Vladimir Protasenko

5.0k total citations · 1 hit paper
86 papers, 4.0k citations indexed

About

Vladimir Protasenko is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Vladimir Protasenko has authored 86 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Condensed Matter Physics, 39 papers in Materials Chemistry and 37 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Vladimir Protasenko's work include GaN-based semiconductor devices and materials (45 papers), Ga2O3 and related materials (36 papers) and ZnO doping and properties (19 papers). Vladimir Protasenko is often cited by papers focused on GaN-based semiconductor devices and materials (45 papers), Ga2O3 and related materials (36 papers) and ZnO doping and properties (19 papers). Vladimir Protasenko collaborates with scholars based in United States, Germany and Japan. Vladimir Protasenko's co-authors include Huili Grace Xing, Debdeep Jena, Debdeep Jena, Masaru Kuno, John Simon, Chuanxin Lian, Rusen Yan, Daniel Bacinello, Jai Verma and Mingda Zhu and has published in prestigious journals such as Science, Journal of the American Chemical Society and Advanced Materials.

In The Last Decade

Vladimir Protasenko

84 papers receiving 3.9k citations

Hit Papers

Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxia... 2009 2026 2014 2020 2009 200 400 600

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Vladimir Protasenko United States 33 2.3k 1.9k 1.7k 1.5k 1.2k 86 4.0k
S. J. Chua Singapore 33 2.1k 0.9× 2.0k 1.1× 1.8k 1.1× 1.3k 0.9× 561 0.5× 197 3.8k
H. Shen United States 30 3.5k 1.5× 3.7k 2.0× 1.1k 0.7× 1.9k 1.3× 623 0.5× 146 5.8k
Michael Wraback United States 31 2.1k 0.9× 2.1k 1.1× 2.3k 1.4× 2.1k 1.4× 971 0.8× 168 4.5k
N. B. Smirnov Russia 37 2.6k 1.1× 2.2k 1.2× 2.9k 1.7× 2.9k 1.9× 539 0.4× 243 4.9k
Byeong‐Yun Oh South Korea 30 1.7k 0.7× 1.4k 0.8× 1.4k 0.8× 1.7k 1.1× 527 0.4× 110 3.5k
Stephen K. O’Leary Canada 28 1.7k 0.8× 1.9k 1.0× 1.3k 0.8× 775 0.5× 318 0.3× 134 3.1k
W. C. Mitchel United States 38 1.6k 0.7× 3.1k 1.6× 1.3k 0.8× 977 0.6× 520 0.4× 256 4.7k
Hiroshi Harima Japan 24 1.6k 0.7× 1.3k 0.7× 1.6k 0.9× 993 0.7× 574 0.5× 125 3.1k
J. Zúñiga‐Pérez France 37 2.4k 1.0× 1.5k 0.8× 789 0.5× 1.4k 0.9× 789 0.7× 146 3.8k
H. Hardtdegen Germany 31 1.2k 0.5× 1.5k 0.8× 1.3k 0.8× 581 0.4× 610 0.5× 217 3.1k

Countries citing papers authored by Vladimir Protasenko

Since Specialization
Citations

This map shows the geographic impact of Vladimir Protasenko's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Vladimir Protasenko with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Vladimir Protasenko more than expected).

Fields of papers citing papers by Vladimir Protasenko

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Vladimir Protasenko. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Vladimir Protasenko. The network helps show where Vladimir Protasenko may publish in the future.

Co-authorship network of co-authors of Vladimir Protasenko

This figure shows the co-authorship network connecting the top 25 collaborators of Vladimir Protasenko. A scholar is included among the top collaborators of Vladimir Protasenko based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Vladimir Protasenko. Vladimir Protasenko is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bhattacharya, Debaditya, et al.. (2026). Dielectric assisted liftoff enabled simultaneous low n- and p- differential contact resistivities in ultrawide bandgap AlGaN pn diodes on bulk AlN. Japanese Journal of Applied Physics. 65(3). 36503–36503.
2.
Bazarov, Ivan, Alice Galdi, Melissa A. Hines, et al.. (2025). A cesium-iodide surface treatment for enhancement of negative electron affinity photocathode chemical robustness. Journal of Applied Physics. 137(22). 1 indexed citations
3.
Encomendero, Jimy, et al.. (2024). Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates. Applied Physics Letters. 124(15). 18 indexed citations
4.
McCandless, Jonathan P., Vladimir Protasenko, Darrell G. Schlom, et al.. (2024). Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure. Applied Physics Letters. 124(11). 12 indexed citations
5.
6.
Zhang, Zexuan, et al.. (2023). Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates. Applied Physics Letters. 122(21). 9 indexed citations
7.
Chen, Hanyu, Carmen I. Moraru, & Vladimir Protasenko. (2023). Maximizing the disinfection effectiveness of 254 nm UV-C light with a special design unit: simulation and experimental approaches. SHILAP Revista de lepidopterología. 3. 2 indexed citations
8.
Zhang, Zexuan, Yusuke Hayashi, Tetsuya Tohei, et al.. (2022). Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning. Science Advances. 8(36). eabo6408–eabo6408. 22 indexed citations
9.
McCandless, Jonathan P., Vladimir Protasenko, Adam T. Neal, et al.. (2022). Controlled Si doping of β -Ga2O3 by molecular beam epitaxy. Applied Physics Letters. 121(7). 32 indexed citations
10.
Nomoto, Kazuki, Wenshen Li, Bo Song, et al.. (2022). Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV. Applied Physics Letters. 120(12). 4 indexed citations
11.
McCandless, Jonathan P., Celesta S. Chang, Kazuki Nomoto, et al.. (2021). Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire. Applied Physics Letters. 119(6). 54 indexed citations
12.
Chang, Celesta S., Nicholas Tanen, Vladimir Protasenko, et al.. (2021). γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films. APL Materials. 9(5). 33 indexed citations
13.
Zhang, Zexuan, Jimy Encomendero, Reet Chaudhuri, et al.. (2021). Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates. Applied Physics Letters. 119(16). 25 indexed citations
14.
Jinno, Riena, Celesta S. Chang, Takeyoshi Onuma, et al.. (2021). Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa) 2 O 3 on m-plane sapphire. Science Advances. 7(2). 107 indexed citations
15.
Tanen, Nicholas, Vladimir Protasenko, Jonathan P. McCandless, et al.. (2020). Quantum Transport in Epitaxial Ultra Wide Bandgap Aluminum Gallium Oxide Tunnel Heterostructures. Bulletin of the American Physical Society.
16.
Cheng, Yifan, et al.. (2020). Inactivation of Listeria and E. coli by Deep-UV LED: effect of substrate conditions on inactivation kinetics. Scientific Reports. 10(1). 3411–3411. 58 indexed citations
17.
Wei, Tongbo, S. M. Islam, U. Jahn, et al.. (2019). GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy. Optics Letters. 45(1). 121–121. 26 indexed citations
18.
Bjaalie, Lars, Amit Verma, Burak Himmetoḡlu, et al.. (2015). Determination of the Mott-Hubbard gap in GdTiO3. Library, Museums and Press - UDSpace (University of Delaware). 2015. 1 indexed citations
19.
Sensale‐Rodriguez, Berardi, Subrina Rafique, Rusen Yan, et al.. (2013). Terahertz imaging employing graphene modulator arrays. Optics Express. 21(2). 2324–2324. 100 indexed citations
20.
Simon, John, Vladimir Protasenko, Chuanxin Lian, Huili Grace Xing, & Debdeep Jena. (2009). Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures. Science. 327(5961). 60–64. 669 indexed citations breakdown →

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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