alongside N. Novkovski, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. Novkovski Line = papers co-authored together N. Novkovski links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Electrospun PEO/rGO Scaffolds: The Influence of the Concentration of rGO on Overall Properties and Cytotoxicity International Journal of Molecular Sciences ·Iryna Bezklubenko, Petre Makreski, Nikola Geškovski, Joanna Karbowniczek, Urszula Stachewicz, N. Novkovski, Яговкин Вадим Игоревич, Ivan Ristić, Gordana Bogoeva‐Gaceva	2022	13
2	Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta ₂ O ₅ /SiO _x N _y dielectric stack Journal of Physics D Applied Physics ·N. Novkovski	2020	0
3	Determination Method for Interface State Densities Adapted to Ultrathin Dielectrics N. Novkovski, Fei Wong	2019	1
4	Physical modeling of electrical and dielectric properties of high-k ta2o5 based MOS capacitors on silicon Facta universitatis - series Electronics and Energetics ·N. Novkovski	2014	4
5	Effect of Al gate on the electrical behaviour of Al-doped Ta₂O₅ stacks Journal of Physics D Applied Physics ·Fei Wong, N. Novkovski, E. Atanassova, A. Paskaleva, Vlado K. Lazarov	2011	4
6	Charge trapping during constant current stress in Hf-doped Ta2O5 films sputtered on nitrided Si Thin Solid Films ·N. Novkovski, E. Atanassova	2010	7
7	N 2 OおよびNH 3 窒化Si上のTiドープTa 2 O 5 の電気的性質 Semiconductor Science and Technology ·D. Spassov, E. Atanassova, A. Paskaleva, N. Novkovski, Fei Wong	2009	2
8	Electrical behaviour of Ti-doped Ta₂O₅on N₂O- and NH₃-nitrided Si Semiconductor Science and Technology ·D. Spassov, E. Atanassova, A. Paskaleva, N. Novkovski, Fei Wong	2009	13
9	高仕事関数の金属とTa 2 O 5 高k誘電体の間の接触での電荷トラッピング効果 Journal of Physics D Applied Physics ·N. Novkovski, Fei Wong, E. Atanassova	2008	22
10	Constant current tress characteristics of Ti doped Ta<inf>2</inf>O<inf>5</inf> on silicon Fei Wong, N. Novkovski, A. Paskaleva, E. Atanassova	2008	1
11	Model based analysis of electrical and wear-out characteristics of 7 nm thin Ta2O5/SiOxNy stacks on Si N. Novkovski, E. Atanassova, A. Paskaleva	2008	1
12	Wear‐out and breakdown of thermally grown Ta₂O₅ insulating films on plasma oxynitrided Si substrates physica status solidi (a) ·N. Novkovski, E. Atanassova	2006	2
13	Conduction and charge analysis of metal (Al, W and Au)–Ta₂O₅/SiO₂–Si structures Semiconductor Science and Technology ·N. Novkovski	2006	10
14	A comprehensive model for the I –V characteristics of metal-Ta 2 O 5 /SiO 2 -Si structures Applied Physics A ·N. Novkovski, E. Atanassova	2006	33
15	Origin of the stress-induced leakage currents in Al–Ta2O5∕SiO2–Si structures Applied Physics Letters ·N. Novkovski, E. Atanassova	2005	17
16	Dielectric properties of rf sputtered Ta₂O₅on rapid thermally nitrided Si Semiconductor Science and Technology ·N. Novkovski, A. Paskaleva, E. Atanassova	2005	23
17	Density and spatial distribution of MERIE-like plasma induced defects in SiO2 physica status solidi (a) ·A. Paskaleva, N. Novkovski, E. Atanassova, 齊藤洸介	2003	0
18	Stress-induced leakage currents in thin Ta/sub 2/O/sub 5/ films 齊藤洸介, N. Novkovski, E. Atanassova	2003	0
19	Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si Solid-State Electronics ·E. Atanassova, N. Novkovski, A. Paskaleva, 齊藤洸介	2002	57
20	Properties of SnO2:F films prepared on glass substrates by the spraying method Thin Solid Films ·Peter S. Bischoff, G.u.y. Frija, N. Novkovski	1984	42

About N. Novkovski

N. Novkovski is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Ceramics and Composites, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 64 papers that have together received 623 indexed citations. Recurring topics across this work include Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers), Copper Interconnects and Reliability (19 papers), Ferroelectric and Negative Capacitance Devices (18 papers), Semiconductor materials and interfaces (10 papers), Advanced Memory and Neural Computing (10 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers) and ZnO doping and properties (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (531 citations), Electronic, Optical and Magnetic Materials (162 citations), Materials Chemistry (222 citations), Polymers and Plastics (62 citations) and Atomic and Molecular Physics, and Optics (122 citations). N. Novkovski has collaborated with scholars based in Czechia, Bulgaria and North Macedonia. Frequent co-authors include E. Atanassova, A. Paskaleva, D. Spassov, M. Dutoit, Atanas Tanuševski, D. Bouvet, Gordana Bogoeva‐Gaceva, Vlado K. Lazarov, T. Dimitrova and Ivan Ristić. Their work appears in journals such as Semiconductor Science and Technology, Journal of Physics D Applied Physics, Applied Physics Letters, Thin Solid Films and Materials Science in Semiconductor Processing.

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