Houqiang Fu

3.4k citations

128 papers · 2.5k indexed · h-index 31

Condensed Matter Physics top 1%
Electronic, Optical and Magnetic Materials top 2%
Electrical and Electronic Engineering top 5%
Materials Chemistry top 5%
Atomic and Molecular Physics, and Optics top 5%

Co-authors: Yuji Zhao Xuanqi Huang Kai Fu Hong Chen Jossue Montes Zhijian Lu Tsung-Han Yang Izak Baranowski
Topics: GaN-based semiconductor devices and materials (92 papers)Ga2O3 and related materials (69 papers)ZnO doping and properties (40 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: SHILAP Revista de lepidopterologíaApplied Physics Letters Journal of Applied Physics
Partner nations: United States China Italy

In The Last Decade

Houqiang Fu

124 papers receiving 2.4k citations

Peers

Countries citing papers authored by Houqiang Fu

Since Specialization

Citations

This map shows the geographic impact of Houqiang Fu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Houqiang Fu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Houqiang Fu more than expected).

Fields of papers citing papers by Houqiang Fu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Houqiang Fu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Houqiang Fu. The network helps show where Houqiang Fu may publish in the future.

Co-authorship network of co-authors of Houqiang Fu

This figure shows the co-authorship network connecting the top 25 collaborators of Houqiang Fu. A scholar is included among the top collaborators of Houqiang Fu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Houqiang Fu. Houqiang Fu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination 2025 ·IEEE Electron Device Letters ·Dawei Wang,(unknown),Dinusha Herath Mudiyanselage,(unknown),(unknown),(unknown),Izak Baranowski,(unknown),Dragica Vasileska,Kai Fu,Houqiang Fu	3
2	Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric 2024 ·Applied Physics Letters ·(unknown),Xiang Zhang,(unknown),(unknown),Tanguy Terlier,Dinusha Herath Mudiyanselage,Dawei Wang,(unknown),(unknown),(unknown),Cheng Chang,(unknown),R. J. Nemanich,Yuji Zhao,Pulickel M. Ajayan,Houqiang Fu	8
3	High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates 2024 ·Applied Physics Express ·(unknown),Dinusha Herath Mudiyanselage,Dawei Wang,(unknown),Houqiang Fu	10
4	Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature 2023 ·Applied Physics Letters ·(unknown),Guohao Yu,(unknown),Xuguang Deng,Li Zhang,(unknown),Guang Yang,Liguo Zhang,(unknown),Xiang Kan,Xuan Zhang,Houqiang Fu,Zhongming Zeng,King‐Yuen Wong,Yong Cai,Baoshun Zhang	1
5	Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance 2023 ·IEEE Transactions on Electron Devices ·(unknown),Carlo De Santi,Matteo Buffolo,(unknown),Xuanqi Huang,Houqiang Fu,(unknown),Yuji Zhao,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	0
6	Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells 2023 ·IEEE Journal of Photovoltaics ·(unknown),(unknown),Fabiana Rampazzo,Carlo De Santi,Matteo Buffolo,G. Mura,Francesca Rossi,(unknown),Houqiang Fu,Hong Chen,Yuji Zhao,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	1
7	Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer 2022 ·Journal of Physics D Applied Physics ·(unknown),Haochen Zhang,Yue Sun,Lei Yang,(unknown),Kun Liang,Dawei Wang,Houqiang Fu,Haiding Sun	6
8	The Mechanism of Performance Variations in MoS₂ Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory 2022 ·IEEE Transactions on Electron Devices ·(unknown),(unknown),(unknown),Xingqiang Liu,Xuming Zou,Hao Huang,Dinusha Herath Mudiyanselage,Houqiang Fu,Bei Jiang,Ao Liu,Zhenyu Yang	11
9	Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination 2021 ·IEEE Journal of the Electron Devices Society ·Dinusha Herath Mudiyanselage,Dawei Wang,Houqiang Fu	16
10	The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices 2021 ·Applied Physics Letters ·Kai Fu,Houqiang Fu,Xuguang Deng,(unknown),Hanxiao Liu,(unknown),(unknown),D. C. Messina,(unknown),(unknown),Chen Yang,Tsung-Han Yang,(unknown),Jingan Zhou,Xin Qi,Stephen M. Goodnick,F. A. Ponce,David J. Smith,R. J. Nemanich,Yuji Zhao	20
11	Design Space of Delta-Doped β-(Al_xGa_1-x)₂O₃/Ga₂O₃ High-Electron Mobility Transistors 2021 ·IEEE Transactions on Electron Devices ·Dawei Wang,Dinusha Herath Mudiyanselage,Houqiang Fu	17
12	Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices 2021 ·Journal of Electronic Materials ·(unknown),Kai Fu,Houqiang Fu,Yuji Zhao,David J. Smith	5
13	MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor 2020 ·Applied Physics Letters ·G. A. Seryogin,Fikadu Alema,(unknown),Houqiang Fu,(unknown),Adam T. Neal,Shin Mou,(unknown),A. Osinsky	116
14	Normally-off AlN/β-Ga ₂ O ₃ field-effect transistors using polarization-induced doping 2020 ·Journal of Physics D Applied Physics ·Kang‐Il Song,Haochen Zhang,Houqiang Fu,Chen Yang,Rajendra Singh,Yuji Zhao,Haiding Sun,Shibing Long	35
15	Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures 2020 ·Nano Energy ·Xuanqi Huang,Dongying Li,(unknown),Houqiang Fu,Hong Chen,Chen Yang,Jingan Zhou,Xin Qi,Tsung-Han Yang,Jossue Montes,Xuguang Deng,Kai Fu,Steven P. DenBaars,Shuji Nakamura,F. A. Ponce,Cun-Zheng Ning,Yuji Zhao	4
16	Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films 2020 ·Applied Physics Letters ·(unknown),Hanxiao Liu,Chen Yang,Kai Fu,Houqiang Fu,Yuji Zhao,F. A. Ponce	13
17	Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics 2019 ·Applied Physics Letters ·Hanxiao Liu,Houqiang Fu,Kai Fu,(unknown),(unknown),Yuji Zhao,F. A. Ponce	24
18	Dopant profiling in p-i-n GaN structures using secondary electrons 2019 ·Journal of Applied Physics ·(unknown),Houqiang Fu,Kai Fu,Hanxiao Liu,Yuji Zhao,F. A. Ponce	18
19	Variable self-powered light detection CMOS chip with real-time adaptive tracking digital output based on a novel on-chip sensor 2017 ·Optics Express ·(unknown),(unknown),Zhijian Lu,Tao Luo,Houqiang Fu,(unknown),Yuji Zhao,Jennifer Blain Christen	1
20	Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK 2017 ·Optics Express ·Zhijian Lu,Pengfei Tian,Hong Chen,Izak Baranowski,Houqiang Fu,Xuanqi Huang,Jossue Montes,(unknown),Hongyi Wang,Xiaoyan Liu,Ran Liu,Yuji Zhao	42

About Houqiang Fu

Houqiang Fu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 128 papers that have together received 2.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (92 papers), Ga2O3 and related materials (69 papers) and ZnO doping and properties (40 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (1.4k citations) and Electrical and Electronic Engineering (1.3k citations). Houqiang Fu has collaborated with scholars based in United States, China and Italy. Frequent co-authors include Yuji Zhao, Xuanqi Huang, Kai Fu, Hong Chen, Jossue Montes, Zhijian Lu, Tsung-Han Yang, Izak Baranowski, Chen Yang and Dinusha Herath Mudiyanselage. Their work appears in journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

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