Naoki Kaneda

1.1k total citations
27 papers, 900 citations indexed

About

Naoki Kaneda is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Naoki Kaneda has authored 27 papers receiving a total of 900 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 20 papers in Electrical and Electronic Engineering and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Naoki Kaneda's work include GaN-based semiconductor devices and materials (23 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Semiconductor materials and devices (11 papers). Naoki Kaneda is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Semiconductor materials and devices (11 papers). Naoki Kaneda collaborates with scholars based in Japan, United States and United Kingdom. Naoki Kaneda's co-authors include Tomoyoshi Mishima, Tohru Nakamura, Kazuki Nomoto, Yoshitomo Hatakeyama, Fumimasa Horikiri, Takehiro Yoshida, Hiroshi Ohta, Yoshinobu Narita, Akihisa Terano and Mingda Zhu and has published in prestigious journals such as IEEE Transactions on Electron Devices, Thin Solid Films and Japanese Journal of Applied Physics.

In The Last Decade

Naoki Kaneda

25 papers receiving 857 citations

Peers

Naoki Kaneda
K. Čičo Slovakia
An-Jye Tzou Taiwan
Morteza Monavarian United States
R. Therrien United States
Michael L. Schuette United States
Mike Iza United States
Mohsen Nami United States
N. Ronchi Belgium
X. Z. Dang United States
K. Čičo Slovakia
Naoki Kaneda
Citations per year, relative to Naoki Kaneda Naoki Kaneda (= 1×) peers K. Čičo

Countries citing papers authored by Naoki Kaneda

Since Specialization
Citations

This map shows the geographic impact of Naoki Kaneda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Naoki Kaneda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Naoki Kaneda more than expected).

Fields of papers citing papers by Naoki Kaneda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Naoki Kaneda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Naoki Kaneda. The network helps show where Naoki Kaneda may publish in the future.

Co-authorship network of co-authors of Naoki Kaneda

This figure shows the co-authorship network connecting the top 25 collaborators of Naoki Kaneda. A scholar is included among the top collaborators of Naoki Kaneda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Naoki Kaneda. Naoki Kaneda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Hashimoto, Yoshiki, et al.. (2022). A Study on 23.8-43 GHz CMOS Low-Power Ultra-Wideband Injection-Locked Frequency Multiplier with Transformer Input. 2022 Asia-Pacific Microwave Conference (APMC). 372–374.
3.
Mochizuki, Kazuhiro, Naoki Kaneda, Kentaro Hayashi, et al.. (2021). Analysis of step-velocity-dependent concentration of magnesium in GaN based on Burton−Cabrera−Frank theory and step-edge segregation model. Japanese Journal of Applied Physics. 60(12). 128003–128003. 2 indexed citations
4.
Nomoto, Kazuki, Bo Song, Zongyang Hu, et al.. (2015). 1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability. IEEE Electron Device Letters. 37(2). 161–164. 160 indexed citations
5.
Tanaka, Takeshi, et al.. (2015). Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates. Japanese Journal of Applied Physics. 54(4). 41002–41002. 49 indexed citations
6.
Nomoto, Kazuki, Zhenqi Hu, Bo Song, et al.. (2015). GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2. 9.7.1–9.7.4. 52 indexed citations
7.
Ohta, Hiroshi, Naoki Kaneda, Fumimasa Horikiri, et al.. (2015). Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV. IEEE Electron Device Letters. 36(11). 1180–1182. 193 indexed citations
8.
Mochizuki, Kazuhiro, Tomoyoshi Mishima, Yoshitomo Hatakeyama, et al.. (2014). A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaN. Materials science forum. 778-780. 1189–1192. 1 indexed citations
9.
10.
Tanaka, Takeshi, et al.. (2013). Impact of crystal-quality improvement of epitaxial wafers on RF and power switching devices by utilizing VAS-method grown GaN substrates with low-density and uniformly distributed dislocations. 6 indexed citations
11.
Shiojima, Kenji, et al.. (2013). High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodes. Thin Solid Films. 557. 268–271. 3 indexed citations
12.
Shiojima, Kenji, et al.. (2013). Electrical Characteristics of Surface-Stoichiometry-Controlled p-GaN Schottky Contacts. Japanese Journal of Applied Physics. 52(1S). 01AF05–01AF05. 5 indexed citations
13.
Mochizuki, Kazuhiro, Tomoyoshi Mishima, Yoshitomo Hatakeyama, et al.. (2013). Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p–n Junction Epitaxial Layers. Japanese Journal of Applied Physics. 52(8S). 08JN22–08JN22. 15 indexed citations
14.
Shiojima, Kenji, et al.. (2013). Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts. Japanese Journal of Applied Physics. 52(8S). 08JJ08–08JJ08. 11 indexed citations
15.
Nomoto, Kazuki, et al.. (2012). Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage. Materials science forum. 717-720. 1299–1302. 2 indexed citations
16.
Mochizuki, Kazuhiro, et al.. (2011). Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates. IEEE Transactions on Electron Devices. 58(7). 1979–1985. 28 indexed citations
17.
Mochizuki, Kazuhiro, et al.. (2011). Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates. Applied Physics Express. 4(2). 24104–24104. 9 indexed citations
18.
Mochizuki, Kazuhiro, Kazuki Nomoto, Yoshitomo Hatakeyama, et al.. (2011). Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance. 26.3.1–26.3.4. 12 indexed citations
19.
Kaneda, Naoki, Theeradetch Detchprohm, Kazumasa Hiramatsu, & Nobuhiko Sawaki Nobuhiko Sawaki. (1996). Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane. Japanese Journal of Applied Physics. 35(4B). L468–L468. 8 indexed citations
20.
Nagatsu, Ikuko, Kenneth M. Yamada, Nobuyuki Karasawa, et al.. (1991). Expression in brain sensory neurons of the transgene in transgenic mice carrying human tyrosine hydroxylase gene. Neuroscience Letters. 127(1). 91–95. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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