Houqiang Fu

3.4k total citations
128 papers, 2.5k citations indexed

About

Houqiang Fu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Houqiang Fu has authored 128 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Condensed Matter Physics, 70 papers in Electronic, Optical and Magnetic Materials and 66 papers in Electrical and Electronic Engineering. Recurrent topics in Houqiang Fu's work include GaN-based semiconductor devices and materials (92 papers), Ga2O3 and related materials (69 papers) and ZnO doping and properties (40 papers). Houqiang Fu is often cited by papers focused on GaN-based semiconductor devices and materials (92 papers), Ga2O3 and related materials (69 papers) and ZnO doping and properties (40 papers). Houqiang Fu collaborates with scholars based in United States, China and Italy. Houqiang Fu's co-authors include Yuji Zhao, Xuanqi Huang, Kai Fu, Hong Chen, Jossue Montes, Zhijian Lu, Tsung-Han Yang, Izak Baranowski, Chen Yang and Dinusha Herath Mudiyanselage and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Houqiang Fu

124 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Houqiang Fu United States 31 1.5k 1.4k 1.3k 1.0k 440 128 2.5k
Sami Suihkonen Finland 24 1.2k 0.8× 572 0.4× 854 0.6× 660 0.6× 390 0.9× 103 1.8k
Jacob H. Leach United States 26 1.2k 0.8× 897 0.6× 952 0.7× 1.1k 1.1× 390 0.9× 112 2.1k
Kazuki Nomoto United States 34 2.3k 1.5× 2.5k 1.8× 2.0k 1.5× 1.9k 1.8× 484 1.1× 136 4.0k
Sukwon Choi United States 26 799 0.5× 703 0.5× 789 0.6× 1.3k 1.3× 142 0.3× 77 1.9k
Sameer Chhajed United States 19 1.1k 0.7× 372 0.3× 1.1k 0.8× 716 0.7× 732 1.7× 29 2.1k
Shengrui Xu China 23 1.1k 0.7× 1.3k 0.9× 859 0.6× 1.2k 1.2× 239 0.5× 150 2.1k
Amador Pérez‐Tomás Spain 29 1.0k 0.7× 1.3k 0.9× 3.7k 2.8× 1.5k 1.4× 554 1.3× 126 4.7k
Xuelin Yang China 26 1.6k 1.1× 991 0.7× 1.1k 0.9× 847 0.8× 440 1.0× 174 2.3k
Tao Tao China 18 685 0.5× 454 0.3× 569 0.4× 656 0.6× 208 0.5× 137 1.6k

Countries citing papers authored by Houqiang Fu

Since Specialization
Citations

This map shows the geographic impact of Houqiang Fu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Houqiang Fu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Houqiang Fu more than expected).

Fields of papers citing papers by Houqiang Fu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Houqiang Fu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Houqiang Fu. The network helps show where Houqiang Fu may publish in the future.

Co-authorship network of co-authors of Houqiang Fu

This figure shows the co-authorship network connecting the top 25 collaborators of Houqiang Fu. A scholar is included among the top collaborators of Houqiang Fu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Houqiang Fu. Houqiang Fu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Dawei, Dinusha Herath Mudiyanselage, Izak Baranowski, et al.. (2025). Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination. IEEE Electron Device Letters. 46(6). 960–963. 3 indexed citations
2.
Zhang, Xiang, Tanguy Terlier, Dinusha Herath Mudiyanselage, et al.. (2024). Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric. Applied Physics Letters. 125(4). 8 indexed citations
3.
Mudiyanselage, Dinusha Herath, et al.. (2024). High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates. Applied Physics Express. 17(10). 104002–104002. 10 indexed citations
4.
Yu, Guohao, Xuguang Deng, Li Zhang, et al.. (2023). Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature. Applied Physics Letters. 122(6). 1 indexed citations
5.
Santi, Carlo De, Matteo Buffolo, Xuanqi Huang, et al.. (2023). Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance. IEEE Transactions on Electron Devices. 70(7). 3624–3629.
6.
Rampazzo, Fabiana, Carlo De Santi, Matteo Buffolo, et al.. (2023). Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells. IEEE Journal of Photovoltaics. 13(6). 891–898. 1 indexed citations
7.
Zhang, Haochen, Yue Sun, Lei Yang, et al.. (2022). Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer. Journal of Physics D Applied Physics. 56(2). 25105–25105. 6 indexed citations
8.
Liu, Xingqiang, Xuming Zou, Hao Huang, et al.. (2022). The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory. IEEE Transactions on Electron Devices. 69(10). 5644–5648. 11 indexed citations
9.
Mudiyanselage, Dinusha Herath, Dawei Wang, & Houqiang Fu. (2021). Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination. IEEE Journal of the Electron Devices Society. 10. 89–97. 16 indexed citations
10.
Fu, Kai, Houqiang Fu, Xuguang Deng, et al.. (2021). The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices. Applied Physics Letters. 118(22). 20 indexed citations
11.
Wang, Dawei, Dinusha Herath Mudiyanselage, & Houqiang Fu. (2021). Design Space of Delta-Doped β-(Al x Ga1-x )2O3/Ga2O3 High-Electron Mobility Transistors. IEEE Transactions on Electron Devices. 69(1). 69–74. 17 indexed citations
12.
Fu, Kai, et al.. (2021). Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices. Journal of Electronic Materials. 50(5). 2637–2642. 5 indexed citations
13.
Seryogin, G. A., Fikadu Alema, Houqiang Fu, et al.. (2020). MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor. Applied Physics Letters. 117(26). 116 indexed citations
14.
Song, Kang‐Il, Haochen Zhang, Houqiang Fu, et al.. (2020). Normally-off AlN/β-Ga 2 O 3 field-effect transistors using polarization-induced doping. Journal of Physics D Applied Physics. 53(34). 345107–345107. 35 indexed citations
15.
Huang, Xuanqi, Dongying Li, Houqiang Fu, et al.. (2020). Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures. Nano Energy. 76. 105013–105013. 4 indexed citations
16.
Liu, Hanxiao, Chen Yang, Kai Fu, et al.. (2020). Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films. Applied Physics Letters. 117(10). 13 indexed citations
17.
Liu, Hanxiao, et al.. (2019). Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics. Applied Physics Letters. 114(8). 24 indexed citations
18.
Fu, Houqiang, et al.. (2019). Dopant profiling in p-i-n GaN structures using secondary electrons. Journal of Applied Physics. 126(1). 18 indexed citations
19.
Lu, Zhijian, et al.. (2017). Variable self-powered light detection CMOS chip with real-time adaptive tracking digital output based on a novel on-chip sensor. Optics Express. 25(20). 24138–24138. 1 indexed citations
20.
Lu, Zhijian, Pengfei Tian, Hong Chen, et al.. (2017). Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK. Optics Express. 25(15). 17971–17971. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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